Overview
The BLF7G20LS-250P,112 is a high-power LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor manufactured by Ampleon USA Inc. This device is designed for RF power amplifier applications, particularly in the frequency range of 1805 MHz to 1880 MHz, which is commonly used in W-CDMA base stations and other wireless infrastructure. The transistor is known for its excellent ruggedness, high efficiency, and low thermal resistance, ensuring reliable and stable performance.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Manufacturer | Ampleon USA Inc. | |
| Part Number | BLF7G20LS-250P,112 | |
| Frequency Range | 1805 MHz - 1880 MHz | MHz |
| Output Power (PL(3dB)) | 250 W | W |
| Power Gain (Gp) | 18 dB | dB |
| Supply Voltage (VDS) | 28 V | V |
| Drain Current (IDq) | 1900 mA | mA |
| Drain Efficiency (ηD) | 35 % | % |
| Package | SOT539B | |
| Process | LDMOS (Dual), Common Source |
Key Features
- Excellent Ruggedness: Designed to withstand harsh operating conditions.
- High Efficiency: Offers high drain efficiency, typically 35%, ensuring minimal power loss.
- Low Thermal Resistance: Provides excellent thermal stability due to low Rth.
- Broadband Operation: Operates effectively in the frequency range of 1805 MHz to 1880 MHz.
- Lower Output Capacitance: Improves performance in Doherty applications.
- Low Memory Effects: Ensures excellent pre-distortability.
- Internally Matched: Simplifies the design process for ease of use.
- Integrated ESD Protection: Enhances reliability by protecting against electrostatic discharge.
- RoHS Compliant: Meets the Restriction of Hazardous Substances Directive 2002/95/EC.
Applications
- RF Power Amplifiers for W-CDMA Base Stations: Ideal for amplifying RF signals in wireless communication systems.
- Multicarrier Applications: Suitable for use in the 1805 MHz to 1880 MHz frequency range, supporting multiple carrier signals.
Q & A
- What is the frequency range of the BLF7G20LS-250P,112 transistor?
The frequency range is from 1805 MHz to 1880 MHz.
- What is the output power of the BLF7G20LS-250P,112 transistor?
The nominal output power at 3 dB gain compression is 250 W.
- What is the supply voltage for the BLF7G20LS-250P,112 transistor?
The supply voltage (VDS) is 28 V.
- What is the typical drain efficiency of the BLF7G20LS-250P,112 transistor?
The typical drain efficiency is 35%.
- What package type is used for the BLF7G20LS-250P,112 transistor?
The package type is SOT539B.
- Is the BLF7G20LS-250P,112 transistor RoHS compliant?
Yes, it is compliant with the Restriction of Hazardous Substances Directive 2002/95/EC.
- What are the key features of the BLF7G20LS-250P,112 transistor?
Key features include excellent ruggedness, high efficiency, low thermal resistance, and lower output capacitance.
- What are the typical applications of the BLF7G20LS-250P,112 transistor?
Typical applications include RF power amplifiers for W-CDMA base stations and multicarrier applications.
- Does the BLF7G20LS-250P,112 transistor have integrated ESD protection?
Yes, it has integrated ESD protection.
- Is the BLF7G20LS-250P,112 transistor internally matched?
Yes, it is internally matched for ease of use.
