A2T07H310-24SR6
  • Share:

NXP USA Inc. A2T07H310-24SR6

Manufacturer No:
A2T07H310-24SR6
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
FET RF 2CH 70V 880MHZ
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The A2T07H310-24SR6 is a high-performance RF MOSFET LDMOS (Laterally Diffused MOSFET) transistor manufactured by NXP USA Inc. This device is designed for high-power RF applications, particularly in the frequency range of 880 MHz. It features a dual-channel configuration, making it suitable for various RF amplification and switching roles. Although the A2T07H310-24SR6 is currently obsolete and no longer in production, it remains a significant component in legacy systems and can be sourced from distributors and secondary markets.

Key Specifications

Parameter Value
Part Number A2T07H310-24SR6
Manufacturer / Brand NXP Semiconductors / Freescale
Transistor Type LDMOS (Dual)
Voltage - Rated 70V
Frequency 880 MHz
Current Rating - Test 700 mA
Output Power 47 W
Gain 18.6 dB
Gate to Source Voltage (Vgs) 10 V
Min Operating Temperature -40 °C
Package / Case NI-1230-4LS2L
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant

Key Features

  • Dual-Channel Configuration: The A2T07H310-24SR6 features a dual-channel LDMOS transistor, enhancing its capability in high-power RF applications.
  • High Output Power: With an output power of 47 W, this transistor is suitable for high-power RF amplification.
  • High Gain: It offers a gain of 18.6 dB, making it efficient for signal amplification.
  • Wide Operating Temperature Range: The device can operate from -40 °C to a maximum temperature specified in the datasheet, ensuring reliability in various environmental conditions.
  • Lead-Free and RoHS Compliant: The transistor is lead-free and RoHS compliant, meeting current environmental and safety standards.

Applications

  • RF Amplifiers: The A2T07H310-24SR6 is ideal for use in RF amplifiers due to its high output power and gain.
  • Wireless Communication Systems: It is suitable for wireless communication systems, including base stations and other high-power RF transmission equipment.
  • Industrial and Medical Equipment: The transistor can be used in various industrial and medical devices that require high-power RF signals.
  • Military and Aerospace: Its robust performance and reliability make it a candidate for use in military and aerospace applications.

Q & A

  1. What is the part number of this RF MOSFET?

    The part number is A2T07H310-24SR6.

  2. Who is the manufacturer of the A2T07H310-24SR6?

    The manufacturer is NXP USA Inc. (formerly Freescale Semiconductor).

  3. What is the operating frequency of the A2T07H310-24SR6?

    The operating frequency is 880 MHz.

  4. What is the output power of the A2T07H310-24SR6?

    The output power is 47 W.

  5. What is the gain of the A2T07H310-24SR6?

    The gain is 18.6 dB.

  6. Is the A2T07H310-24SR6 lead-free and RoHS compliant?

    Yes, it is lead-free and RoHS compliant.

  7. What is the minimum operating temperature of the A2T07H310-24SR6?

    The minimum operating temperature is -40 °C.

  8. What is the package type of the A2T07H310-24SR6?

    The package type is NI-1230-4LS2L.

  9. Is the A2T07H310-24SR6 still in production?

    No, the A2T07H310-24SR6 is currently obsolete and no longer in production.

  10. Where can I find the datasheet for the A2T07H310-24SR6?

    The datasheet can be found on various distributor websites and the official NXP website.

Product Attributes

Transistor Type:LDMOS (Dual)
Frequency:880MHz
Gain:18.6dB
Voltage - Test:28 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:700 mA
Power - Output:47W
Voltage - Rated:70 V
Package / Case:NI-1230-4LS2L
Supplier Device Package:NI-1230-4LS2L
0 Remaining View Similar

In Stock

-
278

Please send RFQ , we will respond immediately.

Related Product By Categories

PD57045-E
PD57045-E
STMicroelectronics
FET RF 65V 945MHZ PWRSO-10
BLF7G24LS-100,118
BLF7G24LS-100,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
MMBF5484
MMBF5484
Fairchild Semiconductor
RF SMALL SIGNAL FIELD-EFFECT TRA
BF998R,235
BF998R,235
NXP USA Inc.
MOSFET N-CH 12V 30MA SOT143
BLF3G21-6,112
BLF3G21-6,112
Ampleon USA Inc.
RF FET LDMOS 65V 15.5DB SOT538A
BF511,215
BF511,215
NXP USA Inc.
JFET N-CH 20V 30MA SOT23
BLF7G20LS-250P,118
BLF7G20LS-250P,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
BLF7G21LS-160P,118
BLF7G21LS-160P,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121B
LET9045C
LET9045C
STMicroelectronics
MOSFET N-CH 80V 9A M-250
MW7IC2425NBR1
MW7IC2425NBR1
NXP USA Inc.
FET RF 65V 2.45GHZ TO-272-16
BLF7G24LS-100
BLF7G24LS-100
Ampleon USA Inc.
RF FET LDMOS 100W SOT502B
A2T18H455W23NR6
A2T18H455W23NR6
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO

Related Product By Brand

PESD5V0L5UV/DG125
PESD5V0L5UV/DG125
NXP USA Inc.
TVS DIODE
FRDM-K64F-AGM04
FRDM-K64F-AGM04
NXP USA Inc.
KIT CONTAINING THE FRDM-K64F AND
MK11DN512AVMC5
MK11DN512AVMC5
NXP USA Inc.
IC MCU 32B 512KB FLASH 121MAPBGA
P89LPC938FDH,529
P89LPC938FDH,529
NXP USA Inc.
IC MCU 8BIT 8KB FLASH 28TSSOP
P1012NSE2DFB
P1012NSE2DFB
NXP USA Inc.
IC MPU Q OR IQ 800MHZ 689TEBGA
TJA1041T/V,518
TJA1041T/V,518
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 14SO
UJA1075ATW/3V3WD,1
UJA1075ATW/3V3WD,1
NXP USA Inc.
IC INTFACE SPECIALIZED 32HTSSOP
74AHC244PW-Q100118
74AHC244PW-Q100118
NXP USA Inc.
BUS DRIVER, AHC/VHC/H/U/V SERIES
HEF4093BT/C4118
HEF4093BT/C4118
NXP USA Inc.
NAND GATE
74HC139D-Q100118
74HC139D-Q100118
NXP USA Inc.
DECODER/DRIVER, HC/UH SERIES
MMDS09254HT1
MMDS09254HT1
NXP USA Inc.
ADVANCED DOHERTY ALIGNMENT MODUL
MFRC53001T/0FE,112
MFRC53001T/0FE,112
NXP USA Inc.
IC RFID READER 13.56MHZ 32SO