Overview
The A3T18H400W23SR6 is a high-performance RF power LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor manufactured by NXP USA Inc. This component is designed to meet the demanding requirements of modern RF power applications, particularly in cellular base stations and other high-power RF systems.
Key Specifications
| Parameter | Value |
|---|---|
| Voltage Rating | 28 V |
| Current Rating | 300 mA |
| Frequency Range | 1.805 GHz ~ 1.88 GHz |
| Gain | 16.8 dB |
| Power Handling | 170 W ACP (Average Channel Power) |
| Package Type | ACP-1230S-4L2S |
Key Features
- High power handling capability of up to 170 W ACP.
- Operates within the frequency range of 1.805 GHz to 1.88 GHz, making it suitable for various cellular band applications.
- High gain of 16.8 dB, ensuring efficient signal amplification.
- Low power consumption and high efficiency, ideal for power control circuits.
- Robust and reliable design, suitable for high-performance RF systems.
Applications
The A3T18H400W23SR6 is widely used in cellular base station applications, including but not limited to:
- Cellular infrastructure (base stations, repeaters, etc.).
- High-power RF amplifiers.
- Power control circuits in various electronic systems.
- Other high-frequency communication systems requiring high power and efficiency.
Q & A
- What is the voltage rating of the A3T18H400W23SR6?
The voltage rating is 28 V. - What is the current rating of this transistor?
The current rating is 300 mA. - What is the frequency range of operation for this transistor?
The frequency range is from 1.805 GHz to 1.88 GHz. - What is the gain of the A3T18H400W23SR6?
The gain is 16.8 dB. - What is the power handling capability of this transistor?
The power handling capability is up to 170 W ACP. - What package type does the A3T18H400W23SR6 come in?
The package type is ACP-1230S-4L2S. - What are the primary applications of the A3T18H400W23SR6?
The primary applications include cellular base stations, high-power RF amplifiers, and power control circuits. - Why is this transistor suitable for cellular base station applications?
It is suitable due to its high power handling, high gain, and efficient operation within the required frequency range. - Is the A3T18H400W23SR6 reliable for high-performance RF systems?
Yes, it is designed to be robust and reliable for high-performance RF systems. - Where can I find detailed specifications for the A3T18H400W23SR6?
Detailed specifications can be found on the official NXP website, as well as on distributor websites like Digi-Key and Mouser.
