Overview
The NE5550979A-A is a high-performance Silicon Power LDMOS FET produced by CEL. This device is designed for use in high-power radio frequency (RF) applications, particularly in the VHF to UHF frequency bands. It is known for its high output power, high power added efficiency, and high linear gain, making it suitable for various RF power amplifier systems.
Key Specifications
| Parameter | Symbol | Test Conditions | MIN. | TYP. | MAX. | Unit |
|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDS | - | 7.5 | 9.0 | V | |
| Gate to Source Voltage | VGS | - | 1.65 | 2.85 | V | |
| Drain Current | IDS | - | 1.7 | - | A | |
| Input Power | Pin | f = 460 MHz, VDS = 7.5 V | - | 25 | 30 | dBm |
| Output Power | Pout | VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm | - | 39.5 | - | dBm |
| Power Added Efficiency | ηadd | VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm | - | 66% | - | % |
| Linear Gain | GL | VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm | - | 22 | - | dB |
| ESD Tolerance | - | IEC61000-4-2, Contact discharge | - | - | > 8 kV | - |
Key Features
- High Output Power: The NE5550979A-A offers a high output power of 39.5 dBm (typical) at VDS = 7.5 V, IDset = 200 mA, and f = 460 MHz with an input power of 25 dBm.
- High Power Added Efficiency: It achieves a high power added efficiency of 66% (typical) under the same conditions.
- High Linear Gain: The device provides a linear gain of 22 dB (typical) at VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, and Pin = 10 dBm.
- High ESD Tolerance: It has an ESD tolerance greater than 8 kV according to IEC61000-4-2, contact discharge.
Applications
- 150 MHz Band Radio System: Suitable for radio systems operating in the 150 MHz frequency band.
- 460 MHz Band Radio System: Ideal for radio systems operating in the 460 MHz frequency band.
- 900 MHz Band Radio System: Also suitable for radio systems operating in the 900 MHz frequency band.
Q & A
- What is the typical output power of the NE5550979A-A?
The typical output power is 39.5 dBm at VDS = 7.5 V, IDset = 200 mA, and f = 460 MHz with an input power of 25 dBm.
- What is the power added efficiency of the NE5550979A-A?
The power added efficiency is typically 66% under the same conditions as the output power.
- What is the linear gain of the NE5550979A-A?
The linear gain is typically 22 dB at VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, and Pin = 10 dBm.
- What is the ESD tolerance of the NE5550979A-A?
The ESD tolerance is greater than 8 kV according to IEC61000-4-2, contact discharge.
- What are the recommended operating voltage ranges for VDS and VGS?
The recommended operating range for VDS is 7.5 to 9.0 V, and for VGS is 1.65 to 2.85 V.
- What is the maximum drain current rating?
The maximum drain current rating is 3.0 A.
- What is the total power dissipation rating?
The total power dissipation rating is 25 W.
- What are the typical applications of the NE5550979A-A?
It is typically used in 150 MHz, 460 MHz, and 900 MHz band radio systems.
- How should the device be handled to avoid damage?
The device should be handled with precautions to avoid electrostatic discharge, as it is sensitive to ESD.
- What is the storage temperature range for the NE5550979A-A?
The storage temperature range is from -55°C to +150°C.
