Overview
The MMBF5485 is an N-Channel RF JFET (Junction Field-Effect Transistor) produced by onsemi. This device is primarily designed for electronic switching applications, particularly those requiring low On Resistance analog switching. It is sourced from Process 50, making it suitable for a wide range of general usage applications.
Key Specifications
Parameter | Min | Typ | Max | Unit |
---|---|---|---|---|
VDG (Drain-Gate Voltage) | - | - | 25 | V |
VGS (Gate-Source Voltage) | - | - | -25 | V |
IGF (Forward Gate Current) | - | - | 10 | mA |
TJ, Tstg (Operating and Storage Junction Temperature Range) | -55 | - | 150 | °C |
IDSS (Zero-Gate Voltage Drain Current) | 4.0 | - | 10 | mA |
V(BR)GSS (Gate-Source Breakdown Voltage) | -25 | - | - | V |
Ciss (Input Capacitance) | - | - | 5.0 | pF |
Crss (Reverse Transfer Capacitance) | - | - | 1.0 | pF |
Coss (Output Capacitance) | - | - | 2.0 | pF |
Frequency | - | - | 400 | MHz |
Package Type | - | - | SOT-23 (TO-236) | - |
Key Features
- N-Channel RF JFET: Suitable for electronic switching and RF amplifier applications.
- Low On Resistance: Ideal for analog switching applications.
- High Frequency Capability: Operates up to 400 MHz.
- Compact Package: SOT-23 (TO-236) package, making it suitable for space-constrained designs.
- Wide Temperature Range: Operating and storage junction temperature range from -55°C to 150°C.
- Low Noise Figure: Suitable for applications requiring low noise performance.
Applications
- Electronic Switching: Used in low On Resistance analog switching applications.
- RF Amplifiers: Suitable for RF amplifier circuits due to its high frequency capability.
- General Purpose Amplifiers: Can be used in various general-purpose amplifier configurations.
- Communication Systems: Applicable in communication systems requiring high-frequency and low-noise performance.
Q & A
- What is the primary application of the MMBF5485?
The MMBF5485 is primarily designed for electronic switching applications, particularly those requiring low On Resistance analog switching.
- What is the maximum drain-gate voltage for the MMBF5485?
The maximum drain-gate voltage (VDG) is 25 V.
- What is the operating frequency range of the MMBF5485?
The MMBF5485 operates up to 400 MHz.
- What is the package type of the MMBF5485?
The MMBF5485 is packaged in a SOT-23 (TO-236) package.
- What are the thermal characteristics of the MMBF5485?
The device has a thermal resistance, junction to ambient (RJA), of 556 °C/W and a thermal resistance, junction to case (RJC), of - °C/W.
- What is the maximum gate-source voltage for the MMBF5485?
The maximum gate-source voltage (VGS) is -25 V.
- What is the typical zero-gate voltage drain current (IDSS) for the MMBF5485?
The typical zero-gate voltage drain current (IDSS) is 4.0 mA to 10 mA.
- What are the input, reverse transfer, and output capacitances of the MMBF5485?
The input capacitance (Ciss) is up to 5.0 pF, the reverse transfer capacitance (Crss) is up to 1.0 pF, and the output capacitance (Coss) is up to 2.0 pF.
- Is the MMBF5485 suitable for high-temperature applications?
Yes, the MMBF5485 has an operating and storage junction temperature range from -55°C to 150°C.
- What is the noise figure of the MMBF5485?
The noise figure at 100 MHz is typically around 2.0 dB, and at 400 MHz, it is typically around 4.0 dB.