MX0912B351Y
  • Share:

Ampleon USA Inc. MX0912B351Y

Manufacturer No:
MX0912B351Y
Manufacturer:
Ampleon USA Inc.
Package:
Bulk
Description:
RF POWER BIPOLAR TRANSISTOR, 1-E
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MX0912B351Y is a high-performance RF bipolar transistor manufactured by Ampleon USA Inc. This component is designed for use in various RF applications, particularly in the frequency range of 960-1215 MHz. It is part of Ampleon's extensive portfolio of RF power solutions, known for their high efficiency and ruggedness.

Key Specifications

ParameterValue
ManufacturerAmpleon USA Inc.
Part NumberMX0912B351Y
Transistor TypeRF Bipolar Transistor (NPN)
Frequency Range960-1215 MHz
Gain7 dB
Package TypeSOT-439A
Mounting TypeSurface Mount
Operating Temperature (TJ)200°C
RoHS StatusLead Free / RoHS Compliant

Key Features

  • High gain of 7 dB in the frequency range of 960-1215 MHz.
  • Low power consumption and high efficiency, making it suitable for a variety of applications.
  • Surface Mount packaging in SOT-439A, which is convenient for layout on PCB circuit boards due to its small size.
  • Optimal operating temperature of 200°C, ensuring reliability in most electronic equipment.
  • Lead Free and RoHS Compliant, aligning with environmental regulations.

Applications

  • Household appliances
  • Power chargers
  • LED lighting
  • Computer motherboards
  • Electric Vehicles

Q & A

  1. What is the frequency range of the MX0912B351Y transistor? The MX0912B351Y operates in the frequency range of 960-1215 MHz.
  2. What is the gain of the MX0912B351Y transistor? The gain of the MX0912B351Y is 7 dB.
  3. What is the package type of the MX0912B351Y? The MX0912B351Y comes in a SOT-439A package.
  4. Is the MX0912B351Y RoHS compliant? Yes, the MX0912B351Y is Lead Free and RoHS Compliant.
  5. What is the optimal operating temperature of the MX0912B351Y? The optimal operating temperature (TJ) is 200°C.
  6. What are some common applications of the MX0912B351Y? Common applications include household appliances, power chargers, LED lighting, computer motherboards, and electric vehicles.
  7. What is the mounting type of the MX0912B351Y? The mounting type is Surface Mount.
  8. Is the MX0912B351Y suitable for high-power applications? Yes, it is designed for high-power RF applications.
  9. Where can I find the datasheet for the MX0912B351Y? The datasheet can be found on the manufacturer's website or through distributors like Dyethin or Mouser Electronics.
  10. What is the inventory quantity of the MX0912B351Y typically available? The inventory quantity can vary, but it is often in the thousands, such as 12,579 units as listed by some distributors.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):20V
Frequency - Transition:1.215GHz
Noise Figure (dB Typ @ f):- 
Gain:8dB
Power - Max:960W
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Current - Collector (Ic) (Max):21A
Operating Temperature:200°C (TJ)
Mounting Type:Chassis Mount
Package / Case:SOT-439A
Supplier Device Package:CDFM2
0 Remaining View Similar

In Stock

-
480

Please send RFQ , we will respond immediately.

Same Series
CBC46W4S10G0X/AA
CBC46W4S10G0X/AA
CONN D-SUB RCPT 46POS CRIMP
CBC13W3S10HE20/AA
CBC13W3S10HE20/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S200T0
DD26S200T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S500X/AA
DD26S2S500X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50TX/AA
DD26S2S50TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V3X/AA
DD26S2S0V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V5X/AA
DD26S2S0V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V5X/AA
DD26S2S50V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S600X
DD44S32S600X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S3200T0
DD44S3200T0
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE3X
DD26S20WE3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60V30
DD44S32S60V30
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

BFU660F,115
BFU660F,115
NXP USA Inc.
RF TRANS NPN 5.5V 21GHZ 4DFP
BFR93AWE6327
BFR93AWE6327
Infineon Technologies
RF BIPOLAR TRANSISTOR
BFS17WH6327XTSA1
BFS17WH6327XTSA1
Infineon Technologies
RF TRANS NPN 15V 1.4GHZ SOT323-3
BFU530WF
BFU530WF
NXP USA Inc.
RF TRANS NPN 12V 11GHZ SOT323-3
BFU520VL
BFU520VL
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT143B
BFG505/X,215
BFG505/X,215
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143B
BFG97,115
BFG97,115
NXP USA Inc.
RF TRANS NPN 15V 5.5GHZ SOT223
BFG480W,135
BFG480W,135
NXP USA Inc.
RF TRANS NPN 4.5V 21GHZ CMPAK-4
BFG480W,115
BFG480W,115
NXP USA Inc.
RF TRANS NPN 4.5V 21GHZ CMPAK-4
BFT25A,215
BFT25A,215
NXP USA Inc.
RF TRANS NPN 5V 5GHZ TO236AB
BFR92AW,135
BFR92AW,135
NXP USA Inc.
RF TRANS NPN 15V 5GHZ SOT323-3
MRF5812R1
MRF5812R1
Microsemi Corporation
RF TRANS NPN 15V 5GHZ 8SO

Related Product By Brand

BLF3G21-30
BLF3G21-30
Ampleon USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
BLF188XRGJ
BLF188XRGJ
Ampleon USA Inc.
RF FET LDMOS 135V 24DB SOT1248C
BLF183XRSU
BLF183XRSU
Ampleon USA Inc.
RF FET LDMOS 135V 28DB SOT1121B
BLF888BS,112
BLF888BS,112
Ampleon USA Inc.
RF MOSFET LDMOS DL 50V SOT539B
BLF7G20LS-90P,118
BLF7G20LS-90P,118
Ampleon USA Inc.
POWER FIELD-EFFECT TRANSISTOR, N
BLF8G09LS-270GWJ
BLF8G09LS-270GWJ
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT1244C
BLF7G22LS-130,118
BLF7G22LS-130,118
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF6G10LS-135RN:11
BLF6G10LS-135RN:11
Ampleon USA Inc.
RF FET LDMOS 65V 21DB SOT502B
BLF6G27-10G,112
BLF6G27-10G,112
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C
BLF878,112
BLF878,112
Ampleon USA Inc.
RF FET LDMOS 89V 21DB SOT979A
BLF6G20-180PN,112
BLF6G20-180PN,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539A
BLF6G27LS-40PHJ
BLF6G27LS-40PHJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB