Overview
The PD55035S-E is a high-performance RF power transistor designed by STMicroelectronics. This device is a common source N-channel, enhancement-mode lateral field-effect transistor (LDMOS FET) optimized for wide-band communication and ISM (Industrial, Scientific, and Medical) applications. It is known for its high gain, broad band capabilities, and excellent thermal stability, making it an ideal solution for various commercial and industrial uses.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | 40 | V |
| Gate-source voltage (VGS) | ±20 | V |
| Drain current (ID) | 7 | A |
| Total power dissipation at TC = 70 °C (PTOT) | 95 | W |
| Maximum operating junction temperature (TJ) | 165 | °C |
| Storage temperature range (Tstg) | -65 to 150 | °C |
| Thermal resistance, junction-to-case (RthJC) | 1.0 | °C/W |
| Output power (POUT) at VDD = 12.5 V, f = 500 MHz | 35 | W |
| Power gain (GPS) at VDD = 12.5 V, f = 500 MHz | 16.9 | dB |
| Drain efficiency (ηD) at VDD = 12.5 V, f = 500 MHz | 62 | % |
| Gate threshold voltage (VGS(th)) | 2.05 to 2.65 | V |
| Static drain-source on-voltage (VDS(on)) | 510 mV | mV |
| Forward transconductance (GFS) | 2.5 S | S |
| Input capacitance (Ciss) | 92 pF | pF |
| Output capacitance (Coss) | 73 pF | pF |
| Reverse transfer capacitance (Crss) | 6.1 pF | pF |
Key Features
- Common source N-channel, enhancement-mode LDMOS FET.
- High gain and broad band capabilities up to 1 GHz.
- Excellent thermal stability and reliability.
- Mounted in the PowerSO-10RF plastic package, the first true SMD plastic RF power package approved by ST JEDEC.
- Optimized for RF needs with excellent RF performance and ease of assembly.
- Superior linearity performance, making it ideal for applications such as car mobile radio.
Applications
The PD55035S-E is designed for various commercial and industrial applications, including:
- Wide-band communication systems.
- ISM (Industrial, Scientific, and Medical) applications.
- Car mobile radio and other vehicular communication systems.
- High-power RF amplifiers in industrial and commercial settings.
Q & A
- What is the PD55035S-E?
The PD55035S-E is a high-performance RF power transistor designed by STMicroelectronics, specifically a common source N-channel, enhancement-mode LDMOS FET. - What are the key applications of the PD55035S-E?
The device is used in wide-band communication systems, ISM applications, car mobile radio, and high-power RF amplifiers in industrial and commercial settings. - What is the maximum operating junction temperature of the PD55035S-E?
The maximum operating junction temperature is 165 °C. - What is the output power of the PD55035S-E at 500 MHz?
The output power is 35 W at VDD = 12.5 V and f = 500 MHz. - What is the power gain of the PD55035S-E at 500 MHz?
The power gain is 16.9 dB at VDD = 12.5 V and f = 500 MHz. - What is the drain efficiency of the PD55035S-E at 500 MHz?
The drain efficiency is 62% at VDD = 12.5 V and f = 500 MHz. - What package type is the PD55035S-E mounted in?
The device is mounted in the PowerSO-10RF plastic package. - What are the benefits of the PowerSO-10RF package?
The PowerSO-10RF package offers high reliability, excellent RF performance, and ease of assembly, and it is the first ST JEDEC approved high power SMD package. - What is the gate threshold voltage range of the PD55035S-E?
The gate threshold voltage range is from 2.05 to 2.65 V. - What is the thermal resistance, junction-to-case (RthJC) of the PD55035S-E?
The thermal resistance, junction-to-case (RthJC) is 1.0 °C/W.
