Overview
The BLF8G22LS-220U is a 220 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. for base station applications. This transistor operates within the frequency range of 2110 MHz to 2170 MHz, making it suitable for W-CDMA base stations and multi-carrier applications. Despite being discontinued, it remains a significant component in the realm of RF power amplifiers due to its robust performance and reliability features.
Key Specifications
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| f range | frequency range | - | 2110 | - | 2170 | MHz |
| P L(3dB) | nominal output power at 3 dB gain compression | Test signal: 2-c W-CDMA | - | 220 | - | W |
| G p | power gain | P L(AV) = 55 W; V DS = 28 V | 15.8 | 17 | - | dB |
| RL in | input return loss | P L(AV) = 55 W; V DS = 28 V; I Dq = 1620 mA | -12 | -6 | - | dB |
| η D | drain efficiency | P L(AV) = 55 W; V DS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; I Dq = 1620 mA | 28 | 33 | - | % |
| ACPR 5M | adjacent channel power ratio (5 MHz) | P L(AV) = 55 W; V DS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; I Dq = 1620 mA | -30 | -24 | - | dBc |
Key Features
- Excellent Ruggedness: The BLF8G22LS-220U is designed to withstand harsh operating conditions.
- High Efficiency: It offers high drain efficiency, typically ranging from 28% to 33%.
- Low Rth: Provides excellent thermal stability due to its low thermal resistance.
- Low Memory Effects: Designed for low memory effects, ensuring excellent pre-distortability.
- Internally Matched: Simplifies the design process by being internally matched.
- Integrated ESD Protection: Includes built-in ESD protection for enhanced reliability.
- RoHS Compliant: Compliant with Directive 2002/95/EC, regarding the Restriction of Hazardous Substances (RoHS).
Applications
The BLF8G22LS-220U is primarily used in RF power amplifiers for W-CDMA base stations and multi-carrier applications within the frequency range of 2110 MHz to 2170 MHz.
Q & A
- What is the frequency range of the BLF8G22LS-220U?
The frequency range is from 2110 MHz to 2170 MHz. - What is the nominal output power of the BLF8G22LS-220U?
The nominal output power at 3 dB gain compression is 220 W. - What are the key features of the BLF8G22LS-220U?
Key features include excellent ruggedness, high efficiency, low Rth, low memory effects, internally matched, integrated ESD protection, and RoHS compliance. - What are the typical applications of the BLF8G22LS-220U?
Typical applications include RF power amplifiers for W-CDMA base stations and multi-carrier applications. - Is the BLF8G22LS-220U still available for purchase?
No, the BLF8G22LS-220U has been discontinued. - What is the package type of the BLF8G22LS-220U?
The package type is SOT502B. - What is the drain efficiency of the BLF8G22LS-220U?
The drain efficiency typically ranges from 28% to 33%. - Does the BLF8G22LS-220U have built-in ESD protection?
Yes, it includes integrated ESD protection. - Is the BLF8G22LS-220U RoHS compliant?
Yes, it is compliant with Directive 2002/95/EC regarding the Restriction of Hazardous Substances (RoHS). - What is the power gain of the BLF8G22LS-220U?
The power gain is typically around 17 dB.
