BFU610F,115
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NXP USA Inc. BFU610F,115

Manufacturer No:
BFU610F,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 5.5V 15GHZ 4DFP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFU610F,115 is a high-performance RF bipolar transistor manufactured by NXP USA Inc. This transistor is designed for use in radio frequency (RF) applications, offering excellent gain and low noise figures. It is particularly suited for amplification and switching roles in various RF circuits.

Key Specifications

Category Value
Manufacturer NXP USA Inc.
Package / Case SOT-343F
Transistor Type NPN
Gain 12dB ~ 21dB
Power - Max 225mW
Mounting Type Surface Mount
Operating Temperature 150°C (TJ)
Frequency - Transition 21GHz
Noise Figure (dB Typ @ f) 0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz
Current - Collector (Ic) (Max) 60mA
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 10mA, 2V
Voltage - Collector Emitter Breakdown (Max) 5.5V

Key Features

  • High Gain: The BFU610F,115 offers a high gain of 12dB to 21dB, making it suitable for amplification in RF circuits.
  • Low Noise Figure: With a noise figure of 0.6dB to 1.2dB at frequencies from 1.5GHz to 5.8GHz, this transistor is ideal for low-noise applications.
  • High Transition Frequency: It has a transition frequency of 21GHz, ensuring high performance in high-frequency applications.
  • Surface Mount Package: The SOT-343F package is convenient for surface mount assembly, enhancing manufacturing efficiency.
  • High Operating Temperature: The transistor can operate up to 150°C, making it robust for various environmental conditions.

Applications

  • RF Amplifiers: Suitable for use in RF amplifiers due to its high gain and low noise figure.
  • Wireless Communication Systems: Ideal for applications in wireless communication systems, including cellular networks and satellite communications.
  • Microwave Circuits: Used in microwave circuits where high-frequency performance is critical.
  • Switching Circuits: Can be used in switching applications requiring high speed and low noise.

Q & A

  1. What is the package type of the BFU610F,115 transistor?

    The BFU610F,115 transistor comes in a SOT-343F package.

  2. What is the maximum power handling of the BFU610F,115?

    The maximum power handling is 225mW.

  3. What is the operating temperature range of the BFU610F,115?

    The operating temperature range is up to 150°C (TJ).

  4. What is the transition frequency of the BFU610F,115?

    The transition frequency is 21GHz.

  5. What are the typical noise figures for the BFU610F,115?

    The noise figures are 0.6dB to 1.2dB at frequencies from 1.5GHz to 5.8GHz.

  6. What is the maximum collector current of the BFU610F,115?

    The maximum collector current is 60mA.

  7. What is the minimum DC current gain (hFE) of the BFU610F,115?

    The minimum DC current gain (hFE) is 90 at 10mA and 2V.

  8. What is the maximum collector-emitter breakdown voltage of the BFU610F,115?

    The maximum collector-emitter breakdown voltage is 5.5V.

  9. In what types of applications is the BFU610F,115 commonly used?

    The BFU610F,115 is commonly used in RF amplifiers, wireless communication systems, microwave circuits, and switching circuits.

  10. Is the BFU610F,115 RoHS compliant?

    Yes, the BFU610F,115 is RoHS compliant.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):5.5V
Frequency - Transition:15GHz
Noise Figure (dB Typ @ f):0.9dB ~ 1.7dB @ 1.5GHz ~ 5.8GHz
Gain:13.5dB ~ 23.5dB
Power - Max:136mW
DC Current Gain (hFE) (Min) @ Ic, Vce:90 @ 1mA, 2V
Current - Collector (Ic) (Max):10mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-343F
Supplier Device Package:4-DFP
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Similar Products

Part Number BFU610F,115 BFU690F,115 BFU660F,115 BFU630F,115 BFU710F,115
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Active Active Active
Transistor Type NPN NPN NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 5.5V 5.5V 5.5V 5.5V 2.8V
Frequency - Transition 15GHz 18GHz 21GHz 21GHz 43GHz
Noise Figure (dB Typ @ f) 0.9dB ~ 1.7dB @ 1.5GHz ~ 5.8GHz 0.6dB ~ 0.7dG @ 1.5GHz ~ 2.4GHz 0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz 0.75dB ~ 1.3dB @ 1.5GHz ~ 5.8GHz 0.85dB ~ 1.45dB @ 5.8GHz ~ 12GHz
Gain 13.5dB ~ 23.5dB 15.5dB ~ 18.5dB 12dB ~ 21dB 13dB ~ 22.5dB -
Power - Max 136mW 230mW 225mW 200mW 136mW
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 1mA, 2V 90 @ 20mA, 2V 90 @ 10mA, 2V 90 @ 5mA, 2V 200 @ 1mA, 2V
Current - Collector (Ic) (Max) 10mA 100mA 60mA 30mA 10mA
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOT-343F SOT-343F SOT-343F SOT-343F SOT-343F
Supplier Device Package 4-DFP 4-DFP 4-DFP 4-DFP 4-DFP

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