A2T27S020GNR1
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NXP USA Inc. A2T27S020GNR1

Manufacturer No:
A2T27S020GNR1
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
AIRFAST RF POWER LDMOS TRANSISTO
Delivery:
Payment:
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Product Introduction

Overview

The A2T27S020GNR1 is a high-performance RF power LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor designed by NXP USA Inc. This device is optimized for cellular base station applications, covering a wide frequency range of 400 to 2700 MHz. It is part of the Airfast RF power transistor family, known for its reliability and efficiency in high-power RF applications.

Key Specifications

ParameterSymbolValueUnit
Drain-Source VoltageVDSS–0.5, +65Vdc
Gate-Source VoltageVGS–6.0, +10Vdc
Operating VoltageVDD32, +0Vdc
Storage Temperature RangeTstg–65 to +150°C
Case Operating Temperature RangeTC–40 to +150°C
Operating Junction Temperature RangeTJ–40 to 225°C
Average Output PowerPout2.5W
Package TypeTO-270BA
Moisture Sensitivity Level (MSL)3 (168 hours)

Key Features

  • High average output power of 2.5 W, suitable for high-power RF applications.
  • Wide frequency range of 400 to 2700 MHz, making it versatile for various cellular base station bands.
  • High drain efficiency and power gain, ensuring efficient operation.
  • Robust thermal characteristics with a case operating temperature range of –40 to +150°C.
  • Compliant with EU RoHS and Halogen Free standards, ensuring environmental sustainability.

Applications

The A2T27S020GNR1 is primarily designed for cellular base station applications, including but not limited to:

  • Cellular infrastructure (base stations, repeaters, etc.).
  • Wireless communication systems.
  • RF power amplifiers in various frequency bands.

Q & A

  1. What is the frequency range of the A2T27S020GNR1? The frequency range is 400 to 2700 MHz.
  2. What is the average output power of the A2T27S020GNR1? The average output power is 2.5 W.
  3. What is the package type of the A2T27S020GNR1? The package type is TO-270BA.
  4. What is the moisture sensitivity level (MSL) of the A2T27S020GNR1? The MSL is 3 (168 hours).
  5. Is the A2T27S020GNR1 compliant with EU RoHS and Halogen Free standards? Yes, it is compliant with both EU RoHS and Halogen Free standards.
  6. What are the typical applications of the A2T27S020GNR1? The typical applications include cellular base stations, wireless communication systems, and RF power amplifiers.
  7. What is the operating voltage range of the A2T27S020GNR1? The operating voltage range is 32 Vdc.
  8. What is the storage temperature range of the A2T27S020GNR1? The storage temperature range is –65 to +150°C.
  9. What is the case operating temperature range of the A2T27S020GNR1? The case operating temperature range is –40 to +150°C.
  10. What is the operating junction temperature range of the A2T27S020GNR1? The operating junction temperature range is –40 to 225°C.

Product Attributes

Transistor Type:LDMOS
Frequency:400MHz ~ 2.7GHz
Gain:21dB
Voltage - Test:28 V
Current Rating (Amps):10µA
Noise Figure:- 
Current - Test:185 mA
Power - Output:20W
Voltage - Rated:65 V
Package / Case:TO-270BA
Supplier Device Package:TO-270-2 GULL
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Same Series
A2T27S020NR1
A2T27S020NR1
AIRFAST RF POWER LDMOS TRANSISTO

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