Overview
The BFT25A,215 is a silicon NPN transistor produced by NXP USA Inc. It is primarily designed for use in RF low power amplifiers, such as pocket telephones and paging systems, with signal frequencies up to 2 GHz. The transistor is encapsulated in a 3-pin plastic SOT23 package, ensuring compact and efficient integration into various electronic devices.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VCBO (Collector-Base Voltage) | Open Emitter | - | - | 8 | V |
| VCEO (Collector-Emitter Voltage) | Open Base | - | - | 5 | V |
| VEBO (Emitter-Base Voltage) | Open Collector | - | - | 2 | V |
| IC (DC Collector Current) | - | - | - | 6.5 | mA |
| Ptot (Total Power Dissipation) | Up to Ts = 165°C | - | - | 32 | mW |
| Tstg (Storage Temperature) | - | -65 | - | 150 | °C |
| Tj (Junction Temperature) | - | - | - | 175 | °C |
| hFE (DC Current Gain) | @ Ic = 500 µA, Vce = 1 V | 50 | - | - | - |
| Noise Figure (Fmin) | @ f = 1 GHz, Vce = 1 V, Ic = 1 mA | - | 1.8-2 | - | dB |
Key Features
- Low current consumption (100 µA to 1 mA)
- Low noise figure, typically 1.8-2 dB at 1 GHz
- Gold metallization ensuring excellent reliability
- Wideband operation up to 5 GHz
- Compact SOT23 package for surface mount applications
Applications
The BFT25A,215 is primarily used in RF low power amplifiers, such as:
- Pocket telephones
- Paging systems
- Other RF applications requiring low noise and high frequency operation up to 2 GHz
Q & A
- What is the primary application of the BFT25A,215 transistor?
The BFT25A,215 is primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems.
- What is the maximum collector-emitter voltage (VCEO) of the BFT25A,215?
The maximum collector-emitter voltage (VCEO) is 5 V.
- What is the typical noise figure of the BFT25A,215 at 1 GHz?
The typical noise figure is 1.8-2 dB at 1 GHz.
- What is the maximum DC collector current (IC) of the BFT25A,215?
The maximum DC collector current (IC) is 6.5 mA.
- What is the package type of the BFT25A,215?
The BFT25A,215 is encapsulated in a 3-pin plastic SOT23 package.
- What is the maximum junction temperature (Tj) of the BFT25A,215?
The maximum junction temperature (Tj) is 175°C.
- What is the typical DC current gain (hFE) of the BFT25A,215 at Ic = 500 µA and Vce = 1 V?
The typical DC current gain (hFE) is 50.
- Is the BFT25A,215 still in production?
No, the BFT25A,215 is obsolete and no longer manufactured.
- What are some potential substitutes for the BFT25A,215?
Available substitutes can be found through the manufacturer's website or authorized distributors.
- What is the storage temperature range for the BFT25A,215?
The storage temperature range is -65°C to 150°C.
