Overview
The BLF6G22LS-40P,118 is a high-performance LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. for base station applications. This transistor operates within the frequency ranges of 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz, making it suitable for various wireless communication systems. Although this product has been discontinued, it remains an important reference for understanding the capabilities and design of modern LDMOS transistors.
Key Specifications
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| f range | frequency range | - | 2110 | - | 2170 | MHz |
| P L(3dB) | nominal output power at 3 dB gain compression | Test signal: 2-c W-CDMA | - | 40 | - | W |
| G p | power gain | P L(AV) = 13.5 W; V DS = 28 V; I Dq = 410 mA | 17.8 | 19 | - | dB |
| RL in | input return loss | P L(AV) = 13.5 W; V DS = 28 V; I Dq = 410 mA | -15 | -9 | - | dB |
| η D | drain efficiency | P L(AV) = 13.5 W; V DS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; I Dq = 410 mA | 26.5 | 30 | - | % |
| P L(AV) | average output power | - | - | 13.5 | - | W |
| ACPR 5M | adjacent channel power ratio (5 MHz) | P L(AV) = 13.5 W; V DS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; I Dq = 410 mA | -30 | -27 | - | dBc |
| ACPR 10M | adjacent channel power ratio (10 MHz) | P L(AV) = 13.5 W; V DS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; I Dq = 410 mA | -39 | -36 | - | dBc |
Key Features
- Excellent ruggedness and high efficiency.
- Low Rth providing excellent thermal stability.
- Lower output capacitance for improved performance in Doherty applications.
- Designed for low memory effects providing excellent pre-distortability.
- Integrated ESD protection.
- Internally matched for ease of use.
- Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances.
Applications
- RF power amplifiers for base stations.
- Multi carrier applications in the 2110 MHz to 2170 MHz frequency band.
- RF driver amplifier in the 1805 MHz to 1880 MHz frequency band.
Q & A
- What is the frequency range of the BLF6G22LS-40P transistor?
The BLF6G22LS-40P operates within the frequency ranges of 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz. - What is the nominal output power at 3 dB gain compression for this transistor?
The nominal output power at 3 dB gain compression is 40 W. - What are the key features of the BLF6G22LS-40P transistor?
The key features include excellent ruggedness, high efficiency, low Rth, lower output capacitance, low memory effects, integrated ESD protection, and internal matching. - What are the typical applications of the BLF6G22LS-40P transistor?
The typical applications include RF power amplifiers for base stations, multi carrier applications, and RF driver amplifiers. - Is the BLF6G22LS-40P transistor still available for purchase?
No, the BLF6G22LS-40P has been discontinued. The recommended replacement is the BLM8D1822S-50PBG. - What is the package type for the BLF6G22LS-40P transistor?
The package type is CDFM4 (SOT1121B). - What is the average output power of the BLF6G22LS-40P transistor?
The average output power is 13.5 W. - What are the adjacent channel power ratios for the BLF6G22LS-40P transistor?
The adjacent channel power ratios are -30 dBc for 5 MHz and -39 dBc for 10 MHz. - Is the BLF6G22LS-40P compliant with any environmental directives?
Yes, it is compliant to Directive 2002/95/EC regarding the restriction of hazardous substances. - What is the power gain of the BLF6G22LS-40P transistor?
The power gain is between 17.8 dB and 19 dB.
