MW7IC2020NT1
  • Share:

NXP USA Inc. MW7IC2020NT1

Manufacturer No:
MW7IC2020NT1
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF MOSFET LDMOS 28V 24PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MW7IC2020NT1 is a high-performance RF power amplifier module manufactured by NXP USA Inc. This device is part of the LDMOS (Laterally Diffused Metal Oxide Semiconductor) family and is designed for wideband RF applications. It operates within the frequency range of 1805 to 2170 MHz, making it suitable for various cellular base station modulation formats. The amplifier is characterized by its high gain, integrated quiescent current temperature compensation, and on-chip matching, which simplifies the design process for RF engineers.

Key Specifications

Parameter Value Unit
Manufacturer NXP USA Inc.
Part Number MW7IC2020NT1
Frequency Range 1805 - 2170 MHz
Supply Voltage (Vd Max) 28 V
Rated Voltage Operation Up to 65 V
Output Power 2.4 W
Gain 32.6 dB
P1dB 43 dBm
Transistor Type LDMOS
Package 24-PQFN (8x8)
Operating Junction Temperature -65 to +150 °C

Key Features

  • High gain of 32.6 dB, ensuring strong signal amplification.
  • On-chip matching for 50 Ohm input, DC blocked, simplifying the design process.
  • Integrated quiescent current temperature compensation with enable/disable function.
  • Integrated ESD protection for enhanced reliability.
  • Capable of handling 10:1 VSWR, ensuring robust performance under various load conditions.
  • Multi-stage structure rated for 26 to 32 Volt operation.

Applications

The MW7IC2020NT1 is primarily used in RF power amplifier applications, particularly in cellular base stations. It supports various cellular base station modulation formats and is suitable for wideband RF applications. Other potential uses include:

  • Wireless communication systems.
  • RF transmitters and receivers.
  • Base station equipment.
  • Telecommunication infrastructure.

Q & A

  1. What is the frequency range of the MW7IC2020NT1?

    The MW7IC2020NT1 operates within the frequency range of 1805 to 2170 MHz.

  2. What is the maximum supply voltage for the MW7IC2020NT1?

    The maximum supply voltage is 28 V, with rated operation up to 65 V.

  3. What is the output power of the MW7IC2020NT1?

    The output power is 2.4 W.

  4. What type of transistor is used in the MW7IC2020NT1?

    The MW7IC2020NT1 uses LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology.

  5. What is the package type of the MW7IC2020NT1?

    The package type is 24-PQFN (8x8).

  6. Does the MW7IC2020NT1 have integrated ESD protection?
  7. What is the operating junction temperature range for the MW7IC2020NT1?

    The operating junction temperature range is -65 to +150 °C.

  8. Can the MW7IC2020NT1 handle high VSWR conditions?
  9. What are the typical applications of the MW7IC2020NT1?

    The MW7IC2020NT1 is typically used in cellular base stations, wireless communication systems, RF transmitters and receivers, and telecommunication infrastructure.

  10. Is the MW7IC2020NT1 still in production?

    No, the MW7IC2020NT1 is no longer manufactured, but replacement parts are available.

Product Attributes

Transistor Type:LDMOS
Frequency:2.14GHz
Gain:32.6dB
Voltage - Test:28 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:40 mA
Power - Output:2.4W
Voltage - Rated:65 V
Package / Case:24-PowerQFN
Supplier Device Package:24-PQFN (8x8)
0 Remaining View Similar

In Stock

$40.46
7

Please send RFQ , we will respond immediately.

Related Product By Categories

BLF647P,112
BLF647P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121A
BLF7G20LS-90P,112
BLF7G20LS-90P,112
NXP USA Inc.
RF PFET, 2-ELEMENT, L BAND, SILI
2SK3557-7-TB-E
2SK3557-7-TB-E
onsemi
RF MOSFET N-CH JFET 5V 3CP
BLF6G10LS-200RN,11
BLF6G10LS-200RN,11
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT502B
MRFE6VP5600HR6
MRFE6VP5600HR6
NXP USA Inc.
FET RF 2CH 130V 230MHZ NI1230
BLF578,112
BLF578,112
Ampleon USA Inc.
RF FET LDMOS 110V 24DB SOT539A
BLF888DU
BLF888DU
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539A
BLF8G22LS-220U
BLF8G22LS-220U
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
BLF888AS,112
BLF888AS,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539B
BF909A,215
BF909A,215
NXP USA Inc.
MOSFET N-CH SOT-143B
BF909WR,115
BF909WR,115
NXP USA Inc.
MOSFET N-CH 7V 40MA SOT343
BF861B
BF861B
NXP USA Inc.
SMALL SIGNAL FIELD-EFFECT TRANSI

Related Product By Brand

BC856BT115
BC856BT115
NXP USA Inc.
TRANS PNP 65V 0.1A SC75
PCF85063TP/1Z
PCF85063TP/1Z
NXP USA Inc.
IC RTC CLK/CALENDAR I2C 8-SON
MK10DX128VLH7
MK10DX128VLH7
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 64LQFP
S9S12G48AMLF
S9S12G48AMLF
NXP USA Inc.
IC MCU 16BIT 48KB FLASH 48LQFP
S9S12G64ACLH
S9S12G64ACLH
NXP USA Inc.
IC MCU 16BIT 64KB FLASH 64LQFP
MK40DX256VLK7
MK40DX256VLK7
NXP USA Inc.
IC MCU 32BIT 256KB FLASH 80FQFP
MCZ33904C5EKR2
MCZ33904C5EKR2
NXP USA Inc.
IC INTERFACE SPECIALIZED 32SOIC
TDF8532HH/N2K
TDF8532HH/N2K
NXP USA Inc.
BAP3 DIE1
SA5212AD,602
SA5212AD,602
NXP USA Inc.
IC TRANSIMPEDANCE 1 CIRCUIT 8SO
74LVC1G04GW/DG125
74LVC1G04GW/DG125
NXP USA Inc.
INVERTER, LVC/LCX/Z SERIES
MKW36A512VFP4
MKW36A512VFP4
NXP USA Inc.
KINETIS W 32-BIT MCU ARM CORTEX-
MPXHZ6115AC6T1
MPXHZ6115AC6T1
NXP USA Inc.
SENSOR ABS PRESS 16.7PSI MAX