Overview
The MRF300BN is a high-performance, wideband RF power LDMOS transistor manufactured by NXP USA Inc. This device is designed to operate over a broad frequency range of 1.8 to 250 MHz and is capable of delivering up to 300 watts of continuous wave (CW) power at 50 volts. The MRF300BN is known for its ruggedness and high efficiency, making it suitable for various high-power RF applications.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | -0.5, +133 | Vdc |
| Gate-Source Voltage | VGS | -6.0, +10 | Vdc |
| Operating Voltage | VDD | 50 | Vdc |
| Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) | VDS(on) | 0.16 | Vdc |
| Forward Transconductance (VDS = 10 Vdc, ID = 30 Adc) | gfs | 28 | S |
| Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) | Crss | 2.31 | pF |
| Output Capacitance | Coss | - | pF |
| Storage Temperature Range | Tstg | -65 to +150 | °C |
Key Features
- High power output: Up to 300 watts CW at 50 volts.
- Broad frequency range: Operates from 1.8 to 250 MHz.
- High efficiency and ruggedness.
- Low drain-source on-voltage (VDS(on)) of 0.16 Vdc.
- High forward transconductance (gfs) of 28 S.
- Available in TO-247-3L package.
Applications
- HF and VHF communications.
- Industrial, Scientific, and Medical (ISM) applications.
- Broadcast and aerospace applications.
- Laser generation, plasma etching, and particle accelerators.
- MRI and other medical applications.
- Industrial heating, welding, and drying systems.
- Radio and VHF TV broadcast.
- Switch mode power supplies.
Q & A
- What is the maximum power output of the MRF300BN? The MRF300BN can deliver up to 300 watts of continuous wave (CW) power.
- What is the operating voltage range of the MRF300BN? The operating voltage is 50 Vdc.
- What is the frequency range of the MRF300BN? The device operates from 1.8 to 250 MHz.
- What package type is the MRF300BN available in? The MRF300BN is available in the TO-247-3L package.
- What are some typical applications of the MRF300BN? Applications include HF and VHF communications, ISM, broadcast, aerospace, laser generation, plasma etching, and medical applications.
- What is the drain-source on-voltage (VDS(on)) of the MRF300BN? The drain-source on-voltage is 0.16 Vdc.
- What is the forward transconductance (gfs) of the MRF300BN? The forward transconductance is 28 S.
- What is the storage temperature range for the MRF300BN? The storage temperature range is -65 to +150°C.
- Is the MRF300BN suitable for high-power RF applications? Yes, it is designed for high-power RF applications due to its ruggedness and high efficiency.
- Where can I find design files and models for the MRF300BN? Design files and models are available on the NXP Semiconductors website.
