A2T07H310-24SR6
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NXP USA Inc. A2T07H310-24SR6

Manufacturer No:
A2T07H310-24SR6
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
FET RF 2CH 70V 880MHZ
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The A2T07H310-24SR6 is a high-performance RF MOSFET LDMOS (Laterally Diffused MOSFET) transistor manufactured by NXP USA Inc. This device is designed for high-power RF applications, particularly in the frequency range of 880 MHz. It features a dual-channel configuration, making it suitable for various RF amplification and switching roles. Although the A2T07H310-24SR6 is currently obsolete and no longer in production, it remains a significant component in legacy systems and can be sourced from distributors and secondary markets.

Key Specifications

Parameter Value
Part Number A2T07H310-24SR6
Manufacturer / Brand NXP Semiconductors / Freescale
Transistor Type LDMOS (Dual)
Voltage - Rated 70V
Frequency 880 MHz
Current Rating - Test 700 mA
Output Power 47 W
Gain 18.6 dB
Gate to Source Voltage (Vgs) 10 V
Min Operating Temperature -40 °C
Package / Case NI-1230-4LS2L
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant

Key Features

  • Dual-Channel Configuration: The A2T07H310-24SR6 features a dual-channel LDMOS transistor, enhancing its capability in high-power RF applications.
  • High Output Power: With an output power of 47 W, this transistor is suitable for high-power RF amplification.
  • High Gain: It offers a gain of 18.6 dB, making it efficient for signal amplification.
  • Wide Operating Temperature Range: The device can operate from -40 °C to a maximum temperature specified in the datasheet, ensuring reliability in various environmental conditions.
  • Lead-Free and RoHS Compliant: The transistor is lead-free and RoHS compliant, meeting current environmental and safety standards.

Applications

  • RF Amplifiers: The A2T07H310-24SR6 is ideal for use in RF amplifiers due to its high output power and gain.
  • Wireless Communication Systems: It is suitable for wireless communication systems, including base stations and other high-power RF transmission equipment.
  • Industrial and Medical Equipment: The transistor can be used in various industrial and medical devices that require high-power RF signals.
  • Military and Aerospace: Its robust performance and reliability make it a candidate for use in military and aerospace applications.

Q & A

  1. What is the part number of this RF MOSFET?

    The part number is A2T07H310-24SR6.

  2. Who is the manufacturer of the A2T07H310-24SR6?

    The manufacturer is NXP USA Inc. (formerly Freescale Semiconductor).

  3. What is the operating frequency of the A2T07H310-24SR6?

    The operating frequency is 880 MHz.

  4. What is the output power of the A2T07H310-24SR6?

    The output power is 47 W.

  5. What is the gain of the A2T07H310-24SR6?

    The gain is 18.6 dB.

  6. Is the A2T07H310-24SR6 lead-free and RoHS compliant?

    Yes, it is lead-free and RoHS compliant.

  7. What is the minimum operating temperature of the A2T07H310-24SR6?

    The minimum operating temperature is -40 °C.

  8. What is the package type of the A2T07H310-24SR6?

    The package type is NI-1230-4LS2L.

  9. Is the A2T07H310-24SR6 still in production?

    No, the A2T07H310-24SR6 is currently obsolete and no longer in production.

  10. Where can I find the datasheet for the A2T07H310-24SR6?

    The datasheet can be found on various distributor websites and the official NXP website.

Product Attributes

Transistor Type:LDMOS (Dual)
Frequency:880MHz
Gain:18.6dB
Voltage - Test:28 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:700 mA
Power - Output:47W
Voltage - Rated:70 V
Package / Case:NI-1230-4LS2L
Supplier Device Package:NI-1230-4LS2L
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