BFG21W,115
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NXP USA Inc. BFG21W,115

Manufacturer No:
BFG21W,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 4.5V 18GHZ CMPAK-4
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The BFG21W,115 is an NPN double polysilicon bipolar power transistor manufactured by NXP USA Inc. This transistor is designed for low voltage, medium power applications and is encapsulated in a plastic, 4-pin dual-emitter package. It is particularly suited for high-frequency operations due to its high transition frequency and low noise characteristics.

Key Specifications

Parameter Value
Collector-Emitter Voltage (Vceo) 15 V
Continuous Collector Current (Ic) 200 mA
DC Collector Current 500 mA
DC Current Gain (Min) 40
Transition Frequency (fT) 18 GHz
Package Type Plastic, 4-pin dual-emitter

Key Features

  • NPN double polysilicon bipolar power transistor
  • High transition frequency of 18 GHz, suitable for high-frequency applications
  • Low noise characteristics
  • Collector-Emitter Voltage of 15 V
  • Continuous Collector Current of 200 mA and DC Collector Current of 500 mA
  • DC Current Gain minimum of 40
  • Encapsulated in a plastic, 4-pin dual-emitter package

Applications

  • RF amplifiers and oscillators
  • High-frequency switching circuits
  • Low noise amplifiers
  • General-purpose amplification in medium power applications
  • Wireless communication systems

Q & A

  1. What is the BFG21W,115 transistor used for?

    The BFG21W,115 is used for low voltage, medium power applications, particularly in high-frequency operations such as RF amplifiers, oscillators, and low noise amplifiers.

  2. What is the transition frequency of the BFG21W,115 transistor?

    The transition frequency (fT) of the BFG21W,115 transistor is 18 GHz.

  3. What is the maximum collector-emitter voltage of the BFG21W,115?

    The maximum collector-emitter voltage (Vceo) is 15 V.

  4. What is the continuous collector current of the BFG21W,115?

    The continuous collector current (Ic) is 200 mA.

  5. What is the DC current gain of the BFG21W,115?

    The DC current gain (hFE) minimum is 40.

  6. In what type of package is the BFG21W,115 encapsulated?

    The BFG21W,115 is encapsulated in a plastic, 4-pin dual-emitter package.

  7. Is the BFG21W,115 suitable for high-frequency applications?

    Yes, the BFG21W,115 is highly suitable for high-frequency applications due to its high transition frequency and low noise characteristics.

  8. What are some common applications of the BFG21W,115?

    Common applications include RF amplifiers, oscillators, low noise amplifiers, and general-purpose amplification in medium power applications.

  9. Who is the manufacturer of the BFG21W,115 transistor?

    The BFG21W,115 transistor is manufactured by NXP USA Inc.

  10. Where can I find detailed specifications for the BFG21W,115?

    Detailed specifications can be found in the datasheet available on official NXP websites, Digi-Key, Mouser Electronics, and other electronic component distributors.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):4.5V
Frequency - Transition:18GHz
Noise Figure (dB Typ @ f):- 
Gain:- 
Power - Max:600mW
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 200mA, 2V
Current - Collector (Ic) (Max):500mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-82A, SOT-343
Supplier Device Package:CMPAK-4
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