SD2943W
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STMicroelectronics SD2943W

Manufacturer No:
SD2943W
Manufacturer:
STMicroelectronics
Package:
Tray
Description:
TRANS RF N-CH HF/VHF/UHF M177
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SD2943W is a gold metallized N-channel MOS field-effect RF power transistor produced by STMicroelectronics. It is designed for 50 V DC large signal applications up to 150 MHz, making it suitable for high-power radio frequency (RF) applications. The transistor offers enhanced power capability and thermal stability, making it ideal for Industrial, Scientific, and Medical (ISM) applications where reliability and ruggedness are critical.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VBRDSS) 130 V
Drain-Gate Voltage (VDGR) 130 V
Gate-Source Voltage (VGS) ±40 V
Drain Current (ID) 40 A
Power Dissipation (PDISS) 648 W
Maximum Operating Junction Temperature (TJ) +200 °C
Output Power (POUT) at 30 MHz 350 W (min.) W
Power Gain at 30 MHz 22 dB (min.) dB
Efficiency at 30 MHz 60% (min.) %
Junction-to-Case Thermal Resistance (RthJC) 0.27 °C/W

Key Features

  • High power capability with a minimum output power of 350 W at 30 MHz.
  • Low RDS(on) for reduced power losses.
  • Thermally enhanced packaging for lower junction temperatures.
  • Gold metallization for improved reliability and durability.
  • Excellent thermal stability.
  • Common source configuration.
  • 20% higher power saturation compared to the SD2933 model.

Applications

The SD2943W is primarily used in high-power RF applications, including:

  • Industrial, Scientific, and Medical (ISM) equipment.
  • RF amplifiers and transmitters.
  • High-frequency communication systems.
  • VHF/UHF radio systems.

Q & A

  1. What is the maximum drain-source voltage of the SD2943W?

    The maximum drain-source voltage (VBRDSS) is 130 V.

  2. What is the maximum operating junction temperature of the SD2943W?

    The maximum operating junction temperature (TJ) is +200 °C.

  3. What is the typical output power of the SD2943W at 30 MHz?

    The typical output power (POUT) at 30 MHz is 350 W (minimum).

  4. What is the power gain of the SD2943W at 30 MHz?

    The power gain at 30 MHz is 22 dB (minimum).

  5. What is the efficiency of the SD2943W at 30 MHz?

    The efficiency at 30 MHz is 60% (minimum).

  6. What type of metallization does the SD2943W use?

    The SD2943W uses gold metallization.

  7. What is the junction-to-case thermal resistance of the SD2943W?

    The junction-to-case thermal resistance (RthJC) is 0.27 °C/W.

  8. In what type of applications is the SD2943W commonly used?

    The SD2943W is commonly used in ISM equipment, RF amplifiers, high-frequency communication systems, and VHF/UHF radio systems.

  9. How does the SD2943W compare to the SD2933 in terms of power saturation?

    The SD2943W has a 20% higher power saturation compared to the SD2933.

  10. What is the package type of the SD2943W?

    The SD2943W is packaged in an M177 (.550 DIA 4L NHERM WFLG) package.

Product Attributes

Transistor Type:N-Channel
Frequency:30MHz
Gain:25dB
Voltage - Test:50 V
Current Rating (Amps):40A
Noise Figure:- 
Current - Test:250 mA
Power - Output:350W
Voltage - Rated:130 V
Package / Case:M177
Supplier Device Package:M177
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In Stock

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Similar Products

Part Number SD2943W SD2933W SD2942W
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
Transistor Type N-Channel N-Channel N-Channel
Frequency 30MHz 30MHz 175MHz
Gain 25dB 23.5dB 17dB
Voltage - Test 50 V 50 V 50 V
Current Rating (Amps) 40A 40A 40A
Noise Figure - - -
Current - Test 250 mA 250 mA 500 mA
Power - Output 350W 300W 350W
Voltage - Rated 130 V 125 V 130 V
Package / Case M177 M177 M244
Supplier Device Package M177 M177 M244

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