Overview
The BLF6G38S-25,118 is a 25 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. for use in base station applications, particularly in the frequency range of 3400 MHz to 3800 MHz. This transistor is optimized for WiMAX and other broadband wireless infrastructure needs, offering high efficiency, excellent ruggedness, and easy power control. Although the product has been discontinued, it remains relevant for existing systems and maintenance purposes.
Key Specifications
Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|
f range | frequency range | 3400 | 3800 | MHz | ||
P L(3dB) | nominal output power at 3 dB gain compression | Test signal: NCDMA/IS95 | 25 | W | ||
G p | power gain | P L(AV) = 4.5 W; V DS = 28 V | 12.5 | 15 | dB | |
RL in | input return loss | P L(AV) = 4.5 W; V DS = 28 V; I Dq = 225 mA | -10 | dB | ||
η D | drain efficiency | V DS = 28 V; 3400 MHz < f < 3800 MHz; I Dq = 225 mA | 22 | 24 | % | |
P L(AV) | average output power | 4.5 | W | |||
ACPR 1980k | adjacent channel power ratio (1980 kHz) | P L(AV) = 4.5 W; V DS = 28 V; 3400 MHz < f < 3800 MHz; I Dq = 225 mA | -61 | -56 | dBc | |
ACPR 885k | adjacent channel power ratio (885 kHz) | P L(AV) = 4.5 W; V DS = 28 V; 3400 MHz < f < 3800 MHz; I Dq = 225 mA | -45 | -40 | dBc |
Key Features
- Easy power control
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (3400 MHz to 3800 MHz)
- Internally matched for ease of use
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
Applications
- RF power amplifiers for base stations
- Multicarrier applications in the 3400 MHz to 3800 MHz frequency range
Q & A
- What is the frequency range of the BLF6G38S-25,118 transistor?
The BLF6G38S-25,118 operates in the frequency range of 3400 MHz to 3800 MHz. - What is the nominal output power of the BLF6G38S-25,118 at 3 dB gain compression?
The nominal output power is 25 W. - What is the typical power gain of the BLF6G38S-25,118?
The typical power gain is 15 dB. - What is the drain efficiency of the BLF6G38S-25,118?
The drain efficiency is typically 24%. - Is the BLF6G38S-25,118 internally matched?
Yes, the transistor is internally matched for ease of use. - What are the primary applications of the BLF6G38S-25,118?
The primary applications include RF power amplifiers for base stations and multicarrier applications in the specified frequency range. - Does the BLF6G38S-25,118 have integrated ESD protection?
Yes, it has integrated ESD protection. - What is the package type of the BLF6G38S-25,118?
The package type is CDFM2 (SOT608B). - Is the BLF6G38S-25,118 compliant with any specific directives?
Yes, it is compliant with Directive 2002/95/EC regarding Restriction of Hazardous Substances. - What is the current status of the BLF6G38S-25,118 product?
The product has been discontinued.