Overview
The BFG505/X,215 is a high-performance NPN silicon planar epitaxial transistor designed for RF applications, manufactured by NXP USA Inc. This transistor is housed in a 4-pin dual-emitter SOT143B plastic package, making it suitable for surface mount technology. It is characterized by its high frequency transition of up to 9 GHz and a maximum collector-emitter breakdown voltage of 15V, making it an ideal component for various RF and microwave applications.
Key Specifications
| Parameter | Value |
|---|---|
| Manufacturer Part Number | BFG505/X,215 |
| Manufacturer | NXP Semiconductors / Freescale |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| Frequency - Transition | 9GHz |
| Noise Figure (dB Typ @ f) | 1.2dB ~ 1.9dB @ 900MHz ~ 2GHz |
| Power - Max | 150mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 6V |
| Current - Collector (Ic) (Max) | 18mA |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-143B, TO-253-4, TO-253AA |
Key Features
- High frequency transition up to 9 GHz, making it suitable for RF and microwave applications.
- Maximum collector-emitter breakdown voltage of 15V.
- Low noise figure ranging from 1.2dB to 1.9dB at frequencies between 900MHz and 2GHz.
- Maximum power dissipation of 150mW.
- Minimum DC current gain (hFE) of 60 at 5mA and 6V.
- Surface mount technology in SOT143B package.
Applications
The BFG505/X,215 transistor is designed for various RF and microwave applications, including but not limited to:
- RF amplifiers and oscillators.
- Microwave circuits.
- Wireless communication systems.
- High-frequency signal processing.
Q & A
- Q: What is the maximum collector-emitter breakdown voltage of the BFG505/X,215 transistor?
A: The maximum collector-emitter breakdown voltage is 15V. - Q: What is the frequency transition range of the BFG505/X,215 transistor?
A: The frequency transition range is up to 9 GHz. - Q: What is the noise figure of the BFG505/X,215 transistor at typical frequencies?
A: The noise figure ranges from 1.2dB to 1.9dB at frequencies between 900MHz and 2GHz. - Q: What is the maximum power dissipation of the BFG505/X,215 transistor?
A: The maximum power dissipation is 150mW. - Q: What is the minimum DC current gain (hFE) of the BFG505/X,215 transistor?
A: The minimum DC current gain (hFE) is 60 at 5mA and 6V. - Q: What is the operating temperature range of the BFG505/X,215 transistor?
A: The operating temperature range is up to 175°C (TJ). - Q: How can I ensure the authenticity of the BFG505/X,215 transistor from NXP?
A: Ensure that you purchase from authorized distributors or directly from NXP. Suppliers like Ovaga also verify the credentials of original NXP manufacturers and authorized agents. - Q: What is the warranty period for the BFG505/X,215 transistor?
A: The warranty period is typically 1 year, covering defects in materials and workmanship under normal use. - Q: How can I place an order for the BFG505/X,215 transistor?
A: You can place an order through the supplier's website by selecting the 'Add to Cart' option and proceeding to the checkout page to enter your payment and shipping information. - Q: What are the accepted payment methods for purchasing the BFG505/X,215 transistor?
A: Accepted payment methods include Wire Transfer, PayPal, Credit Cards, Western Union, and Money Gram.
