BLF7G20LS-250P,118
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Ampleon USA Inc. BLF7G20LS-250P,118

Manufacturer No:
BLF7G20LS-250P,118
Manufacturer:
Ampleon USA Inc.
Package:
Tape & Reel (TR)
Description:
RF FET LDMOS 65V 18DB SOT539B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF7G20LS-250P,118 is a 250 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. for use in RF power amplifiers, particularly in base station applications. Although this product has been discontinued, it remains relevant for understanding high-performance RF components. The transistor operates within the frequency range of 1805 MHz to 1880 MHz, making it suitable for W-CDMA base stations and multicarrier applications.

Key Specifications

Symbol Parameter Conditions Min Typ/Nom Max Unit
f range frequency range - 1805 - 1880 MHz
P L(3dB) nominal output power at 3 dB gain compression Test signal: 2-c W-CDMA - 250 - W
G p power gain P L(AV) = 70 W; V DS = 28 V 16 18 - dB
RL in input return loss P L(AV) = 70 W; V DS = 28 V; I Dq = 1900 mA -12 - - dB
η D drain efficiency P L(AV) = 70 W; V DS = 28 V; 1805 MHz ≤ f ≤ 1880 MHz; I Dq = 1900 mA 30 35 - %
P L(AV) average output power - - 70 - W
ACPR adjacent channel power ratio P L(AV) = 70 W; V DS = 28 V; 1805 MHz ≤ f ≤ 1880 MHz; I Dq = 1900 mA -29.5 -24.5 - dBc

Key Features

  • Excellent Ruggedness: The BLF7G20LS-250P,118 is designed to withstand harsh operating conditions.
  • High Efficiency: It offers high drain efficiency, typically up to 35%, ensuring efficient power use.
  • Low Thermal Resistance: The transistor features low Rth, providing excellent thermal stability.
  • Broadband Operation: Designed for operation within the 1805 MHz to 1880 MHz frequency range.
  • Lower Output Capacitance: Optimized for improved performance in Doherty applications.
  • Low Memory Effects: Provides excellent pre-distortability due to low memory effects.
  • Internally Matched: Simplifies the design process by being internally matched.
  • Integrated ESD Protection: Includes built-in ESD protection for enhanced reliability.
  • RoHS Compliance: Compliant with the Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC.

Applications

  • RF Power Amplifiers for W-CDMA Base Stations: Ideal for use in base station applications requiring high power and efficiency.
  • Multicarrier Applications: Suitable for multicarrier operations within the 1805 MHz to 1880 MHz frequency range.

Q & A

  1. What is the frequency range of the BLF7G20LS-250P,118?

    The frequency range is from 1805 MHz to 1880 MHz.

  2. What is the nominal output power at 3 dB gain compression for this transistor?

    The nominal output power at 3 dB gain compression is 250 W.

  3. What is the typical power gain of the BLF7G20LS-250P,118?

    The typical power gain is 18 dB.

  4. What is the drain efficiency of this transistor?

    The drain efficiency is typically up to 35%.

  5. Is the BLF7G20LS-250P,118 internally matched?

    Yes, it is internally matched for ease of use.

  6. Does the BLF7G20LS-250P,118 have built-in ESD protection?

    Yes, it includes integrated ESD protection.

  7. What are the primary applications of the BLF7G20LS-250P,118?

    The primary applications include RF power amplifiers for W-CDMA base stations and multicarrier applications.

  8. Is the BLF7G20LS-250P,118 RoHS compliant?

    Yes, it is compliant with the RoHS Directive 2002/95/EC.

  9. What is the current status of the BLF7G20LS-250P,118?

    This product has been discontinued.

  10. Where can I find substitutes or alternative package types for the BLF7G20LS-250P,118?

    You can find substitutes or alternative package types on websites like DigiKey or by contacting the manufacturer for recommendations.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:1.81GHz ~ 1.88GHz
Gain:18dB
Voltage - Test:28 V
Current Rating (Amps):65A
Noise Figure:- 
Current - Test:1.9 A
Power - Output:70W
Voltage - Rated:65 V
Package / Case:SOT-539B
Supplier Device Package:SOT539B
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Same Series
BLF7G20L-250P,112
BLF7G20L-250P,112
RF FET LDMOS 65V 18DB SOT539A
BLF7G20L-250P,118
BLF7G20L-250P,118
RF FET LDMOS 65V 18DB SOT539A
BLF7G20LS-250P,112
BLF7G20LS-250P,112
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Similar Products

Part Number BLF7G20LS-250P,118 BLF7G22LS-250P,118 BLF7G20L-250P,118 BLF7G20LS-250P,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Obsolete Obsolete Obsolete Obsolete
Transistor Type LDMOS (Dual), Common Source LDMOS (Dual), Common Source LDMOS (Dual), Common Source LDMOS (Dual), Common Source
Frequency 1.81GHz ~ 1.88GHz 2.11GHz ~ 2.17GHz 1.81GHz ~ 1.88GHz 1.81GHz ~ 1.88GHz
Gain 18dB 18.5dB 18dB 18dB
Voltage - Test 28 V 28 V 28 V 28 V
Current Rating (Amps) 65A 65A 65A 65A
Noise Figure - - - -
Current - Test 1.9 A 1.9 A 1.9 A 1.9 A
Power - Output 70W 70W 70W 70W
Voltage - Rated 65 V 65 V 65 V 65 V
Package / Case SOT-539B SOT-539B SOT-539A SOT-539B
Supplier Device Package SOT539B SOT539B SOT539A SOT539B

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