BLF7G20LS-250P,112
  • Share:

Ampleon USA Inc. BLF7G20LS-250P,112

Manufacturer No:
BLF7G20LS-250P,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 65V 18DB SOT539B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF7G20LS-250P,112 is a high-power LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor manufactured by Ampleon USA Inc. This device is designed for RF power amplifier applications, particularly in the frequency range of 1805 MHz to 1880 MHz, which is commonly used in W-CDMA base stations and other wireless infrastructure. The transistor is known for its excellent ruggedness, high efficiency, and low thermal resistance, ensuring reliable and stable performance.

Key Specifications

Parameter Value Unit
Manufacturer Ampleon USA Inc.
Part Number BLF7G20LS-250P,112
Frequency Range 1805 MHz - 1880 MHz MHz
Output Power (PL(3dB)) 250 W W
Power Gain (Gp) 18 dB dB
Supply Voltage (VDS) 28 V V
Drain Current (IDq) 1900 mA mA
Drain Efficiency (ηD) 35 % %
Package SOT539B
Process LDMOS (Dual), Common Source

Key Features

  • Excellent Ruggedness: Designed to withstand harsh operating conditions.
  • High Efficiency: Offers high drain efficiency, typically 35%, ensuring minimal power loss.
  • Low Thermal Resistance: Provides excellent thermal stability due to low Rth.
  • Broadband Operation: Operates effectively in the frequency range of 1805 MHz to 1880 MHz.
  • Lower Output Capacitance: Improves performance in Doherty applications.
  • Low Memory Effects: Ensures excellent pre-distortability.
  • Internally Matched: Simplifies the design process for ease of use.
  • Integrated ESD Protection: Enhances reliability by protecting against electrostatic discharge.
  • RoHS Compliant: Meets the Restriction of Hazardous Substances Directive 2002/95/EC.

Applications

  • RF Power Amplifiers for W-CDMA Base Stations: Ideal for amplifying RF signals in wireless communication systems.
  • Multicarrier Applications: Suitable for use in the 1805 MHz to 1880 MHz frequency range, supporting multiple carrier signals.

Q & A

  1. What is the frequency range of the BLF7G20LS-250P,112 transistor?

    The frequency range is from 1805 MHz to 1880 MHz.

  2. What is the output power of the BLF7G20LS-250P,112 transistor?

    The nominal output power at 3 dB gain compression is 250 W.

  3. What is the supply voltage for the BLF7G20LS-250P,112 transistor?

    The supply voltage (VDS) is 28 V.

  4. What is the typical drain efficiency of the BLF7G20LS-250P,112 transistor?

    The typical drain efficiency is 35%.

  5. What package type is used for the BLF7G20LS-250P,112 transistor?

    The package type is SOT539B.

  6. Is the BLF7G20LS-250P,112 transistor RoHS compliant?

    Yes, it is compliant with the Restriction of Hazardous Substances Directive 2002/95/EC.

  7. What are the key features of the BLF7G20LS-250P,112 transistor?

    Key features include excellent ruggedness, high efficiency, low thermal resistance, and lower output capacitance.

  8. What are the typical applications of the BLF7G20LS-250P,112 transistor?

    Typical applications include RF power amplifiers for W-CDMA base stations and multicarrier applications.

  9. Does the BLF7G20LS-250P,112 transistor have integrated ESD protection?

    Yes, it has integrated ESD protection.

  10. Is the BLF7G20LS-250P,112 transistor internally matched?

    Yes, it is internally matched for ease of use.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:1.81GHz ~ 1.88GHz
Gain:18dB
Voltage - Test:28 V
Current Rating (Amps):65A
Noise Figure:- 
Current - Test:1.9 A
Power - Output:70W
Voltage - Rated:65 V
Package / Case:SOT-539B
Supplier Device Package:SOT539B
0 Remaining View Similar

In Stock

-
594

Please send RFQ , we will respond immediately.

