BFG540/X,215
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NXP USA Inc. BFG540/X,215

Manufacturer No:
BFG540/X,215
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 15V 9GHZ SOT143B
Delivery:
Payment:
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Product Introduction

Overview

The BFG540/X,215 is an NPN silicon planar epitaxial transistor produced by NXP USA Inc. This transistor is designed for wideband applications in the GHz range, making it suitable for various high-frequency uses. It is packaged in a plastic SOT143B surface-mounted package, which is compact and suitable for modern electronic designs.

Key Specifications

ParameterConditionsMin.Typ.Max.Unit
VCBO (Collector-Base Voltage)Open Emitter--20V
VCES (Collector-Emitter Voltage)RBE = 0--15V
VEBO (Emitter-Base Voltage)Open Collector--2.5V
IC (DC Collector Current)---120mA
Ptot (Total Power Dissipation)Ts ≤ 60 °C--400mW
Tstg (Storage Temperature)--65-150°C
Tj (Junction Temperature)---150°C
Rth j-s (Thermal Resistance)Ts ≤ 60 °C-290-K/W

Key Features

  • High power gain
  • Low noise figure
  • High transition frequency
  • Gold metallization for excellent reliability
  • Compact SOT143B surface-mounted package

Applications

  • Analog and digital cellular telephones
  • Cordless telephones (CT1, CT2, DECT, etc.)
  • Radar detectors
  • Satellite TV tuners (SATV)
  • MATV/CATV amplifiers and repeater amplifiers in fibre-optical systems

Q & A

  1. What is the maximum collector-emitter voltage of the BFG540/X,215? The maximum collector-emitter voltage is 15 V.
  2. What is the typical thermal resistance from junction to soldering point? The typical thermal resistance is 290 K/W.
  3. What are the storage temperature limits for the BFG540/X,215? The storage temperature limits are from -65 °C to 150 °C.
  4. What is the maximum DC collector current? The maximum DC collector current is 120 mA.
  5. What are the common applications of the BFG540/X,215? Common applications include analog and digital cellular telephones, cordless telephones, radar detectors, and satellite TV tuners.
  6. What package type is the BFG540/X,215 available in? The BFG540/X,215 is available in a plastic SOT143B surface-mounted package.
  7. What is the maximum total power dissipation? The maximum total power dissipation is 400 mW.
  8. Does the BFG540/X,215 have gold metallization? Yes, it has gold metallization for excellent reliability.
  9. What is the junction temperature limit? The junction temperature limit is 150 °C.
  10. Is the BFG540/X,215 suitable for life support applications? No, the BFG540/X,215 is not designed for use in life support appliances, devices, or systems.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):15V
Frequency - Transition:9GHz
Noise Figure (dB Typ @ f):1.3dB ~ 2.4dB @ 900MHz
Gain:- 
Power - Max:400mW
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 40mA, 8V
Current - Collector (Ic) (Max):120mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-253-4, TO-253AA
Supplier Device Package:SOT-143B
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Same Series
BFG540,215
BFG540,215
RF TRANS NPN 15V 9GHZ SOT143B
BFG540/XR,215
BFG540/XR,215
RF TRANS NPN 15V 9GHZ SOT143R

Similar Products

Part Number BFG540/X,215 BFG590/X,215 BFG540/XR,215 BFG520/X,215
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete Obsolete
Transistor Type NPN NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 15V 15V 15V 15V
Frequency - Transition 9GHz 5GHz 9GHz 9GHz
Noise Figure (dB Typ @ f) 1.3dB ~ 2.4dB @ 900MHz - 1.3dB ~ 2.4dB @ 900MHz 1.1dB ~ 2.1dB @ 900MHz
Gain - - - -
Power - Max 400mW 400mW 400mW 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 40mA, 8V 60 @ 70mA, 8V 100 @ 40mA, 8V 60 @ 20mA, 6V
Current - Collector (Ic) (Max) 120mA 200mA 120mA 70mA
Operating Temperature 150°C (TJ) 175°C (TJ) 150°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-253-4, TO-253AA TO-253-4, TO-253AA SOT-143R TO-253-4, TO-253AA
Supplier Device Package SOT-143B SOT-143B SOT-143R SOT-143B

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