BF998E6327HTSA1
  • Share:

Infineon Technologies BF998E6327HTSA1

Manufacturer No:
BF998E6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 12V 200MA SOT-143
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BF998E6327HTSA1 is an RF MOSFET transistor produced by Infineon Technologies. This component is designed as an N-Channel MOSFET tetrode, suitable for various RF applications. Although the product is currently discontinued, it remains relevant for existing designs and maintenance of older systems. The transistor is known for its high S/C quality factor and is optimized for low-noise, gain-controlled input stages up to 1 GHz.

Key Specifications

ParameterValue
Drain Source Voltage (Vds)12 V
Continuous Drain Current (Id)30 mA
Power Dissipation (Pd)200 mW
Operating Temperature Max150°C
Channel TypeN Channel
Transistor Case StyleSOT-143
No. of Pins4 Pins
Transistor MountingSurface Mount
MSLMSL 1 - Unlimited
RoHS CompliantYes
SVHCNo SVHC (17-Jan-2023)

Key Features

  • Short-channel transistor with high S/C quality factor
  • Optimized for low-noise, gain-controlled input stages up to 1 GHz
  • Pb-free (RoHS compliant) package
  • Halogen-free

Applications

  • Set Top Box
  • TV
  • Car Radio

Q & A

  1. What is the drain source voltage of the BF998E6327HTSA1?
    The drain source voltage (Vds) is 12 V.
  2. What is the continuous drain current of this transistor?
    The continuous drain current (Id) is 30 mA.
  3. What is the maximum operating temperature of the BF998E6327HTSA1?
    The maximum operating temperature is 150°C.
  4. What type of channel does the BF998E6327HTSA1 have?
    The BF998E6327HTSA1 is an N-Channel MOSFET.
  5. What is the package type of the BF998E6327HTSA1?
    The package type is SOT-143.
  6. How many pins does the BF998E6327HTSA1 have?
    The transistor has 4 pins.
  7. Is the BF998E6327HTSA1 RoHS compliant?
    Yes, the BF998E6327HTSA1 is RoHS compliant.
  8. Does the BF998E6327HTSA1 contain SVHC?
    No, the BF998E6327HTSA1 does not contain SVHC as of 17-Jan-2023.
  9. What is the power dissipation of the BF998E6327HTSA1?
    The power dissipation (Pd) is 200 mW.
  10. What are some typical applications of the BF998E6327HTSA1?
    Typical applications include Set Top Box, TV, and Car Radio.

Product Attributes

Transistor Type:N-Channel
Frequency:45MHz
Gain:28dB
Voltage - Test:8 V
Current Rating (Amps):30mA
Noise Figure:2.8dB
Current - Test:10 mA
Power - Output:- 
Voltage - Rated:12 V
Package / Case:TO-253-4, TO-253AA
Supplier Device Package:PG-SOT-143-3D
0 Remaining View Similar

In Stock

$0.17
1,324

Please send RFQ , we will respond immediately.

Same Series
BF998RE6327HTSA1
BF998RE6327HTSA1
MOSFET N-CH RF 12V 30MA SOT-143

Similar Products

Part Number BF998E6327HTSA1 BF999E6327HTSA1 BF998RE6327HTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Last Time Buy Last Time Buy Obsolete
Transistor Type N-Channel N-Channel N-Channel
Frequency 45MHz 45MHz 45MHz
Gain 28dB 27dB 28dB
Voltage - Test 8 V 10 V 8 V
Current Rating (Amps) 30mA 30mA 30mA
Noise Figure 2.8dB 2.1dB 2.8dB
Current - Test 10 mA 10 mA 10 mA
Power - Output - - -
Voltage - Rated 12 V 20 V 12 V
Package / Case TO-253-4, TO-253AA TO-236-3, SC-59, SOT-23-3 SOT-143R
Supplier Device Package PG-SOT-143-3D PG-SOT23 PG-SOT-143R-3D

Related Product By Categories

BLF888A,112
BLF888A,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539A
BLF184XRGQ
BLF184XRGQ
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214C
AFT09S282NR3 REEL
AFT09S282NR3 REEL
Freescale Semiconductor
AFT09S282NR3 REEL
PD57018TR-E
PD57018TR-E
STMicroelectronics
TRANSISTOR RF POWERSO-10
BLF578,112
BLF578,112
Ampleon USA Inc.
RF FET LDMOS 110V 24DB SOT539A
SD2942W
SD2942W
STMicroelectronics
IC TRANS RF HF/VHF/UHF M244
BF1212,215
BF1212,215
NXP USA Inc.
MOSFET N-CH DUAL GATE 6V SOT143B
BLF6G27S-45,135
BLF6G27S-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608B
BLF6G38LS-50,112
BLF6G38LS-50,112
Ampleon USA Inc.
RF FET LDMOS 65V 14DB SOT502B
BLF6G22-45,135
BLF6G22-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT608A
BF1107,215
BF1107,215
NXP USA Inc.
MOSFET N-CH 3V 10MA SOT23
A2T18H455W23NR6
A2T18H455W23NR6
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO

Related Product By Brand

BAS4002LE6327
BAS4002LE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BC807-16WE6327
BC807-16WE6327
Infineon Technologies
TRANS PNP 45V 0.5A SOT23-3
BC848BW
BC848BW
Infineon Technologies
TRANS NPN 30V 0.1A SOT323
BCX5616H6327XTSA1
BCX5616H6327XTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT89
BC847BWE6327BTSA1
BC847BWE6327BTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT-323
BCP 69US E6327
BCP 69US E6327
Infineon Technologies
TRANS PNP 20V 1A TSOP6-6
BCX 55-16 E6327
BCX 55-16 E6327
Infineon Technologies
TRANS NPN 60V 1A SOT-89
BC 807-40W H6433
BC 807-40W H6433
Infineon Technologies
TRANS PNP 45V 0.5A SOT323
IKW50N60TA
IKW50N60TA
Infineon Technologies
IKW50N60 - AUTOMOTIVE IGBT DISCR
BTS500851TMAATMA1
BTS500851TMAATMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO220-7
AUIR3315STRL
AUIR3315STRL
Infineon Technologies
IC PWR DRIVER N-CHAN 1:1 D2PAK
TLF35584QVVS1XUMA2
TLF35584QVVS1XUMA2
Infineon Technologies
IC REG AUTO APPL 1OUT VQFN-48-31