A2I25D025NR1
  • Share:

NXP USA Inc. A2I25D025NR1

Manufacturer No:
A2I25D025NR1
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
IC TRANS RF LDMOS
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The A2I25D025NR1 is a wideband integrated power amplifier produced by NXP USA Inc. This device is designed for high-performance applications, particularly in the realm of cellular base stations and other wireless communication systems. It operates within a frequency range of 2300 to 2690 MHz, making it suitable for various cellular bands. The amplifier is built using LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology, which offers high power density and efficiency.

Key Specifications

Parameter Value
Technology Si (Silicon)
Operating Frequency 2300 - 2690 MHz
Supply Voltage 26 - 32 V
Average Output Power 3.2 W
Power Gain Up to 32 dB
Power Added Efficiency (PAE) Up to 19.8%
ACPR (Adjacent Channel Power Ratio) -48 dBc
Package Type TO-270WBG-17 (Gull Wing)
Moisture Sensitivity Yes

Key Features

  • High power density and efficiency using LDMOS technology.
  • Wideband operation from 2300 to 2690 MHz, covering multiple cellular bands.
  • High average output power of 3.2 W.
  • High power gain of up to 32 dB.
  • Good power added efficiency (PAE) of up to 19.8%.
  • Low adjacent channel power ratio (ACPR) of -48 dBc.
  • Robust package design (TO-270WBG-17) suitable for high-power applications.

Applications

  • Cellular base stations.
  • Wireless communication systems.
  • Broadcast transmitters.
  • Industrial and medical RF applications.
  • Other high-power RF amplification needs.

Q & A

  1. Q: What is the operating frequency range of the A2I25D025NR1?

    A: The A2I25D025NR1 operates within a frequency range of 2300 to 2690 MHz.

  2. Q: What is the average output power of the A2I25D025NR1?

    A: The average output power is 3.2 W.

  3. Q: What is the power added efficiency (PAE) of the A2I25D025NR1?

    A: The PAE can be up to 19.8%.

  4. Q: What package type is used for the A2I25D025NR1?

    A: The package type is TO-270WBG-17 (Gull Wing).

  5. Q: Is the A2I25D025NR1 moisture sensitive?

    A: Yes, it is moisture sensitive.

  6. Q: What are the typical applications of the A2I25D025NR1?

    A: Typical applications include cellular base stations, wireless communication systems, broadcast transmitters, and other high-power RF applications.

  7. Q: How do I ensure the authenticity of the A2I25D025NR1 from NXP USA Inc.?

    A: Ensure you purchase from authorized distributors or directly from NXP USA Inc. to guarantee authenticity.

  8. Q: What is the warranty period for the A2I25D025NR1?

    A: The warranty period can vary depending on the supplier, but typically, it is covered by a 1-year warranty for defects in materials and workmanship.

  9. Q: Where can I find detailed information about the A2I25D025NR1, such as application notes and datasheets?

    A: Detailed information can be found on the NXP Semiconductors website or through authorized distributors.

  10. Q: How do I place an order for the A2I25D025NR1?

    A: You can place an order through the website of an authorized distributor or directly through NXP Semiconductors by following their ordering process.

Product Attributes

Transistor Type:LDMOS (Dual)
Frequency:2.69GHz
Gain:31.9dB
Voltage - Test:28 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:59 mA
Power - Output:3.2W
Voltage - Rated:65 V
Package / Case:TO-270-17 Variant, Flat Leads
Supplier Device Package:TO-270WB-17
0 Remaining View Similar

In Stock

$38.89
7

Please send RFQ , we will respond immediately.

Same Series
A2I25D025GNR1
A2I25D025GNR1
IC TRANS RF LDMOS

Similar Products

Part Number A2I25D025NR1 A2I25D025GNR1
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
Transistor Type LDMOS (Dual) LDMOS (Dual)
Frequency 2.69GHz 2.69GHz
Gain 31.9dB 31.9dB
Voltage - Test 28 V 28 V
Current Rating (Amps) - -
Noise Figure - -
Current - Test 59 mA 59 mA
Power - Output 3.2W 3.2W
Voltage - Rated 65 V 65 V
Package / Case TO-270-17 Variant, Flat Leads TO-270-17 Variant, Gull Wing
Supplier Device Package TO-270WB-17 TO-270WBG-17

Related Product By Categories

BLF647P,112
BLF647P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121A
BLL6H0514-25,112
BLL6H0514-25,112
Ampleon USA Inc.
RF FET LDMOS 100V 21DB SOT467C
AFT27S010NT1
AFT27S010NT1
NXP USA Inc.
FET RF NCH 65V 2700MHZ PLD1.5W
BLF245B
BLF245B
Rochester Electronics, LLC
BLF245B - VHF PUSH-PULL POWER VD
BLF578XR,112
BLF578XR,112
Ampleon USA Inc.
RF MOSFET LDMOS DL 50V SOT539A
MRFE6VP5150NR1
MRFE6VP5150NR1
NXP USA Inc.
RF MOSFET LDMOS DL 50V TO270
BLF8G22LS-140J
BLF8G22LS-140J
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF888,112
BLF888,112
Ampleon USA Inc.
RF FET LDMOS 104V 19DB SOT979A
BF861B,215
BF861B,215
NXP USA Inc.
JFET N-CH 25V 15MA SOT23
BLF6G27-45,135
BLF6G27-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608A
BLF6G20S-45,118
BLF6G20S-45,118
Ampleon USA Inc.
RF FET LDMOS 65V 19.2DB SOT608B
BF908R,215
BF908R,215
NXP USA Inc.
MOSFET DUAL GATE 12V 40MA SOT143

Related Product By Brand

BC817DPN/DG/B2115
BC817DPN/DG/B2115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
ADC1003S030TS/C1'1
ADC1003S030TS/C1'1
NXP USA Inc.
IC ADC 10BIT 28SSOP
MKL04Z32VLF4
MKL04Z32VLF4
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 48LQFP
S9S12G48AMLF
S9S12G48AMLF
NXP USA Inc.
IC MCU 16BIT 48KB FLASH 48LQFP
MKE02Z64VQH4
MKE02Z64VQH4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 64QFP
SPC5745CBK1AMMJ6
SPC5745CBK1AMMJ6
NXP USA Inc.
IC MCU 32BIT 2MB FLSH 256MAPPBGA
MIMX8QP5AVUFFAB
MIMX8QP5AVUFFAB
NXP USA Inc.
MPU I.MX8 QUAD PLUS
TJA1055T/2Z
TJA1055T/2Z
NXP USA Inc.
IC TRANSCEIVER 1/1 14SO
SCC2692AC1N40,602
SCC2692AC1N40,602
NXP USA Inc.
IC UART DUAL 40-DIP
74HC245PW/AU118
74HC245PW/AU118
NXP USA Inc.
IC TXRX NON-INVERT 6V 20TSSOP
74HCT4094D-Q100118
74HCT4094D-Q100118
NXP USA Inc.
SERIAL IN PARALLEL OUT
MMPF0200F6AEP
MMPF0200F6AEP
NXP USA Inc.
IC REG CONV I.MX6 11OUT 56HVQFN