A2T21H410-24SR6
  • Share:

NXP USA Inc. A2T21H410-24SR6

Manufacturer No:
A2T21H410-24SR6
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
IC TRANS RF LDMOS
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The A2T21H410-24SR6 is a high-performance RF power LDMOS transistor designed by NXP USA Inc. This device is specifically tailored for cellular base station applications, operating within the frequency range of 2110 to 2170 MHz. It is part of the Airfast series, known for its reliability and efficiency in high-power RF applications. Although the A2T21H410-24SR6 is currently obsolete and no longer manufactured, it remains a significant component in legacy systems and for those seeking to understand high-power RF transistor technology.

Key Specifications

ParameterValueUnit
Operating Frequency2110 - 2170MHz
Output Power (Average)72W
Output Power at 1 dB Compression Point (P1dB)316W
Output Power at 3 dB Compression Point (P3dB)447W
Drain-Source Voltage (V_DSS)-0.5 to +65Vdc
Gate-Source Voltage (V_GS)-6.0 to +10Vdc
Operating Voltage (V_DD)0 to +32Vdc
Gain15.6dB
Minimum Operating Temperature-40C
Maximum Operating Temperature+85C

Key Features

  • High Power Capability: The A2T21H410-24SR6 offers high output power, making it suitable for demanding cellular base station applications.
  • Asymmetrical Doherty Design: This transistor is designed using the asymmetrical Doherty architecture, which enhances efficiency and linearity.
  • Wide Frequency Range: It operates across a frequency range of 2110 to 2170 MHz, covering various cellular bands.
  • Low Distortion: The device is optimized for low distortion and high linearity, which is crucial for maintaining signal integrity in cellular communications.
  • Robust Temperature Stability: The transistor exhibits stable performance over a wide temperature range from -40°C to +85°C.

Applications

The A2T21H410-24SR6 is primarily designed for cellular base station applications. It is particularly useful in systems that require high power and high efficiency, such as:

  • Cellular base stations
  • Wireless communication systems
  • RF power amplifiers
  • Systems requiring Digital Predistortion Error Correction

Q & A

  1. What is the operating frequency range of the A2T21H410-24SR6? The operating frequency range is 2110 to 2170 MHz.
  2. What is the average output power of the A2T21H410-24SR6? The average output power is 72 W.
  3. What is the gain of the A2T21H410-24SR6? The gain is approximately 15.6 dB.
  4. Is the A2T21H410-24SR6 still in production? No, the A2T21H410-24SR6 is obsolete and no longer manufactured.
  5. What is the minimum operating temperature of the A2T21H410-24SR6? The minimum operating temperature is -40°C.
  6. What is the maximum operating temperature of the A2T21H410-24SR6? The maximum operating temperature is +85°C.
  7. What type of design is used in the A2T21H410-24SR6? The transistor uses an asymmetrical Doherty design.
  8. What are the typical applications of the A2T21H410-24SR6? Typical applications include cellular base stations and wireless communication systems.
  9. What are the key benefits of using the A2T21H410-24SR6 in RF power amplifiers? Key benefits include high power capability, low distortion, and robust temperature stability.
  10. Where can I find substitutes for the A2T21H410-24SR6? Substitutes can be found through distributors like Digi-Key and Mouser, which list similar products.

Product Attributes

Transistor Type:LDMOS (Dual)
Frequency:2.17GHz
Gain:15.6dB
Voltage - Test:28 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:600 mA
Power - Output:72W
Voltage - Rated:65 V
Package / Case:NI-1230-4LS2L
Supplier Device Package:NI-1230-4LS2L
0 Remaining View Similar

In Stock

-
268

Please send RFQ , we will respond immediately.

Related Product By Categories

MRF300AN
MRF300AN
NXP USA Inc.
RF MOSFET LDMOS 50V TO247
BLL6H0514-25,112
BLL6H0514-25,112
Ampleon USA Inc.
RF FET LDMOS 100V 21DB SOT467C
BLF888B,112
BLF888B,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539A
2SK3557-7-TB-E
2SK3557-7-TB-E
onsemi
RF MOSFET N-CH JFET 5V 3CP
PD55003TR-E
PD55003TR-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
BLF7G27LS-100,112
BLF7G27LS-100,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLF6G20LS-110,112
BLF6G20LS-110,112
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT502B
PD55003STR-E
PD55003STR-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
BLF6G20-180PN,112
BLF6G20-180PN,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539A
BLF8G22LS-160BV:11
BLF8G22LS-160BV:11
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1120B
NE5550279A-A
NE5550279A-A
CEL
FET RF 30V 900MHZ 79A
BF1107,235
BF1107,235
NXP USA Inc.
MOSFET N-CH 3V 10MA SOT23

Related Product By Brand

PESD5V0S1BSF/S500315
PESD5V0S1BSF/S500315
NXP USA Inc.
TVS DIODE
BAP51-02,315
BAP51-02,315
NXP USA Inc.
RF DIODE PIN 60V 715MW SOD523
BC817-25/DG215
BC817-25/DG215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
AFT05MS031NR1
AFT05MS031NR1
NXP USA Inc.
FET RF 40V 520MHZ TO-270-2
PMV45EN,215
PMV45EN,215
NXP USA Inc.
MOSFET N-CH 30V 5.4A TO236AB
SPC5745CBK1AMMJ6
SPC5745CBK1AMMJ6
NXP USA Inc.
IC MCU 32BIT 2MB FLSH 256MAPPBGA
PCA9554PW,118
PCA9554PW,118
NXP USA Inc.
IC I/O EXPANDER I2C 8B 16TSSOP
UJA1169ATK/X/FZ
UJA1169ATK/X/FZ
NXP USA Inc.
IC MINI-CAN SYSTEM BASIS CHIP
UJA1075ATW/3V3WD,1
UJA1075ATW/3V3WD,1
NXP USA Inc.
IC INTFACE SPECIALIZED 32HTSSOP
NX5P3001UKZ
NX5P3001UKZ
NXP USA Inc.
IC PWR SWITCH N-CHAN 1:1 12WLCSP
MMDS09254HT1
MMDS09254HT1
NXP USA Inc.
ADVANCED DOHERTY ALIGNMENT MODUL
SA605DK,112
SA605DK,112
NXP USA Inc.
RF RX ASK/FSK 0HZ-500MHZ 20SSOP