Overview
The BLF7G21LS-160P,118 is a 160 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. for use in base station applications. This transistor operates within the frequency range of 1800 MHz to 2050 MHz and is also suitable for operation at 1495 MHz to 1511 MHz. Although this product has been discontinued, it remains relevant for understanding high-performance RF power amplifiers.
Key Specifications
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| f range | frequency range | 1800 | 2050 | MHz | ||
| P L(3dB) | nominal output power at 3 dB gain compression | Test signal: 2-c W-CDMA | 160 | W | ||
| G p | power gain | P L(AV) = 45 W; V DS = 28 V | 17 | 18 | dB | |
| RL in | input return loss | P L(AV) = 45 W; V DS = 28 V; I Dq = 1080 mA | -15 | -8 | dB | |
| η D | drain efficiency | P L(AV) = 45 W; V DS = 28 V; 1930 MHz ≤ f ≤ 1990 MHz; I Dq = 1080 mA | 31 | 34 | % | |
| P L(AV) | average output power | 45 | W | |||
| ACPR 5M | adjacent channel power ratio (5 MHz) | P L(AV) = 45 W; V DS = 28 V; 1930 MHz ≤ f ≤ 1990 MHz; I Dq = 1080 mA | -30 | -25 | dBc |
Key Features
- Excellent ruggedness
- High efficiency
- Low thermal resistance providing excellent thermal stability
- Designed for broadband operation (1800 MHz to 2050 MHz)
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent pre-distortability
- Internally matched for ease of use
- Integrated ESD protection
- Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
Applications
- RF power amplifiers for base stations
- Multi carrier applications in the 1800 MHz to 2050 MHz frequency range
Q & A
- What is the BLF7G21LS-160P,118 used for? The BLF7G21LS-160P,118 is used in RF power amplifiers for base stations and multi-carrier applications within the 1800 MHz to 2050 MHz frequency range.
- What is the nominal output power of the BLF7G21LS-160P,118? The nominal output power at 3 dB gain compression is 160 W.
- What is the frequency range of the BLF7G21LS-160P,118? The transistor operates within the frequency range of 1800 MHz to 2050 MHz and is also suitable for operation at 1495 MHz to 1511 MHz.
- What are the key features of the BLF7G21LS-160P,118? Key features include excellent ruggedness, high efficiency, low thermal resistance, and integrated ESD protection.
- Is the BLF7G21LS-160P,118 still available for purchase? The product has been discontinued, but it may still be available from some distributors or through secondary markets.
- What is the typical drain efficiency of the BLF7G21LS-160P,118? The typical drain efficiency is between 31% and 34% under specified conditions.
- Does the BLF7G21LS-160P,118 comply with RoHS regulations? Yes, it complies with the Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC.
- What is the package type of the BLF7G21LS-160P,118? The transistor is packaged in a CDFM4 (SOT1121B) flange mount package.
- What are some common applications of the BLF7G21LS-160P,118? Common applications include RF power amplifiers for base stations and multi-carrier applications.
- What is the maximum drain current of the BLF7G21LS-160P,118? The maximum drain current is 18 A.
