Overview
The AFT27S006NT1 is a high-performance RF power LDMOS transistor manufactured by NXP USA Inc. This device is specifically designed for cellular base station applications, covering a broad frequency range of 728 to 3700 MHz. It offers a high average output power of 28.8 dBm, making it suitable for various wireless communication systems.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | -0.5, +65 | Vdc |
| Gate-Source Voltage | VGS | -6.0, +10 | Vdc |
| Operating Voltage | VDD | 32, +0 | Vdc |
| Storage Temperature Range | Tstg | -65 to +150 | °C |
| Case Operating Temperature Range | TC | -40 to +150 | °C |
| Operating Junction Temperature Range | TJ | -40 to +150 | °C |
| Thermal Resistance, Junction to Case | RθJC | 3.4 | °C/W |
| Average Output Power | Pout | 28.8 dBm |
Key Features
- Greater negative gate-source voltage range for improved Class C operation.
- Designed for digital predistortion error correction systems.
- Universal broadband driver capabilities.
- High average output power of 28.8 dBm.
- Broad frequency range of 728 to 3700 MHz.
- Compliant with EU RoHS, ELV, and China RoHS directives.
Applications
The AFT27S006NT1 is primarily used in cellular base station applications, including:
- Wireless communication systems.
- Base station amplifiers.
- Digital predistortion error correction systems.
- Broadband RF power amplification.
Q & A
- What is the frequency range of the AFT27S006NT1?
The AFT27S006NT1 operates over a frequency range of 728 to 3700 MHz.
- What is the average output power of the AFT27S006NT1?
The average output power is 28.8 dBm.
- What are the key features of the AFT27S006NT1?
The device features a greater negative gate-source voltage range, is designed for digital predistortion error correction systems, and has universal broadband driver capabilities.
- What are the typical applications of the AFT27S006NT1?
It is used in cellular base station applications, wireless communication systems, base station amplifiers, and broadband RF power amplification.
- Is the AFT27S006NT1 compliant with environmental regulations?
Yes, it is compliant with EU RoHS, ELV, and China RoHS directives.
- What is the thermal resistance of the AFT27S006NT1?
The thermal resistance from junction to case is 3.4 °C/W.
- What is the operating junction temperature range of the AFT27S006NT1?
The operating junction temperature range is -40 to +150 °C.
- What is the storage temperature range for the AFT27S006NT1?
The storage temperature range is -65 to +150 °C.
- What are the maximum ratings for drain-source and gate-source voltages?
The maximum drain-source voltage is +65 Vdc, and the maximum gate-source voltage is +10 Vdc.
- How is the device packaged?
The device is packaged in a PLD-1.5W package with a SOT1811-2 footprint.
