Overview
The BFG21W,115 is an NPN double polysilicon bipolar power transistor manufactured by NXP USA Inc. This transistor is designed for low voltage, medium power applications and is encapsulated in a plastic, 4-pin dual-emitter package. It is particularly suited for high-frequency operations due to its high transition frequency and low noise characteristics.
Key Specifications
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (Vceo) | 15 V |
| Continuous Collector Current (Ic) | 200 mA |
| DC Collector Current | 500 mA |
| DC Current Gain (Min) | 40 |
| Transition Frequency (fT) | 18 GHz |
| Package Type | Plastic, 4-pin dual-emitter |
Key Features
- NPN double polysilicon bipolar power transistor
- High transition frequency of 18 GHz, suitable for high-frequency applications
- Low noise characteristics
- Collector-Emitter Voltage of 15 V
- Continuous Collector Current of 200 mA and DC Collector Current of 500 mA
- DC Current Gain minimum of 40
- Encapsulated in a plastic, 4-pin dual-emitter package
Applications
- RF amplifiers and oscillators
- High-frequency switching circuits
- Low noise amplifiers
- General-purpose amplification in medium power applications
- Wireless communication systems
Q & A
- What is the BFG21W,115 transistor used for?
The BFG21W,115 is used for low voltage, medium power applications, particularly in high-frequency operations such as RF amplifiers, oscillators, and low noise amplifiers.
- What is the transition frequency of the BFG21W,115 transistor?
The transition frequency (fT) of the BFG21W,115 transistor is 18 GHz.
- What is the maximum collector-emitter voltage of the BFG21W,115?
The maximum collector-emitter voltage (Vceo) is 15 V.
- What is the continuous collector current of the BFG21W,115?
The continuous collector current (Ic) is 200 mA.
- What is the DC current gain of the BFG21W,115?
The DC current gain (hFE) minimum is 40.
- In what type of package is the BFG21W,115 encapsulated?
The BFG21W,115 is encapsulated in a plastic, 4-pin dual-emitter package.
- Is the BFG21W,115 suitable for high-frequency applications?
Yes, the BFG21W,115 is highly suitable for high-frequency applications due to its high transition frequency and low noise characteristics.
- What are some common applications of the BFG21W,115?
Common applications include RF amplifiers, oscillators, low noise amplifiers, and general-purpose amplification in medium power applications.
- Who is the manufacturer of the BFG21W,115 transistor?
The BFG21W,115 transistor is manufactured by NXP USA Inc.
- Where can I find detailed specifications for the BFG21W,115?
Detailed specifications can be found in the datasheet available on official NXP websites, Digi-Key, Mouser Electronics, and other electronic component distributors.
