MMBF4416LT1G
  • Share:

onsemi MMBF4416LT1G

Manufacturer No:
MMBF4416LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
JFET N-CH 30V 15MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBF4416LT1G is a N-Channel JFET (Junction Field-Effect Transistor) produced by onsemi, designed for VHF/UHF amplifier applications. This transistor is known for its compact design and high performance, making it a preferred choice for space-constrained and high-efficiency circuits. The MMBF4416LT1G operates at a maximum voltage of 30V and is packaged in a SOT-23-3 (TO-236) case, which simplifies PCB layout and minimizes the overall footprint of the circuit.

Key Specifications

Parameter Symbol Value Unit
Drain-Source Voltage VDS 30 Vdc
Drain-Gate Voltage VDG 30 Vdc
Gate-Source Voltage VGS 30 Vdc
Gate Current IG 10 mAdc
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
Total Device Dissipation (FR-5 Board, TA = 25°C) PD 225 mW
Thermal Resistance, Junction-to-Ambient RJA 556 °C/W
Zero-Gate-Voltage Drain Current (VGS = 0) IDSS 5.0 to 15 mAdc
Gate-Source Breakdown Voltage (IG = 1.0 μAdc, VDS = 0) V(BR)GSS 30 Vdc

Key Features

  • Compact Design: The SOT-23-3 package simplifies PCB layout and minimizes the overall footprint of the circuit, making it ideal for space-constrained applications.
  • Low Threshold Voltage: Suitable for N-channel operation with a low threshold voltage, enhancing performance in RF applications.
  • High Efficiency: Optimized for low rDS(on), providing higher efficiency and extending battery life in analog and digital signal switching applications.
  • Pb-Free Package: Available in a Pb-free package, ensuring environmental safety and compliance with RoHS standards.
  • Fast Response Time: Guaranteed fast response time, which is crucial for high-performance RF and analog circuits.

Applications

The MMBF4416LT1G is designed for various high-frequency applications, including:

  • VHF/UHF Amplifiers: Ideal for use in VHF/UHF amplifier circuits due to its high gain and low noise characteristics.
  • RF Circuits: Suitable for RF signal amplification and switching in wireless communication systems and other RF applications.
  • Analog and Digital Signal Switching: Used in circuits requiring high efficiency and fast response times for analog and digital signal switching.

Q & A

  1. Q: What is the maximum operating voltage of the MMBF4416LT1G?

    A: The maximum operating voltage of the MMBF4416LT1G is 30V.

  2. Q: What package type is the MMBF4416LT1G available in?

    A: The MMBF4416LT1G is available in a SOT-23-3 (TO-236) package.

  3. Q: What are the key features of the MMBF4416LT1G?

    A: Key features include a compact design, low threshold voltage, high efficiency, Pb-free package, and fast response time.

  4. Q: What are the typical applications of the MMBF4416LT1G?

    A: Typical applications include VHF/UHF amplifiers, RF circuits, and analog and digital signal switching.

  5. Q: What is the thermal resistance of the MMBF4416LT1G?

    A: The thermal resistance (Junction-to-Ambient) of the MMBF4416LT1G is 556°C/W.

  6. Q: Is the MMBF4416LT1G RoHS compliant?

    A: Yes, the MMBF4416LT1G is available in a Pb-free package and is RoHS compliant.

  7. Q: What is the maximum current rating of the MMBF4416LT1G?

    A: The maximum current rating of the MMBF4416LT1G is 15,000 μA (15 mA).

  8. Q: How can I obtain detailed information about the MMBF4416LT1G?

    A: Detailed information can be found in the datasheet available on the onsemi website or through authorized distributors like Ovaga and Xecor.

  9. Q: What is the junction and storage temperature range for the MMBF4416LT1G?

    A: The junction and storage temperature range for the MMBF4416LT1G is −55 to +150°C.

  10. Q: Where can I purchase the MMBF4416LT1G?

    A: The MMBF4416LT1G can be purchased from authorized distributors such as Ovaga, Xecor, and other electronic component suppliers.

Product Attributes

Transistor Type:N-Channel JFET
Frequency:- 
Gain:- 
Voltage - Test:- 
Current Rating (Amps):15mA
Noise Figure:- 
Current - Test:- 
Power - Output:- 
Voltage - Rated:30 V
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
0 Remaining View Similar

In Stock

-
310

Please send RFQ , we will respond immediately.

Related Product By Categories

CGH40010F
CGH40010F
Wolfspeed, Inc.
RF MOSFET HEMT 28V 440166
BLF184XRGQ
BLF184XRGQ
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214C
BLF7G24LS-140,112
BLF7G24LS-140,112
Ampleon USA Inc.
RF MOSFET LDMOS 28V SOT502B
A2V07H525-04NR6
A2V07H525-04NR6
NXP USA Inc.
AIRFAST RF LDMOS WIDEBAND INTEGR
BLF7G22LS-130,112
BLF7G22LS-130,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF2043F,112
BLF2043F,112
Ampleon USA Inc.
RF FET LDMOS 65V 11DB SOT467C
BLF6G38LS-50,112
BLF6G38LS-50,112
Ampleon USA Inc.
RF FET LDMOS 65V 14DB SOT502B
SD2918
SD2918
STMicroelectronics
TRANS RF N-CH HF/VHF/UHF M113
PD55003
PD55003
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
BLF6G27-45,135
BLF6G27-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608A
BF1107,215
BF1107,215
NXP USA Inc.
MOSFET N-CH 3V 10MA SOT23
A2T18H455W23NR6
A2T18H455W23NR6
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO

Related Product By Brand

MMSZ4690T1G
MMSZ4690T1G
onsemi
DIODE ZENER 5.6V 500MW SOD123
MMBZ5244BLT1G
MMBZ5244BLT1G
onsemi
DIODE ZENER 14V 225MW SOT23-3
1N5353BRL
1N5353BRL
onsemi
DIODE ZENER 16V 5W AXIAL
MMBTA55LT1G
MMBTA55LT1G
onsemi
TRANS PNP 60V 0.5A SOT23-3
FCMT125N65S3
FCMT125N65S3
onsemi
MOSFET N-CH 650V 24A 4PQFN
MC74HC245ADWR2
MC74HC245ADWR2
onsemi
IC BUS TRANSCVR 3-ST 8B 20SOIC
NL27WZ08USG
NL27WZ08USG
onsemi
IC GATE AND 2CH 2-INP US8
MC100EP16VBDTG
MC100EP16VBDTG
onsemi
IC RCVR/DRVR ECL DIFF 5V 8TSSOP
CAT24C02YI-GT3JN
CAT24C02YI-GT3JN
onsemi
IC EEPROM 2KBIT I2C 8TSSOP
NCV7720DQR2G
NCV7720DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
LM317MBDT
LM317MBDT
onsemi
IC REG LINEAR POS ADJ 500MA DPAK
NCV86601BDT50RKG
NCV86601BDT50RKG
onsemi
IC REG LINEAR 5V 150MA DPAK-5