Overview
The BFG520W/X,115 is an NPN silicon planar epitaxial transistor produced by NXP USA Inc. This component is designed for high-frequency applications, particularly in the GHz range. It is packaged in a 4-pin dual-emitter SOT343N plastic package, which is a surface mount type. The transistor is known for its high power gain, low noise figure, and high transition frequency, making it suitable for a variety of RF front-end wideband applications.
Key Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| VCBO (Collector-Base Voltage) | Open Emitter | - | - | 20 | V |
| VCES (Collector-Emitter Voltage) | RBE = 0 | - | - | 15 | V |
| VEBO (Emitter-Base Voltage) | Open Collector | - | - | 2.5 | V |
| IC (Collector Current) | - | - | - | 70 | mA |
| Ptot (Total Power Dissipation) | Ts ≤ 85 °C | - | - | 500 | mW |
| hFE (DC Current Gain) | IC = 20 mA; VCE = 6 V | 60 | 120 | 250 | - |
| fT (Transition Frequency) | IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C | - | - | 9 | GHz |
| GUM (Maximum Unilateral Power Gain) | IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C | - | - | 17 | dB |
| |S21|² (Insertion Power Gain) | IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C | 16 | 17 | - | dB |
| F (Noise Figure) | Γs = Γopt; IC = 5 mA; VCE = 6 V; f = 900 MHz | 1.1 | 1.6 | - | dB |
Key Features
- High power gain
- Low noise figure
- High transition frequency (up to 9 GHz)
- Gold metallization for excellent reliability
- Surface mount package (SOT343N)
- Dual-emitter configuration
Applications
The BFG520W/X,115 transistor is widely used in RF front-end wideband applications, including:
- Analog and digital cellular telephones
- Cordless telephones (CT2, CT3, PCN, DECT, etc.)
- Radar detectors
- Pagers
- Satellite television tuners (SATV)
- Repeater amplifiers in fibre-optic systems
Q & A
- What is the package type of the BFG520W/X,115 transistor? The BFG520W/X,115 is packaged in a 4-pin dual-emitter SOT343N plastic package, which is a surface mount type.
- What is the maximum collector current for the BFG520W/X,115? The maximum collector current (IC) is 70 mA.
- What is the transition frequency of the BFG520W/X,115? The transition frequency (fT) is up to 9 GHz.
- What are the typical applications of the BFG520W/X,115 transistor? It is used in RF front-end wideband applications such as cellular telephones, cordless telephones, radar detectors, pagers, and satellite television tuners.
- What is the noise figure of the BFG520W/X,115 transistor? The noise figure (F) is between 1.1 and 1.6 dB at specific conditions.
- What is the maximum unilateral power gain of the BFG520W/X,115 transistor? The maximum unilateral power gain (GUM) is up to 17 dB.
- What is the total power dissipation limit for the BFG520W/X,115 transistor? The total power dissipation (Ptot) is limited to 500 mW at Ts ≤ 85 °C.
- Is the BFG520W/X,115 transistor still in production? The BFG520W/X,115 is listed as obsolete.
- What is the collector-base voltage rating for the BFG520W/X,115 transistor? The collector-base voltage (VCBO) is rated up to 20 V.
- What is the emitter-base voltage rating for the BFG520W/X,115 transistor? The emitter-base voltage (VEBO) is rated up to 2.5 V.
