MRF300AN-27MHZ
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NXP USA Inc. MRF300AN-27MHZ

Manufacturer No:
MRF300AN-27MHZ
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
MRF300AN REF BRD 27MHZ 330W
Delivery:
Payment:
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Product Introduction

Overview

The MRF300AN-27MHZ is a high-performance, wideband RF power LDMOS transistor produced by NXP USA Inc. This device is part of NXP's series of rugged transistors designed for various high-frequency applications. The MRF300AN is characterized by its ability to operate over a wide frequency range of 1.8 to 250 MHz, making it versatile for multiple use cases.

The transistor is available in the TO-247-3L package and features a mirror pinout version (MRF300BN) to simplify configurations such as push-pull, two-up setups. This design flexibility, combined with its high power handling and efficiency, makes the MRF300AN an ideal choice for industrial, scientific, and medical (ISM) applications, as well as HF and VHF communications and broadcast systems.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDSS) -0.5, +133 Vdc
Gate-Source Voltage (VGS) -6.0, +10 Vdc
Operating Voltage (VDD) 50 Vdc
Continuous Wave (CW) Power Output 300 W
Frequency Range 1.8 - 250 MHz
Power Gain (Gps) at 27 MHz 28 dB
Drain Efficiency (ηD) at 27 MHz 80% %
Storage Temperature Range -65 to +150 °C
Package Type TO-247-3L

Key Features

  • Wide Frequency Range: Operates from 1.8 to 250 MHz, making it suitable for a variety of applications.
  • High Power Handling: Capable of delivering up to 300 W of continuous wave power output.
  • High Efficiency: Achieves high drain efficiency, up to 80% at 27 MHz.
  • Compact Reference Circuits: Uses 2 x 3 inch (5.1 x 7.6 cm) power block reference designs that can be adapted for different frequencies with minimal changes.
  • Durable Design: Designed to withstand a 65:1 Voltage Standing Wave Ratio (VSWR), making it robust for industrial applications.
  • Mirror Pinout Versions: Available in mirror pinout versions (MRF300AN and MRF300BN) to simplify push-pull configurations.
  • Long Product Life Cycle: Part of NXP’s Product Longevity Program, ensuring availability for 15 years.

Applications

  • Industrial, Scientific, and Medical (ISM) Applications: Suitable for applications such as laser generation, plasma etching, particle accelerators, MRI, and industrial heating, welding, and drying systems.
  • HF and VHF Communications: Used in high-frequency and very high-frequency communication systems.
  • Broadcast and Aerospace: Applicable in radio and VHF TV broadcast, as well as aerospace applications.
  • Switch Mode Power Supplies: Enables switching at higher frequencies, reducing the size of other components in the Bill of Materials (BoM).

Q & A

  1. What is the frequency range of the MRF300AN transistor?

    The MRF300AN operates over a frequency range of 1.8 to 250 MHz.

  2. What is the maximum continuous wave power output of the MRF300AN?

    The MRF300AN can deliver up to 300 W of continuous wave power output.

  3. What is the typical drain efficiency of the MRF300AN at 27 MHz?

    The typical drain efficiency at 27 MHz is around 80%.

  4. What package type is the MRF300AN available in?

    The MRF300AN is available in the TO-247-3L package.

  5. Can the MRF300AN be used in push-pull configurations?
  6. What is the storage temperature range for the MRF300AN?
  7. Is the MRF300AN part of any product longevity program?
  8. What are some common applications for the MRF300AN?
  9. How can the reference circuits for the MRF300AN be adapted for different frequencies?
  10. What is the typical power gain of the MRF300AN at 27 MHz?

Product Attributes

Transistor Type:LDMOS
Frequency:1.8MHz ~ 250MHz
Gain:28.2dB
Voltage - Test:50 V
Current Rating (Amps):10µA
Noise Figure:- 
Current - Test:100 mA
Power - Output:300W
Voltage - Rated:133 V
Package / Case:- 
Supplier Device Package:- 
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$956.37
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