A2T21H410-24SR6
  • Share:

NXP USA Inc. A2T21H410-24SR6

Manufacturer No:
A2T21H410-24SR6
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
IC TRANS RF LDMOS
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The A2T21H410-24SR6 is a high-performance RF power LDMOS transistor designed by NXP USA Inc. This device is specifically tailored for cellular base station applications, operating within the frequency range of 2110 to 2170 MHz. It is part of the Airfast series, known for its reliability and efficiency in high-power RF applications. Although the A2T21H410-24SR6 is currently obsolete and no longer manufactured, it remains a significant component in legacy systems and for those seeking to understand high-power RF transistor technology.

Key Specifications

ParameterValueUnit
Operating Frequency2110 - 2170MHz
Output Power (Average)72W
Output Power at 1 dB Compression Point (P1dB)316W
Output Power at 3 dB Compression Point (P3dB)447W
Drain-Source Voltage (V_DSS)-0.5 to +65Vdc
Gate-Source Voltage (V_GS)-6.0 to +10Vdc
Operating Voltage (V_DD)0 to +32Vdc
Gain15.6dB
Minimum Operating Temperature-40C
Maximum Operating Temperature+85C

Key Features

  • High Power Capability: The A2T21H410-24SR6 offers high output power, making it suitable for demanding cellular base station applications.
  • Asymmetrical Doherty Design: This transistor is designed using the asymmetrical Doherty architecture, which enhances efficiency and linearity.
  • Wide Frequency Range: It operates across a frequency range of 2110 to 2170 MHz, covering various cellular bands.
  • Low Distortion: The device is optimized for low distortion and high linearity, which is crucial for maintaining signal integrity in cellular communications.
  • Robust Temperature Stability: The transistor exhibits stable performance over a wide temperature range from -40°C to +85°C.

Applications

The A2T21H410-24SR6 is primarily designed for cellular base station applications. It is particularly useful in systems that require high power and high efficiency, such as:

  • Cellular base stations
  • Wireless communication systems
  • RF power amplifiers
  • Systems requiring Digital Predistortion Error Correction

Q & A

  1. What is the operating frequency range of the A2T21H410-24SR6? The operating frequency range is 2110 to 2170 MHz.
  2. What is the average output power of the A2T21H410-24SR6? The average output power is 72 W.
  3. What is the gain of the A2T21H410-24SR6? The gain is approximately 15.6 dB.
  4. Is the A2T21H410-24SR6 still in production? No, the A2T21H410-24SR6 is obsolete and no longer manufactured.
  5. What is the minimum operating temperature of the A2T21H410-24SR6? The minimum operating temperature is -40°C.
  6. What is the maximum operating temperature of the A2T21H410-24SR6? The maximum operating temperature is +85°C.
  7. What type of design is used in the A2T21H410-24SR6? The transistor uses an asymmetrical Doherty design.
  8. What are the typical applications of the A2T21H410-24SR6? Typical applications include cellular base stations and wireless communication systems.
  9. What are the key benefits of using the A2T21H410-24SR6 in RF power amplifiers? Key benefits include high power capability, low distortion, and robust temperature stability.
  10. Where can I find substitutes for the A2T21H410-24SR6? Substitutes can be found through distributors like Digi-Key and Mouser, which list similar products.

Product Attributes

Transistor Type:LDMOS (Dual)
Frequency:2.17GHz
Gain:15.6dB
Voltage - Test:28 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:600 mA
Power - Output:72W
Voltage - Rated:65 V
Package / Case:NI-1230-4LS2L
Supplier Device Package:NI-1230-4LS2L
0 Remaining View Similar

In Stock

-
268

Please send RFQ , we will respond immediately.

Related Product By Categories

AFT18H357-24NR6
AFT18H357-24NR6
Freescale Semiconductor
AIRFAST RF POWER LDMOS TRANSISTO
BLF578,112
BLF578,112
Ampleon USA Inc.
RF FET LDMOS 110V 24DB SOT539A
BLF578XRS,112
BLF578XRS,112
Ampleon USA Inc.
RF FET LDMOS 110V 23.5DB SOT539B
BLF7G22LS-130,112
BLF7G22LS-130,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF3G21-6,135
BLF3G21-6,135
Ampleon USA Inc.
RF FET LDMOS 65V 15.5DB SOT538A
BF998,215
BF998,215
NXP USA Inc.
MOSFET NCH DUAL GATE 12V SOT143B
BF1202WR,135
BF1202WR,135
NXP USA Inc.
MOSFET N-CH DUAL GATE 4DFP
BLF6G27-10G,112
BLF6G27-10G,112
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C
BLF7G15LS-300P,112
BLF7G15LS-300P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
NE5550234-AZ
NE5550234-AZ
CEL
FET RF 30V 900MHZ 3MINIMOLD
BLF8G22LS-160BVX
BLF8G22LS-160BVX
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1244B
MMBF5485_NB50012
MMBF5485_NB50012
onsemi
IC POWER MANAGEMENT

Related Product By Brand

MC912DG128ACPVE
MC912DG128ACPVE
NXP USA Inc.
IC MCU 16BIT 128KB FLASH 112LQFP
MC9S12XEP100MAL
MC9S12XEP100MAL
NXP USA Inc.
IC MCU 16BIT 1MB FLASH 112LQFP
SPC5604BF2VLL4
SPC5604BF2VLL4
NXP USA Inc.
IC MCU 32BIT 512KB FLASH 100LQFP
LS1028AXN7PQA
LS1028AXN7PQA
NXP USA Inc.
LS1028A-1500 XT NO SEC
MCIMX6S5EVM10AB
MCIMX6S5EVM10AB
NXP USA Inc.
IC MPU I.MX6S 1.0GHZ 624MAPBGA
74HCT4053PW-Q100118
74HCT4053PW-Q100118
NXP USA Inc.
SINGLE-ENDED MUX,TSSOP16
TJA1021T/20/C,118
TJA1021T/20/C,118
NXP USA Inc.
IC TRANSCEIVER FULL 1/1 8SO
UJA1169ATK/X/FZ
UJA1169ATK/X/FZ
NXP USA Inc.
IC MINI-CAN SYSTEM BASIS CHIP
TDA7052BT/N1,112
TDA7052BT/N1,112
NXP USA Inc.
IC AMP CLASS AB MONO 550MW 8SO
74HC259N,652
74HC259N,652
NXP USA Inc.
IC ADDRESSABLE LATCH 8BIT 16DIP
TEA18363T/2J
TEA18363T/2J
NXP USA Inc.
IC OFFLINE SWITCH FLYBACK 8SO
BGU6005115
BGU6005115
NXP USA Inc.
LOW NOISE AMPLIFIER MMIC