BLF6G38S-25,118
  • Share:

Ampleon USA Inc. BLF6G38S-25,118

Manufacturer No:
BLF6G38S-25,118
Manufacturer:
Ampleon USA Inc.
Package:
Tape & Reel (TR)
Description:
RF FET LDMOS 65V 15DB SOT608B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF6G38S-25,118 is a 25 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. for use in base station applications, particularly in the frequency range of 3400 MHz to 3800 MHz. This transistor is optimized for WiMAX and other broadband wireless infrastructure needs, offering high efficiency, excellent ruggedness, and easy power control. Although the product has been discontinued, it remains relevant for existing systems and maintenance purposes.

Key Specifications

SymbolParameterConditionsMinTyp/NomMaxUnit
f rangefrequency range34003800MHz
P L(3dB)nominal output power at 3 dB gain compressionTest signal: NCDMA/IS9525W
G ppower gainP L(AV) = 4.5 W; V DS = 28 V12.515dB
RL ininput return lossP L(AV) = 4.5 W; V DS = 28 V; I Dq = 225 mA-10dB
η Ddrain efficiencyV DS = 28 V; 3400 MHz < f < 3800 MHz; I Dq = 225 mA2224%
P L(AV)average output power4.5W
ACPR 1980kadjacent channel power ratio (1980 kHz)P L(AV) = 4.5 W; V DS = 28 V; 3400 MHz < f < 3800 MHz; I Dq = 225 mA-61-56dBc
ACPR 885kadjacent channel power ratio (885 kHz)P L(AV) = 4.5 W; V DS = 28 V; 3400 MHz < f < 3800 MHz; I Dq = 225 mA-45-40dBc

Key Features

  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (3400 MHz to 3800 MHz)
  • Internally matched for ease of use
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

Applications

  • RF power amplifiers for base stations
  • Multicarrier applications in the 3400 MHz to 3800 MHz frequency range

Q & A

  1. What is the frequency range of the BLF6G38S-25,118 transistor?
    The BLF6G38S-25,118 operates in the frequency range of 3400 MHz to 3800 MHz.
  2. What is the nominal output power of the BLF6G38S-25,118 at 3 dB gain compression?
    The nominal output power is 25 W.
  3. What is the typical power gain of the BLF6G38S-25,118?
    The typical power gain is 15 dB.
  4. What is the drain efficiency of the BLF6G38S-25,118?
    The drain efficiency is typically 24%.
  5. Is the BLF6G38S-25,118 internally matched?
    Yes, the transistor is internally matched for ease of use.
  6. What are the primary applications of the BLF6G38S-25,118?
    The primary applications include RF power amplifiers for base stations and multicarrier applications in the specified frequency range.
  7. Does the BLF6G38S-25,118 have integrated ESD protection?
    Yes, it has integrated ESD protection.
  8. What is the package type of the BLF6G38S-25,118?
    The package type is CDFM2 (SOT608B).
  9. Is the BLF6G38S-25,118 compliant with any specific directives?
    Yes, it is compliant with Directive 2002/95/EC regarding Restriction of Hazardous Substances.
  10. What is the current status of the BLF6G38S-25,118 product?
    The product has been discontinued.

Product Attributes

Transistor Type:LDMOS
Frequency:3.4GHz ~ 3.6GHz
Gain:15dB
Voltage - Test:28 V
Current Rating (Amps):8.2A
Noise Figure:- 
Current - Test:225 mA
Power - Output:4.5W
Voltage - Rated:65 V
Package / Case:SOT-608B
Supplier Device Package:CDFM2
0 Remaining View Similar

In Stock

-
263

Please send RFQ , we will respond immediately.

Same Series
BLF6G38S-25,112
BLF6G38S-25,112
RF FET LDMOS 65V 15DB SOT608B
BLF6G38S-25,118
BLF6G38S-25,118
RF FET LDMOS 65V 15DB SOT608B

Similar Products

Part Number BLF6G38S-25,118 BLF6G38S-25,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc.
Product Status Obsolete Obsolete
Transistor Type LDMOS LDMOS
Frequency 3.4GHz ~ 3.6GHz 3.4GHz ~ 3.6GHz
Gain 15dB 15dB
Voltage - Test 28 V 28 V
Current Rating (Amps) 8.2A 8.2A
Noise Figure - -
Current - Test 225 mA 225 mA
Power - Output 4.5W 4.5W
Voltage - Rated 65 V 65 V
Package / Case SOT-608B SOT-608B
Supplier Device Package CDFM2 CDFM2

Related Product By Categories

BLF574,112
BLF574,112
Ampleon USA Inc.
RF FET LDMOS 110V 26.5DB SOT539A
MW7IC2020NT1
MW7IC2020NT1
NXP USA Inc.
RF MOSFET LDMOS 28V 24PQFN
CLF1G0035-100
CLF1G0035-100
Rochester Electronics, LLC
CLF1G0035-100 - 100W BROADBAND R
BLF6G10LS-135R,112
BLF6G10LS-135R,112
NXP USA Inc.
RF TRANSISTOR
BLF7G27LS-140,112
BLF7G27LS-140,112
NXP USA Inc.
RF PFET, 1-ELEMENT, S BAND, SILI
BLF8G10LS-160,118
BLF8G10LS-160,118
Ampleon USA Inc.
RF FET LDMOS 65V 19.7DB SOT502B
PD55025-E
PD55025-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO10
BF909WR,135
BF909WR,135
NXP USA Inc.
MOSFET N-CH 7V 40MA SOT343
BLF245B,112
BLF245B,112
Ampleon USA Inc.
RF FET 2 NC 65V 18DB SOT279A
BLF6G38LS-50,118
BLF6G38LS-50,118
Ampleon USA Inc.
RF FET LDMOS 65V 14DB SOT502B
MMBF4416LT1G
MMBF4416LT1G
onsemi
JFET N-CH 30V 15MA SOT23
BLF6G27LS-40P,118
BLF6G27LS-40P,118
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B

Related Product By Brand

BLF183XRU
BLF183XRU
Ampleon USA Inc.
RF FET LDMOS 135V 28DB SOT1121A
BLF888A,112
BLF888A,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539A
BLF178XR,112
BLF178XR,112
Ampleon USA Inc.
RF MOSFET LDMOS DL 50V SOT539A
CLF1G0060-10
CLF1G0060-10
Ampleon USA Inc.
CLF1G0060-10 - 10W BROADBAND RF
CLF1G0035-100PU
CLF1G0035-100PU
Ampleon USA Inc.
RF MOSFET HEMT 50V LDMOST
BLF6G10-45,135
BLF6G10-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 22.5DB SOT608A
BLF6G21-10G,112
BLF6G21-10G,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT538A
BLF6G27-10G,118
BLF6G27-10G,118
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C
BLF878,112
BLF878,112
Ampleon USA Inc.
RF FET LDMOS 89V 21DB SOT979A
BLF6G20LS-110,118
BLF6G20LS-110,118
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT502B
BLF8G22LS-160BV,11
BLF8G22LS-160BV,11
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1120B
BLF6G27-10GHJ
BLF6G27-10GHJ
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C