Overview
The BLF6G22LS-130,118 is a 130 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. for use in base station applications. This transistor operates within the frequency range of 2000 MHz to 2200 MHz, making it suitable for W-CDMA base stations and multicarrier applications. Despite being discontinued, it remains a significant component in the realm of RF power amplifiers due to its robust features and performance.
Key Specifications
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| f range | frequency range | 2000 | 2200 | MHz | ||
| P L(3dB) | nominal output power at 3 dB gain compression | Test signal: 2-c W-CDMA | 130 | W | ||
| G p | power gain | P L(AV) = 30 W; V DS = 28 V | 16 | 17 | dB | |
| RL in | input return loss | P L(AV) = 30 W; V DS = 28 V; I Dq = 1100 mA | -9 | -6 | dB | |
| η D | drain efficiency | P L(AV) = 30 W; V DS = 28 V; I Dq = 1100 mA | 25.5 | 28.5 | % | |
| P L(AV) | average output power | 30 | W | |||
| IMD3 | third-order intermodulation distortion | P L(AV) = 30 W; V DS = 28 V; I Dq = 1100 mA | -37 | -34.5 | dBc | |
| ACPR | adjacent channel power ratio | P L(AV) = 30 W; V DS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; I Dq = 1100 mA | -40 | -38 | dBc |
Key Features
- Excellent ruggedness
- Integrated ESD protection
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (2000 MHz to 2200 MHz)
- Internally matched for ease of use
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
Applications
- RF power amplifiers for W-CDMA base stations
- Multicarrier applications in the 2000 MHz to 2200 MHz frequency range
Q & A
- What is the frequency range of the BLF6G22LS-130,118 transistor?
The BLF6G22LS-130,118 operates within the frequency range of 2000 MHz to 2200 MHz. - What is the nominal output power of the BLF6G22LS-130,118 at 3 dB gain compression?
The nominal output power is 130 W. - What are the key features of the BLF6G22LS-130,118?
The key features include excellent ruggedness, integrated ESD protection, high efficiency, excellent thermal stability, and internal matching for ease of use. - What are the typical applications of the BLF6G22LS-130,118?
The transistor is typically used in RF power amplifiers for W-CDMA base stations and multicarrier applications. - Is the BLF6G22LS-130,118 compliant with any environmental directives?
Yes, it is compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances. - What is the average output power of the BLF6G22LS-130,118?
The average output power is 30 W. - What is the drain efficiency of the BLF6G22LS-130,118?
The drain efficiency ranges from 25.5% to 28.5%. - What is the input return loss of the BLF6G22LS-130,118?
The input return loss is between -9 dB and -6 dB. - Is the BLF6G22LS-130,118 still available for purchase?
No, the BLF6G22LS-130,118 has been discontinued. - What is the power gain of the BLF6G22LS-130,118?
The power gain is approximately 17 dB.
