Overview
The MW6S004NT1 is a high-performance, lateral N-channel RF power MOSFET designed by NXP USA Inc. This device is optimized for Class A or Class AB base station applications, supporting frequencies up to 2000 MHz. It is suitable for both analog and digital modulation, as well as multicarrier amplifier applications. The MW6S004NT1 is known for its reliability, durability, and excellent thermal stability, making it a robust choice for various RF power applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Frequency Range | 1-2000 | MHz |
| Output Power | 4 | Watts PEP |
| Drain-Source Voltage (Vds) | 28 | V |
| Gate Threshold Voltage (Vgs(th)) | 1.2 - 2.7 | V |
| Drain-Source On-Voltage (Vds(on)) | 0.27 - 0.37 | V |
| Power Gain @ 1960 MHz | 18 dB | |
| Drain Efficiency @ 1960 MHz | 33% | |
| Intermodulation Distortion (IMD) @ 1960 MHz | -34 dBc | |
| Package Type | PLD-1.5 | |
| RoHS Compliance | Yes |
Key Features
- Characterized with series equivalent large-signal impedance parameters for broadband stability
- On-chip RF feedback for enhanced stability
- Integrated ESD protection for improved reliability
- Thermally enhanced packaging for lower junction temperatures
- Gold metalization for excellent thermal stability
- Common source configuration
- Capable of handling 5:1 VSWR at 28 Vdc, 1960 MHz, 4 Watts CW output power
Applications
- Class A or Class AB base station applications
- Analog and digital modulation applications
- Multicarrier amplifier applications
- ISM (Industrial, Scientific, and Medical) applications
- DC large signal applications
Q & A
- What is the frequency range of the MW6S004NT1?
The MW6S004NT1 operates within a frequency range of 1-2000 MHz.
- What is the maximum output power of the MW6S004NT1?
The maximum output power is 4 Watts PEP.
- What is the drain-source voltage (Vds) of the MW6S004NT1?
The drain-source voltage (Vds) is 28 V.
- What is the gate threshold voltage (Vgs(th)) of the MW6S004NT1?
The gate threshold voltage (Vgs(th)) ranges from 1.2 to 2.7 V.
- Is the MW6S004NT1 RoHS compliant?
Yes, the MW6S004NT1 is RoHS compliant.
- What type of packaging does the MW6S004NT1 use?
The MW6S004NT1 uses PLD-1.5 packaging.
- What are some key applications of the MW6S004NT1?
Key applications include Class A or Class AB base station applications, analog and digital modulation, multicarrier amplifier applications, ISM applications, and DC large signal applications.
- Does the MW6S004NT1 have integrated ESD protection?
Yes, the MW6S004NT1 has integrated ESD protection.
- What is the typical power gain of the MW6S004NT1 at 1960 MHz?
The typical power gain at 1960 MHz is 18 dB.
- What is the typical drain efficiency of the MW6S004NT1 at 1960 MHz?
The typical drain efficiency at 1960 MHz is 33%.
