PD55015STR-E
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STMicroelectronics PD55015STR-E

Manufacturer No:
PD55015STR-E
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
FET RF 40V 500MHZ PWRSO-10
Delivery:
Payment:
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Product Introduction

Overview

The PD55015STR-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor produced by STMicroelectronics. It is part of the LDMOS technology family and is designed for high gain and broad band commercial and industrial applications. This transistor operates at 12 V in common source mode at frequencies up to 1 GHz, offering excellent gain, linearity, and reliability. The device is housed in the PowerSO-10RF plastic package, which is the first JEDEC-approved, high power SMD package from ST, optimized for RF requirements and ease of assembly.

Key Specifications

Parameter Value Unit
Drain-source voltage (V(BR)DSS) 40 V
Gate-source voltage (VGS) ± 20 V
Drain current (ID) 7 A
Power dissipation (PDISS) @ TC = 70°C 79 W
Max. operating junction temperature (TJ) 165 °C
Storage temperature (TSTG) -65 to +150 °C
Junction-case thermal resistance (RthJC) 1.2 °C/W
Output power (POUT) @ 500 MHz, 12.5 V 15 W W
Power gain (GP) @ 500 MHz, 12.5 V 14 dB dB
Package PowerSO-10RF (straight lead)
RoHS Compliance Grade Ecopack2

Key Features

  • Excellent thermal stability
  • Common source configuration
  • High output power of 15 W with 14 dB gain at 500 MHz and 12.5 V
  • Superior linearity performance, ideal for car mobile radios
  • First true SMD plastic RF power package, PowerSO-10RF, optimized for RF requirements and ease of assembly
  • High reliability and JEDEC-approved

Applications

The PD55015STR-E is designed for high gain, broad band commercial and industrial applications. It is particularly suitable for car mobile radios due to its superior linearity performance. Other potential applications include various RF power amplification needs in communication systems and industrial equipment.

Q & A

  1. What is the PD55015STR-E?

    The PD55015STR-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor from STMicroelectronics.

  2. What is the operating voltage of the PD55015STR-E?

    The transistor operates at 12 V in common source mode.

  3. What is the maximum frequency range of the PD55015STR-E?

    The device operates at frequencies up to 1 GHz.

  4. What is the output power of the PD55015STR-E at 500 MHz and 12.5 V?

    The output power is 15 W with a gain of 14 dB.

  5. What package type is used for the PD55015STR-E?

    The device is housed in the PowerSO-10RF plastic package with straight leads.

  6. Is the PD55015STR-E RoHS compliant?
  7. What are the key features of the PowerSO-10RF package?

    The PowerSO-10RF package is the first JEDEC-approved, high power SMD package from ST, optimized for RF requirements and ease of assembly.

  8. What are the typical applications of the PD55015STR-E?

    The device is particularly suitable for car mobile radios and other RF power amplification needs in communication systems and industrial equipment.

  9. Where can I find mounting recommendations for the PD55015STR-E?

    Mouting recommendations are available in application note AN1294 on the STMicroelectronics website.

  10. What is the maximum operating junction temperature of the PD55015STR-E?

    The maximum operating junction temperature is 165°C.

Product Attributes

Transistor Type:LDMOS
Frequency:500MHz
Gain:14dB
Voltage - Test:12.5 V
Current Rating (Amps):5A
Noise Figure:- 
Current - Test:150 mA
Power - Output:15W
Voltage - Rated:40 V
Package / Case:PowerSO-10 Exposed Bottom Pad
Supplier Device Package:PowerSO-10RF (Straight Lead)
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Same Series
PD55015TR-E
PD55015TR-E
TRANS RF N-CH FET POWERSO-10RF
PD55015S-E
PD55015S-E
FET RF 40V 500MHZ PWRSO-10
PD55015STR-E
PD55015STR-E
FET RF 40V 500MHZ PWRSO-10

Similar Products

Part Number PD55015STR-E PD55015TR-E PD55035STR-E PD85015STR-E PD55025STR-E
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Not For New Designs Obsolete Obsolete
Transistor Type LDMOS LDMOS LDMOS LDMOS LDMOS
Frequency 500MHz 500MHz 500MHz 870MHz 500MHz
Gain 14dB 14dB 16.9dB 16dB 14.5dB
Voltage - Test 12.5 V 12.5 V 12.5 V 13.6 V 12.5 V
Current Rating (Amps) 5A 5A 7A 5A 7A
Noise Figure - - - - -
Current - Test 150 mA 150 mA 200 mA 150 mA 200 mA
Power - Output 15W 15W 35W 15W 25W
Voltage - Rated 40 V 40 V 40 V 40 V 40 V
Package / Case PowerSO-10 Exposed Bottom Pad PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) PowerSO-10 Exposed Bottom Pad PowerSO-10RF Exposed Bottom Pad (2 Straight Leads) PowerSO-10 Exposed Bottom Pad
Supplier Device Package PowerSO-10RF (Straight Lead) PowerSO-10RF (Formed Lead) PowerSO-10RF (Straight Lead) PowerSO-10RF (Straight Lead) PowerSO-10RF (Straight Lead)

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