BFT25A,215
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NXP USA Inc. BFT25A,215

Manufacturer No:
BFT25A,215
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 5V 5GHZ TO236AB
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The BFT25A,215 is a silicon NPN transistor manufactured by NXP USA Inc., designed for use in RF low power amplifiers. It is encapsulated in a 3-pin plastic SOT23 package, making it suitable for compact and high-frequency applications such as pocket telephones and paging systems with signal frequencies up to 2 GHz.

Key Specifications

ParameterConditionsMinTypMaxUnit
VCBO (Collector-Base Voltage)Open Emitter--8V
VCEO (Collector-Emitter Voltage)Open Base--5V
VEBO (Emitter-Base Voltage)Open Collector--2V
IC (DC Collector Current)---6.5mA
Ptot (Total Power Dissipation)Ts = 165°C--32mW
Tstg (Storage Temperature)--65-150°C
Tj (Junction Temperature)---175°C

Key Features

  • Low current consumption (100 μA to 1 mA)
  • Low noise figure
  • Gold metallization for excellent reliability
  • Wideband operation up to 5 GHz
  • Compact SOT23 package

Applications

The BFT25A,215 is primarily intended for use in RF low power amplifiers, such as:

  • Pocket telephones
  • Paging systems
  • Other high-frequency communication devices requiring low noise and low power consumption.

Q & A

  1. What is the BFT25A,215 transistor used for? The BFT25A,215 is used in RF low power amplifiers, such as pocket telephones and paging systems.
  2. What is the maximum collector-emitter voltage of the BFT25A,215? The maximum collector-emitter voltage (VCEO) is 5 V.
  3. What is the package type of the BFT25A,215? The transistor is encapsulated in a 3-pin plastic SOT23 package.
  4. What are the key features of the BFT25A,215? Key features include low current consumption, low noise figure, and gold metallization for excellent reliability.
  5. What is the maximum DC collector current of the BFT25A,215? The maximum DC collector current (IC) is 6.5 mA.
  6. What is the total power dissipation limit of the BFT25A,215? The total power dissipation (Ptot) is limited to 32 mW at Ts = 165°C.
  7. What is the storage temperature range for the BFT25A,215? The storage temperature range is from -65°C to 150°C.
  8. What is the junction temperature limit of the BFT25A,215? The junction temperature (Tj) should not exceed 175°C.
  9. Is the BFT25A,215 suitable for high-frequency applications? Yes, it is suitable for high-frequency applications up to 5 GHz.
  10. Where can I find detailed specifications for the BFT25A,215? Detailed specifications can be found in the official NXP data sheet or on distributor websites like Mouser, Farnell, and TME.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):5V
Frequency - Transition:5GHz
Noise Figure (dB Typ @ f):1.8dB ~ 2dB @ 1GHz
Gain:- 
Power - Max:32mW
DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 500µA, 1V
Current - Collector (Ic) (Max):6.5mA
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23 (TO-236AB)
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Similar Products

Part Number BFT25A,215 BFT25,215
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 5V 5V
Frequency - Transition 5GHz 2.3GHz
Noise Figure (dB Typ @ f) 1.8dB ~ 2dB @ 1GHz 5.5dB @ 500MHz
Gain - -
Power - Max 32mW 30mW
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 500µA, 1V 20 @ 1mA, 1V
Current - Collector (Ic) (Max) 6.5mA 6.5mA
Operating Temperature 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 (TO-236AB) SOT-23 (TO-236AB)

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