Same Series
BLF7G20L-250P,112
BLF7G20L-250P,112
RF FET LDMOS 65V 18DB SOT539A
BLF7G20L-250P,118
BLF7G20L-250P,118
RF FET LDMOS 65V 18DB SOT539A
BLF7G20LS-250P,112
BLF7G20LS-250P,112
RF FET LDMOS 65V 18DB SOT539B

Similar Products

Part Number BLF7G20LS-250P,112 BLF7G22LS-250P,112 BLF7G20LS-250P,118 BLF7G20L-250P,112
Manufacturer Ampleon USA Inc. NXP USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Obsolete Active Obsolete Obsolete
Transistor Type LDMOS (Dual), Common Source LDMOS (Dual), Common Source LDMOS (Dual), Common Source LDMOS (Dual), Common Source
Frequency 1.81GHz ~ 1.88GHz 2.11GHz ~ 2.17GHz 1.81GHz ~ 1.88GHz 1.81GHz ~ 1.88GHz
Gain 18dB 18.5dB 18dB 18dB
Voltage - Test 28 V 28 V 28 V 28 V
Current Rating (Amps) 65A 2.8µA 65A 65A
Noise Figure - - - -
Current - Test 1.9 A 1.9 A 1.9 A 1.9 A
Power - Output 70W 250W 70W 70W
Voltage - Rated 65 V 65 V 65 V 65 V
Package / Case SOT-539B SOT-539B SOT-539B SOT-539A
Supplier Device Package SOT539B SOT539B SOT539B SOT539A

Related Product By Categories

MMRF5014HR5
MMRF5014HR5
NXP USA Inc.
FET RF 125V 2.5GHZ NI360
PD55003TR-E
PD55003TR-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
BLF7G10LS-250,118
BLF7G10LS-250,118
Ampleon USA Inc.
RF FET LDMOS 65V 19.5DB SOT502B
MRFE6VP5300NR1
MRFE6VP5300NR1
NXP USA Inc.
FET RF 2CH 133V 230MHZ TO-270
PD55015TR-E
PD55015TR-E
STMicroelectronics
TRANS RF N-CH FET POWERSO-10RF
BF861A,215
BF861A,215
NXP USA Inc.
JFET N-CH 25V 6.5MA SOT23
BLF245,112
BLF245,112
Ampleon USA Inc.
RF FET NCHA 65V 15.5DB SOT123A
BLF3G21-6,135
BLF3G21-6,135
Ampleon USA Inc.
RF FET LDMOS 65V 15.5DB SOT538A
BF909,235
BF909,235
NXP USA Inc.
MOSFET N-CH 7V 40MA SOT143
BF1212,215
BF1212,215
NXP USA Inc.
MOSFET N-CH DUAL GATE 6V SOT143B
BLF6G22-45,135
BLF6G22-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT608A
MMBF4416
MMBF4416
onsemi
RF MOSFET N-CH JFET 15V SOT23-3

Related Product By Brand

BLF881S,112
BLF881S,112
Ampleon USA Inc.
RF MOSFET LDMOS 50V LDMOST
CLF1G0035-50
CLF1G0035-50
Ampleon USA Inc.
CLF1G0035-50 - 50W BROADBAND RF
BLF871S,112
BLF871S,112
Ampleon USA Inc.
RF FET LDMOS 89V 19DB SOT467B
BLF881,112
BLF881,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT467C
BLF184XRSU
BLF184XRSU
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214B
BLF8G20LS-220J
BLF8G20LS-220J
Ampleon USA Inc.
RF FET LDMOS 65V 18.9DB SOT502B
BLF245,112
BLF245,112
Ampleon USA Inc.
RF FET NCHA 65V 15.5DB SOT123A
BLF3G21-6,135
BLF3G21-6,135
Ampleon USA Inc.
RF FET LDMOS 65V 15.5DB SOT538A
BLF888,112
BLF888,112
Ampleon USA Inc.
RF FET LDMOS 104V 19DB SOT979A
BLF878,112
BLF878,112
Ampleon USA Inc.
RF FET LDMOS 89V 21DB SOT979A
BLF278/01,112
BLF278/01,112
Ampleon USA Inc.
RF FET 2 NC 125V 22DB SOT262A1
BLF7G21LS-160P,112
BLF7G21LS-160P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121B