Overview
The BLF6G10LS-135RN,11 is a high-power RF transistor manufactured by Ampleon USA Inc. This device is designed for use in RF power amplifiers, particularly in base station applications. It operates within the frequency range of 700 MHz to 1000 MHz, making it suitable for various wireless communication standards such as GSM, GSM EDGE, W-CDMA, and CDMA. The transistor is built using LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology, which offers high efficiency, ruggedness, and excellent thermal stability.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Frequency Range | 0.87 GHz to 0.89 GHz (typical operation), 700 MHz to 1000 MHz (broadband operation) | GHz |
| Output Power | 135 W (at 3 dB gain compression) | W |
| Power Gain | 21 dB | dB |
| Drain Efficiency | 28% | % |
| Supply Voltage | 28 V | V |
| Current Rating | 950 mA (test current) | mA |
| Package | SOT-502B | |
| Technology | LDMOS |
Key Features
- Easy power control and integrated ESD protection for enhanced reliability.
- High efficiency and excellent thermal stability.
- Internally matched for ease of use.
- Compliant with Directive 2002/95/EC regarding RoHS.
- Designed for broadband operation across 700 MHz to 1000 MHz frequency range.
- Enhanced ruggedness to withstand operational stresses.
Applications
- RF power amplifiers for GSM, GSM EDGE, W-CDMA, and CDMA base stations.
- Multi-carrier applications in the 700 MHz to 1000 MHz frequency range.
Q & A
- Q: What is the frequency range of the BLF6G10LS-135RN,11?
A: The BLF6G10LS-135RN,11 operates within the frequency range of 0.87 GHz to 0.89 GHz for typical operation and 700 MHz to 1000 MHz for broadband operation. - Q: What is the output power of the BLF6G10LS-135RN,11?
A: The output power is 135 W at 3 dB gain compression. - Q: What technology is used in the BLF6G10LS-135RN,11?
A: The BLF6G10LS-135RN,11 is built using LDMOS technology. - Q: What are the key features of the BLF6G10LS-135RN,11?
A: Key features include easy power control, integrated ESD protection, high efficiency, excellent thermal stability, and internal matching for ease of use. - Q: What applications is the BLF6G10LS-135RN,11 suitable for?
A: It is suitable for RF power amplifiers in GSM, GSM EDGE, W-CDMA, and CDMA base stations, as well as multi-carrier applications in the 700 MHz to 1000 MHz frequency range. - Q: Is the BLF6G10LS-135RN,11 RoHS compliant?
A: Yes, the BLF6G10LS-135RN,11 is compliant with Directive 2002/95/EC regarding RoHS. - Q: What is the package type of the BLF6G10LS-135RN,11?
A: The package type is SOT-502B. - Q: How can I order the BLF6G10LS-135RN,11?
A: You can order the BLF6G10LS-135RN,11 by selecting the 'Add to Cart' button on the product listing page and proceeding to the checkout to enter your payment and shipping information. - Q: What is the warranty period for the BLF6G10LS-135RN,11?
A: The warranty period is typically 1 year, covering any defects in materials and workmanship under normal use. - Q: How can I ensure the authenticity of the BLF6G10LS-135RN,11?
A: Suppliers must pass rigorous qualification reviews, and the products are verified and tested to ensure authenticity and quality.
