Overview
The BLF7G20LS-250P,118 is a 250 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. for use in RF power amplifiers, particularly in base station applications. Although this product has been discontinued, it remains relevant for understanding high-performance RF components. The transistor operates within the frequency range of 1805 MHz to 1880 MHz, making it suitable for W-CDMA base stations and multicarrier applications.
Key Specifications
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| f range | frequency range | - | 1805 | - | 1880 | MHz |
| P L(3dB) | nominal output power at 3 dB gain compression | Test signal: 2-c W-CDMA | - | 250 | - | W |
| G p | power gain | P L(AV) = 70 W; V DS = 28 V | 16 | 18 | - | dB |
| RL in | input return loss | P L(AV) = 70 W; V DS = 28 V; I Dq = 1900 mA | -12 | - | - | dB |
| η D | drain efficiency | P L(AV) = 70 W; V DS = 28 V; 1805 MHz ≤ f ≤ 1880 MHz; I Dq = 1900 mA | 30 | 35 | - | % |
| P L(AV) | average output power | - | - | 70 | - | W |
| ACPR | adjacent channel power ratio | P L(AV) = 70 W; V DS = 28 V; 1805 MHz ≤ f ≤ 1880 MHz; I Dq = 1900 mA | -29.5 | -24.5 | - | dBc |
Key Features
- Excellent Ruggedness: The BLF7G20LS-250P,118 is designed to withstand harsh operating conditions.
- High Efficiency: It offers high drain efficiency, typically up to 35%, ensuring efficient power use.
- Low Thermal Resistance: The transistor features low Rth, providing excellent thermal stability.
- Broadband Operation: Designed for operation within the 1805 MHz to 1880 MHz frequency range.
- Lower Output Capacitance: Optimized for improved performance in Doherty applications.
- Low Memory Effects: Provides excellent pre-distortability due to low memory effects.
- Internally Matched: Simplifies the design process by being internally matched.
- Integrated ESD Protection: Includes built-in ESD protection for enhanced reliability.
- RoHS Compliance: Compliant with the Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC.
Applications
- RF Power Amplifiers for W-CDMA Base Stations: Ideal for use in base station applications requiring high power and efficiency.
- Multicarrier Applications: Suitable for multicarrier operations within the 1805 MHz to 1880 MHz frequency range.
Q & A
- What is the frequency range of the BLF7G20LS-250P,118?
The frequency range is from 1805 MHz to 1880 MHz.
- What is the nominal output power at 3 dB gain compression for this transistor?
The nominal output power at 3 dB gain compression is 250 W.
- What is the typical power gain of the BLF7G20LS-250P,118?
The typical power gain is 18 dB.
- What is the drain efficiency of this transistor?
The drain efficiency is typically up to 35%.
- Is the BLF7G20LS-250P,118 internally matched?
Yes, it is internally matched for ease of use.
- Does the BLF7G20LS-250P,118 have built-in ESD protection?
Yes, it includes integrated ESD protection.
- What are the primary applications of the BLF7G20LS-250P,118?
The primary applications include RF power amplifiers for W-CDMA base stations and multicarrier applications.
- Is the BLF7G20LS-250P,118 RoHS compliant?
Yes, it is compliant with the RoHS Directive 2002/95/EC.
- What is the current status of the BLF7G20LS-250P,118?
This product has been discontinued.
- Where can I find substitutes or alternative package types for the BLF7G20LS-250P,118?
You can find substitutes or alternative package types on websites like DigiKey or by contacting the manufacturer for recommendations.
