Overview
The AFT05MS003NT1 is a high-performance RF power LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor manufactured by NXP Semiconductors. This component is designed for use in RF power amplifiers and is optimized for wideband applications. It operates within the frequency range of 1.8 to 941 MHz, making it versatile for various wireless communication systems. The transistor is known for its high gain and efficient power output, ensuring reliable performance in demanding RF environments.
Key Specifications
Parameter | Value |
---|---|
Manufacturer Part Number | AFT05MS003NT1 |
Manufacturer | NXP Semiconductors / Freescale |
Description | IC TRANS RF LDMOS |
Transistor Type | LDMOS |
Package / Case | TO-243AA (SOT-89-3) |
Voltage - Rated | 30V |
Voltage - Test | 7.5V |
Power - Output | 3W |
Gain | 20.8dB at 520MHz |
Frequency | 520MHz |
Current - Test | 100mA |
RoHS Compliant | Yes |
Key Features
- High gain of 20.8dB at 520MHz, ensuring strong signal amplification.
- Efficient power output of 3W, suitable for high-power RF applications.
- Optimized for operation at 7.5V with a test current of 100mA.
- Voltage rated at 30V for robust performance.
- LDMOS technology for high reliability and efficiency.
- Wideband frequency operation from 1.8 to 941 MHz.
- TO-243AA (SOT-89-3) package for compact and reliable mounting.
- Digi-Reel packaging for optimal handling and storage.
- Lead-free and RoHS compliant, ensuring environmental safety.
Applications
The AFT05MS003NT1 is designed for use in various RF power amplifier applications, including but not limited to:
- Wireless communication systems such as cellular base stations, repeaters, and amplifiers.
- Broadcasting equipment, including FM and TV transmitters.
- Industrial, scientific, and medical (ISM) band applications.
- Military and aerospace communication systems.
- General-purpose RF amplification where high gain and efficiency are required.
Q & A
- What is the AFT05MS003NT1 transistor used for?
The AFT05MS003NT1 is used in RF power amplifier applications, particularly in wireless communication systems, broadcasting equipment, and other high-power RF environments. - What is the frequency range of the AFT05MS003NT1?
The AFT05MS003NT1 operates within the frequency range of 1.8 to 941 MHz. - What is the power output of the AFT05MS003NT1?
The power output of the AFT05MS003NT1 is 3W. - What is the gain of the AFT05MS003NT1 at 520MHz?
The gain of the AFT05MS003NT1 at 520MHz is 20.8dB. - What is the rated voltage of the AFT05MS003NT1?
The rated voltage of the AFT05MS003NT1 is 30V. - Is the AFT05MS003NT1 RoHS compliant?
Yes, the AFT05MS003NT1 is RoHS compliant. - What package type does the AFT05MS003NT1 use?
The AFT05MS003NT1 uses the TO-243AA (SOT-89-3) package. - What is the test current for the AFT05MS003NT1?
The test current for the AFT05MS003NT1 is 100mA at 7.5V. - Is the AFT05MS003NT1 suitable for high-power RF applications?
Yes, the AFT05MS003NT1 is designed for high-power RF applications due to its efficient power output and high gain. - Where can I find more detailed specifications for the AFT05MS003NT1?
You can find detailed specifications in the datasheet available from NXP Semiconductors or through authorized distributors like Mouser, Digi-Key, and Ariat-Tech.