Overview
The BFU630F,115 is an NPN silicon microwave transistor designed and manufactured by NXP USA Inc. This transistor is optimized for high-speed, low-noise applications, making it suitable for various RF and microwave circuits. It operates at a collector-emitter voltage of 5.5V and is known for its high frequency transition and low noise figure, making it a reliable choice for demanding electronic systems.
Key Specifications
| Category | Description |
|---|---|
| Manufacturer | NXP USA Inc. |
| Transistor Type | NPN |
| Package / Case | SOT-343F, 4-DFP |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Frequency - Transition | 21GHz |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 30mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 5mA, 2V |
| Voltage - Collector Emitter Breakdown (Max) | 5.5V |
| Noise Figure (dB Typ @ f) | 0.75dB ~ 1.3dB @ 1.5GHz ~ 5.8GHz |
| Gain | 13dB ~ 22.5dB |
Key Features
- High frequency transition of up to 21GHz, making it suitable for high-speed applications.
- Low noise figure ranging from 0.75dB to 1.3dB at frequencies between 1.5GHz and 5.8GHz.
- High DC current gain (hFE) of at least 90 at 5mA and 2V collector-emitter voltage.
- Maximum collector-emitter voltage of 5.5V and maximum collector current of 30mA.
- Surface mount package (SOT-343F, 4-DFP) for easy integration into modern electronic designs.
- Operating temperature up to 150°C, ensuring reliability in various environmental conditions.
Applications
The BFU630F,115 transistor is ideal for a variety of high-speed and low-noise applications, including:
- RF amplifiers and receivers.
- Microwave circuits and systems.
- Wireless communication devices.
- High-frequency signal processing and transmission systems.
- Medical and industrial imaging equipment.
Q & A
- What is the maximum collector-emitter voltage of the BFU630F,115 transistor?
The maximum collector-emitter voltage is 5.5V. - What is the frequency transition of the BFU630F,115 transistor?
The frequency transition is up to 21GHz. - What is the typical noise figure of the BFU630F,115 transistor?
The noise figure is typically between 0.75dB and 1.3dB at frequencies between 1.5GHz and 5.8GHz. - What is the maximum collector current of the BFU630F,115 transistor?
The maximum collector current is 30mA. - What is the DC current gain (hFE) of the BFU630F,115 transistor?
The DC current gain (hFE) is at least 90 at 5mA and 2V collector-emitter voltage. - What is the operating temperature range of the BFU630F,115 transistor?
The operating temperature range is up to 150°C (TJ). - What package types are available for the BFU630F,115 transistor?
The transistor is available in SOT-343F and 4-DFP packages. - Is the BFU630F,115 transistor suitable for surface mount applications?
Yes, it is designed for surface mount applications. - What are some common applications of the BFU630F,115 transistor?
Common applications include RF amplifiers, microwave circuits, wireless communication devices, and high-frequency signal processing systems. - Where can I find detailed specifications and datasheets for the BFU630F,115 transistor?
Detailed specifications and datasheets can be found on the NXP website, Digi-Key, and other authorized distributors.
