Overview
The BFU610F,115 is a high-performance RF bipolar transistor manufactured by NXP USA Inc. This transistor is designed for use in radio frequency (RF) applications, offering excellent gain and low noise figures. It is particularly suited for amplification and switching roles in various RF circuits.
Key Specifications
Category | Value |
---|---|
Manufacturer | NXP USA Inc. |
Package / Case | SOT-343F |
Transistor Type | NPN |
Gain | 12dB ~ 21dB |
Power - Max | 225mW |
Mounting Type | Surface Mount |
Operating Temperature | 150°C (TJ) |
Frequency - Transition | 21GHz |
Noise Figure (dB Typ @ f) | 0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz |
Current - Collector (Ic) (Max) | 60mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 10mA, 2V |
Voltage - Collector Emitter Breakdown (Max) | 5.5V |
Key Features
- High Gain: The BFU610F,115 offers a high gain of 12dB to 21dB, making it suitable for amplification in RF circuits.
- Low Noise Figure: With a noise figure of 0.6dB to 1.2dB at frequencies from 1.5GHz to 5.8GHz, this transistor is ideal for low-noise applications.
- High Transition Frequency: It has a transition frequency of 21GHz, ensuring high performance in high-frequency applications.
- Surface Mount Package: The SOT-343F package is convenient for surface mount assembly, enhancing manufacturing efficiency.
- High Operating Temperature: The transistor can operate up to 150°C, making it robust for various environmental conditions.
Applications
- RF Amplifiers: Suitable for use in RF amplifiers due to its high gain and low noise figure.
- Wireless Communication Systems: Ideal for applications in wireless communication systems, including cellular networks and satellite communications.
- Microwave Circuits: Used in microwave circuits where high-frequency performance is critical.
- Switching Circuits: Can be used in switching applications requiring high speed and low noise.
Q & A
- What is the package type of the BFU610F,115 transistor?
The BFU610F,115 transistor comes in a SOT-343F package.
- What is the maximum power handling of the BFU610F,115?
The maximum power handling is 225mW.
- What is the operating temperature range of the BFU610F,115?
The operating temperature range is up to 150°C (TJ).
- What is the transition frequency of the BFU610F,115?
The transition frequency is 21GHz.
- What are the typical noise figures for the BFU610F,115?
The noise figures are 0.6dB to 1.2dB at frequencies from 1.5GHz to 5.8GHz.
- What is the maximum collector current of the BFU610F,115?
The maximum collector current is 60mA.
- What is the minimum DC current gain (hFE) of the BFU610F,115?
The minimum DC current gain (hFE) is 90 at 10mA and 2V.
- What is the maximum collector-emitter breakdown voltage of the BFU610F,115?
The maximum collector-emitter breakdown voltage is 5.5V.
- In what types of applications is the BFU610F,115 commonly used?
The BFU610F,115 is commonly used in RF amplifiers, wireless communication systems, microwave circuits, and switching circuits.
- Is the BFU610F,115 RoHS compliant?
Yes, the BFU610F,115 is RoHS compliant.