Overview
The BLF6G10-45,135 is a 45 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. for base station applications. This transistor operates within the frequency range of 700 MHz to 1000 MHz, making it suitable for various wireless communication systems, including W-CDMA base stations. The device is known for its high efficiency, excellent ruggedness, and integrated ESD protection, which enhance its reliability and performance in demanding RF power amplifier applications.
Key Specifications
| Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|
| Frequency Range | 700 | 1000 | MHz | ||
| Nominal Output Power at 3 dB Gain Compression | 45 | W | |||
| Power Gain | PL(AV) = 1 W; VDS = 28 V | 21 | 22.5 | 23.9 | dB |
| Input Return Loss | PL(AV) = 1 W; VDS = 28 V; IDq = 350 mA | -13 | -8 | dB | |
| Drain Efficiency | PL(AV) = 1 W; VDS = 28 V; 920 MHz < f < 960 MHz; IDq = 350 mA | 6.9 | 7.8 | % | |
| Adjacent Channel Power Ratio (ACPR) | PL(AV) = 1 W; VDS = 28 V; 920 MHz < f < 960 MHz; IDq = 350 mA | -48.5 | -45.5 | dBc | |
| Drain-Source Voltage | 65 | V | |||
| Gate-Source Voltage | -0.5 | 13 | V | ||
| Drain Current | 13 | A | |||
| Junction Temperature | 225 | °C |
Key Features
- Easy power control
- Integrated ESD protection
- Excellent ruggedness and reliability
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (700 MHz to 1000 MHz)
- Internally matched for ease of use
- Compliant to Directive 2002/95/EC (RoHS)
Applications
- RF power amplifiers for W-CDMA base stations
- Multicarrier applications in the 700 MHz to 1000 MHz frequency range
Q & A
- What is the frequency range of the BLF6G10-45,135 transistor? The frequency range is from 700 MHz to 1000 MHz.
- What is the nominal output power at 3 dB gain compression for this transistor? The nominal output power is 45 W.
- What is the typical power gain of the BLF6G10-45,135? The typical power gain is 22.5 dB.
- What is the drain efficiency of this transistor under typical conditions? The drain efficiency is typically 7.8%.
- Does the BLF6G10-45,135 have integrated ESD protection? Yes, it does have integrated ESD protection.
- What is the maximum drain-source voltage for this transistor? The maximum drain-source voltage is 65 V.
- What is the maximum gate-source voltage for this transistor? The maximum gate-source voltage is 13 V.
- Is the BLF6G10-45,135 RoHS compliant? Yes, it is compliant to Directive 2002/95/EC (RoHS).
- What are the typical applications of the BLF6G10-45,135 transistor? Typical applications include RF power amplifiers for W-CDMA base stations and multicarrier applications in the 700 MHz to 1000 MHz frequency range.
- What is the package type of the BLF6G10-45,135 transistor? The transistor is packaged in a ceramic dual flat no-lead (CDFM) package, specifically SOT608A.
