BFT93W,115
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NXP USA Inc. BFT93W,115

Manufacturer No:
BFT93W,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS PNP 12V 4GHZ SOT323-3
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BFT93W,115 is a PNP wideband transistor manufactured by NXP USA Inc. This component is designed for high-frequency applications and is characterized by its high transition frequency and low noise figure. Although it is no longer in production, it remains relevant for legacy systems and specific design requirements. The transistor is housed in a plastic SOT323 (S-mini) package, which is compact and suitable for surface-mounting.

Key Specifications

Parameter Value Unit
Package SOT323 (S-mini), SC-70 -
Transition Frequency 4 GHz -
Noise Figure (Typ @ f) 2.4 dB ~ 3 dB @ 500 MHz ~ 1 GHz dB
Maximum Power 300 mW mW
DC Current Gain (hFE) (Min) @ Ic, Vce Specified in datasheet -
Product Status Obsolete -

Key Features

  • High Transition Frequency: The BFT93W,115 has a transition frequency of 4 GHz, making it suitable for high-frequency applications.
  • Low Noise Figure: It features a low noise figure of 2.4 dB to 3 dB at frequencies between 500 MHz and 1 GHz.
  • Compact Package: The transistor is packaged in a small SOT323 (S-mini) or SC-70 package, ideal for surface-mounting in compact designs.
  • High Power Handling: The component can handle up to 300 mW of power.

Applications

The BFT93W,115 is designed for use in various high-frequency applications, including:

  • RF amplifiers and circuits
  • Wideband amplifiers
  • High-frequency switching applications
  • Legacy systems requiring specific transistor characteristics

Q & A

  1. What is the transition frequency of the BFT93W,115 transistor?

    The transition frequency of the BFT93W,115 transistor is 4 GHz.

  2. What is the noise figure of the BFT93W,115 transistor?

    The noise figure of the BFT93W,115 transistor is typically between 2.4 dB and 3 dB at frequencies between 500 MHz and 1 GHz.

  3. What is the maximum power handling of the BFT93W,115 transistor?

    The maximum power handling of the BFT93W,115 transistor is 300 mW.

  4. In what package is the BFT93W,115 transistor available?

    The BFT93W,115 transistor is available in a SOT323 (S-mini) or SC-70 package.

  5. What is the current production status of the BFT93W,115 transistor?

    The BFT93W,115 transistor is no longer in production and is listed as obsolete.

  6. What are some typical applications for the BFT93W,115 transistor?

    The BFT93W,115 transistor is typically used in RF amplifiers, wideband amplifiers, high-frequency switching applications, and legacy systems requiring specific transistor characteristics.

  7. What is the DC current gain (hFE) of the BFT93W,115 transistor?

    The DC current gain (hFE) of the BFT93W,115 transistor is specified in the datasheet and varies based on the collector current and collector-emitter voltage.

  8. Is the BFT93W,115 transistor suitable for surface-mounting?

    Yes, the BFT93W,115 transistor is suitable for surface-mounting due to its SOT323 (S-mini) or SC-70 package).

  9. Where can I find detailed specifications for the BFT93W,115 transistor?

    Detailed specifications for the BFT93W,115 transistor can be found in the datasheet available from NXP Semiconductors and other electronics component distributors).

  10. Can I still purchase the BFT93W,115 transistor?

    Although the BFT93W,115 transistor is no longer in production, it may still be available from some distributors or through surplus stock. However, availability is limited).

Product Attributes

Transistor Type:PNP
Voltage - Collector Emitter Breakdown (Max):12V
Frequency - Transition:4GHz
Noise Figure (dB Typ @ f):2.4dB ~ 3dB @ 500MHz ~ 1GHz
Gain:- 
Power - Max:300mW
DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 30mA, 5V
Current - Collector (Ic) (Max):50mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70
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Similar Products

Part Number BFT93W,115 BFT92W,115
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
Transistor Type PNP PNP
Voltage - Collector Emitter Breakdown (Max) 12V 15V
Frequency - Transition 4GHz 4GHz
Noise Figure (dB Typ @ f) 2.4dB ~ 3dB @ 500MHz ~ 1GHz 2.5dB ~ 3dB @ 500MHz ~ 1GHz
Gain - -
Power - Max 300mW 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 30mA, 5V 20 @ 15mA, 10V
Current - Collector (Ic) (Max) 50mA 25mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package SC-70 SC-70

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