A2T07H310-24SR6
  • Share:

NXP USA Inc. A2T07H310-24SR6

Manufacturer No:
A2T07H310-24SR6
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
FET RF 2CH 70V 880MHZ
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The A2T07H310-24SR6 is a high-performance RF MOSFET LDMOS (Laterally Diffused MOSFET) transistor manufactured by NXP USA Inc. This device is designed for high-power RF applications, particularly in the frequency range of 880 MHz. It features a dual-channel configuration, making it suitable for various RF amplification and switching roles. Although the A2T07H310-24SR6 is currently obsolete and no longer in production, it remains a significant component in legacy systems and can be sourced from distributors and secondary markets.

Key Specifications

Parameter Value
Part Number A2T07H310-24SR6
Manufacturer / Brand NXP Semiconductors / Freescale
Transistor Type LDMOS (Dual)
Voltage - Rated 70V
Frequency 880 MHz
Current Rating - Test 700 mA
Output Power 47 W
Gain 18.6 dB
Gate to Source Voltage (Vgs) 10 V
Min Operating Temperature -40 °C
Package / Case NI-1230-4LS2L
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant

Key Features

  • Dual-Channel Configuration: The A2T07H310-24SR6 features a dual-channel LDMOS transistor, enhancing its capability in high-power RF applications.
  • High Output Power: With an output power of 47 W, this transistor is suitable for high-power RF amplification.
  • High Gain: It offers a gain of 18.6 dB, making it efficient for signal amplification.
  • Wide Operating Temperature Range: The device can operate from -40 °C to a maximum temperature specified in the datasheet, ensuring reliability in various environmental conditions.
  • Lead-Free and RoHS Compliant: The transistor is lead-free and RoHS compliant, meeting current environmental and safety standards.

Applications

  • RF Amplifiers: The A2T07H310-24SR6 is ideal for use in RF amplifiers due to its high output power and gain.
  • Wireless Communication Systems: It is suitable for wireless communication systems, including base stations and other high-power RF transmission equipment.
  • Industrial and Medical Equipment: The transistor can be used in various industrial and medical devices that require high-power RF signals.
  • Military and Aerospace: Its robust performance and reliability make it a candidate for use in military and aerospace applications.

Q & A

  1. What is the part number of this RF MOSFET?

    The part number is A2T07H310-24SR6.

  2. Who is the manufacturer of the A2T07H310-24SR6?

    The manufacturer is NXP USA Inc. (formerly Freescale Semiconductor).

  3. What is the operating frequency of the A2T07H310-24SR6?

    The operating frequency is 880 MHz.

  4. What is the output power of the A2T07H310-24SR6?

    The output power is 47 W.

  5. What is the gain of the A2T07H310-24SR6?

    The gain is 18.6 dB.

  6. Is the A2T07H310-24SR6 lead-free and RoHS compliant?

    Yes, it is lead-free and RoHS compliant.

  7. What is the minimum operating temperature of the A2T07H310-24SR6?

    The minimum operating temperature is -40 °C.

  8. What is the package type of the A2T07H310-24SR6?

    The package type is NI-1230-4LS2L.

  9. Is the A2T07H310-24SR6 still in production?

    No, the A2T07H310-24SR6 is currently obsolete and no longer in production.

  10. Where can I find the datasheet for the A2T07H310-24SR6?

    The datasheet can be found on various distributor websites and the official NXP website.

Product Attributes

Transistor Type:LDMOS (Dual)
Frequency:880MHz
Gain:18.6dB
Voltage - Test:28 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:700 mA
Power - Output:47W
Voltage - Rated:70 V
Package / Case:NI-1230-4LS2L
Supplier Device Package:NI-1230-4LS2L
0 Remaining View Similar

In Stock

-
278

Please send RFQ , we will respond immediately.

Related Product By Categories

BLF881S,112
BLF881S,112
Ampleon USA Inc.
RF MOSFET LDMOS 50V LDMOST
MRFE6VP100HR5
MRFE6VP100HR5
NXP USA Inc.
RF MOSFET LDMOS 50V NI780-4
AFT09S282NR3 REEL
AFT09S282NR3 REEL
Freescale Semiconductor
AFT09S282NR3 REEL
BLF7G27LS-100,118
BLF7G27LS-100,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLF574XRS,112
BLF574XRS,112
Ampleon USA Inc.
RF FET LDMOS 110V 23DB SOT1214B
A2V09H525-04NR6
A2V09H525-04NR6
NXP USA Inc.
AIRFAST RF LDMOS WIDEBAND INTEGR
BLF7G22LS-130,112
BLF7G22LS-130,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BF1212,215
BF1212,215
NXP USA Inc.
MOSFET N-CH DUAL GATE 6V SOT143B
PD55008L-E
PD55008L-E
STMicroelectronics
TRANSISTOR RF 5X5 POWERFLAT
BLF7G22LS-200,118
BLF7G22LS-200,118
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BF908R,215
BF908R,215
NXP USA Inc.
MOSFET DUAL GATE 12V 40MA SOT143
BLF8G22LS-160BVX
BLF8G22LS-160BVX
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1244B

Related Product By Brand

BAV99/LF1R
BAV99/LF1R
NXP USA Inc.
DIODE SWITCHING TO-236AB
ADC1003S030TS/C1'1
ADC1003S030TS/C1'1
NXP USA Inc.
IC ADC 10BIT 28SSOP
MC56F84550VLFR
MC56F84550VLFR
NXP USA Inc.
IC MCU 32BIT 96KB FLASH 48LQFP
P89LPC954FBD48,151
P89LPC954FBD48,151
NXP USA Inc.
IC MCU 8BIT 16KB FLASH 48LQFP
MCIMX6U6AVM08ADR
MCIMX6U6AVM08ADR
NXP USA Inc.
I.MX6 ROM PERF ENHAN
MCIMX535DVP1C2R2
MCIMX535DVP1C2R2
NXP USA Inc.
IC MPU 32BIT ARM 529PBGA
74HC4852D,112
74HC4852D,112
NXP USA Inc.
74HC4852D - DIFFERENTIAL MULTIP
UJA1168TK,118
UJA1168TK,118
NXP USA Inc.
IC TRANSCEIVER FULL 1/1 14HVSON
TJA1051T/3/1U
TJA1051T/3/1U
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8SO
N74F07D,602
N74F07D,602
NXP USA Inc.
IC BUFFER NON-INVERT 5.5V 14SO
74AHC1G66GW-Q100125
74AHC1G66GW-Q100125
NXP USA Inc.
SPST
MC33771BTA1AER2
MC33771BTA1AER2
NXP USA Inc.
14-CHANNEL LI-ION BATTERY CELL C