Overview
The BLF7G27LS-100,112 is a high-performance LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed and manufactured by Ampleon USA Inc. This transistor is specifically tailored for RF power amplifier applications in the frequency range of 2.5 GHz to 2.7 GHz, making it ideal for base station and multicarrier systems. It is known for its excellent pre-distortability, ruggedness, and high efficiency, which are crucial for reliable and efficient RF power amplification.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Part Number | BLF7G27LS-100,112 | |
| Manufacturer | Ampleon USA Inc. | |
| Transistor Type | LDMOS | |
| Frequency Range | 2.5 GHz ~ 2.7 GHz | |
| Gain | 18 dB | |
| Voltage - Rated | 65 V | |
| Voltage - Test | 28 V | |
| Current - Test | 900 mA | |
| Current Rating | 28 A | |
| Power - Output | 20 W | |
| Package / Case | SOT-502B | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Mounting Style | SMD/SMT | |
| Drain-source Breakdown Voltage | 65 V |
Key Features
- Designed for low memory effects, providing excellent pre-distortability.
- Excellent ruggedness and high reliability.
- Low thermal resistance (Rth) ensuring excellent thermal stability.
- Internally matched for ease of use.
- Integrated ESD protection.
- High efficiency in RF power amplification.
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS).
Applications
The BLF7G27LS-100,112 is primarily used in RF power amplifiers for base stations and multicarrier applications. Its frequency range and performance characteristics make it suitable for various wireless communication systems, including those used in cellular networks and other high-power RF applications.
Q & A
- What is the frequency range of the BLF7G27LS-100,112 transistor?
The frequency range is 2.5 GHz to 2.7 GHz. - What is the gain of the BLF7G27LS-100,112 transistor?
The gain is 18 dB. - What is the rated voltage of the BLF7G27LS-100,112 transistor?
The rated voltage is 65 V. - What is the test voltage of the BLF7G27LS-100,112 transistor?
The test voltage is 28 V. - What is the current rating of the BLF7G27LS-100,112 transistor?
The current rating is 28 A. - What is the output power of the BLF7G27LS-100,112 transistor?
The output power is 20 W. - What package type does the BLF7G27LS-100,112 transistor use?
The package type is SOT-502B. - Is the BLF7G27LS-100,112 transistor RoHS compliant?
Yes, it is lead free and RoHS compliant. - What are the key features of the BLF7G27LS-100,112 transistor?
Key features include low memory effects, excellent ruggedness, low thermal resistance, internal matching, integrated ESD protection, and high efficiency. - What are the primary applications of the BLF7G27LS-100,112 transistor?
The primary applications are in RF power amplifiers for base stations and multicarrier systems.
