Overview
The BLF6G20-180PN,112 is a high-power LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor designed by Ampleon USA Inc. This component is specifically tailored for RF power amplifier applications in the frequency range of 1800 MHz to 2000 MHz, making it suitable for base station and multicarrier applications.
Key Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Ampleon USA Inc. |
| Voltage - Test | 32 V |
| Voltage - Rated | 65 V |
| Technology | LDMOS |
| Supplier Device Package | SOT539A |
| Power - Output | 50 W (at 3 dB gain compression) |
| Package / Case | SOT-539A |
| Mounting Type | Chassis Mount |
| Gain | 18 dB |
| Frequency | 1.8 GHz ~ 1.88 GHz |
| Current - Test | 1.6 A |
| Configuration | Dual, Common Source |
| Drain Efficiency | 26% to 29.5% |
| Adjacent Channel Power Ratio (ACPR) | -35 dBc to -33 dBc |
Key Features
- Easy power control
- Integrated ESD protection
- Excellent ruggedness and reliability
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (1800 MHz to 2000 MHz)
- Internally matched for ease of use
- Qualified up to a supply voltage of 32 V
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
Applications
- RF power amplifiers for W-CDMA base stations
- Multicarrier applications in the 1800 MHz to 2000 MHz frequency range
Q & A
- What is the primary application of the BLF6G20-180PN,112 transistor?
The primary application is for RF power amplifiers in W-CDMA base stations and multicarrier applications within the 1800 MHz to 2000 MHz frequency range.
- What is the output power of the BLF6G20-180PN,112 at 3 dB gain compression?
The output power is 50 W at 3 dB gain compression.
- What is the gain of the BLF6G20-180PN,112 transistor?
The gain is 18 dB.
- What is the frequency range of the BLF6G20-180PN,112 transistor?
The frequency range is from 1.8 GHz to 1.88 GHz.
- What is the current rating during the test for the BLF6G20-180PN,112 transistor?
The current rating during the test is 1.6 A.
- What type of configuration does the BLF6G20-180PN,112 transistor have?
The configuration is dual, common source.
- Is the BLF6G20-180PN,112 transistor RoHS compliant?
Yes, it is compliant to Directive 2002/95/EC regarding the Restriction of Hazardous Substances.
- What is the drain efficiency of the BLF6G20-180PN,112 transistor?
The drain efficiency ranges from 26% to 29.5%.
- What is the adjacent channel power ratio (ACPR) of the BLF6G20-180PN,112 transistor?
The ACPR ranges from -35 dBc to -33 dBc.
- Is the BLF6G20-180PN,112 transistor still in production?
No, this product has been discontinued.
