Overview
The MMBTH10LT1 is a VHF/UHF NPN silicon transistor manufactured by onsemi. This transistor is designed for high-frequency applications, particularly in the VHF and UHF ranges. It is packaged in a SOT-23 (TO-236) case, which is Pb-free, halogen-free, and RoHS compliant. The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | - | 25 | Vdc |
| Collector-Base Voltage | VCBO | - | - | 30 | Vdc |
| Emitter-Base Voltage | VEBO | - | - | 3.0 | Vdc |
| Collector Cutoff Current | ICBO | - | - | 100 nA | dc |
| Emitter Cutoff Current | IEBO | - | - | 100 nA | dc |
| DC Current Gain | hFE | 60 | 120 | - | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.5 | Vdc |
| Base-Emitter On Voltage | VBE | - | - | 0.95 | Vdc |
| Current-Gain Bandwidth Product | fT | - | 650-800 | - | MHz |
| Collector-Base Capacitance | Ccb | - | - | 0.7 pF | - |
| Common-Base Feedback Capacitance | Crb | - | - | 0.65 pF | - |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | - | +150 | °C |
Key Features
- Pb-free, Halogen-free, and RoHS Compliant: Ensures environmental compliance and safety.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring stringent quality standards.
- High Frequency Operation: Designed for VHF and UHF applications with a current-gain bandwidth product of 650-800 MHz.
- Low Saturation Voltage: Collector-Emitter saturation voltage of 0.5 Vdc, which is beneficial for low power consumption.
- Compact SOT-23 Package: Small footprint suitable for space-constrained designs.
Applications
- VHF and UHF Amplifiers: Ideal for amplifying high-frequency signals in radio and communication systems.
- Automotive Electronics: AEC-Q101 qualification makes it suitable for use in automotive systems.
- RF and Microwave Circuits: Can be used in various RF and microwave applications due to its high frequency characteristics.
- General Purpose Amplification: Suitable for general-purpose amplification in electronic circuits requiring high-frequency performance.
Q & A
- What is the collector-emitter voltage rating of the MMBTH10LT1?
The collector-emitter voltage rating is 25 Vdc.
- Is the MMBTH10LT1 RoHS compliant?
Yes, the MMBTH10LT1 is Pb-free, halogen-free, and RoHS compliant.
- What is the typical DC current gain (hFE) of the MMBTH10LT1?
The typical DC current gain (hFE) is 120.
- What is the current-gain bandwidth product (fT) of the MMBTH10LT1?
The current-gain bandwidth product (fT) is 650-800 MHz.
- What is the junction and storage temperature range for the MMBTH10LT1?
The junction and storage temperature range is -55°C to +150°C.
- What package type is used for the MMBTH10LT1?
The MMBTH10LT1 is packaged in a SOT-23 (TO-236) case.
- Is the MMBTH10LT1 suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
- What are the typical applications of the MMBTH10LT1?
Typical applications include VHF and UHF amplifiers, automotive electronics, RF and microwave circuits, and general-purpose amplification.
- What is the collector-emitter saturation voltage (VCE(sat)) of the MMBTH10LT1?
The collector-emitter saturation voltage (VCE(sat)) is 0.5 Vdc.
- What is the base-emitter on voltage (VBE) of the MMBTH10LT1?
The base-emitter on voltage (VBE) is 0.95 Vdc.
