BAS16/DG215
  • Share:

NXP USA Inc. BAS16/DG215

Manufacturer No:
BAS16/DG215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
RECTIFIER DIODE, 0.215A, 100V
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16/DG215, produced by NXP USA Inc. (now known as Nexperia), is a high-speed switching diode designed for various electronic applications. This diode is encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package, making it suitable for compact and efficient designs. It is characterized by its high switching speed, low capacitance, and low leakage current, making it ideal for high-speed switching and general-purpose switching applications.

Key Specifications

ParameterValue
Diode ConfigurationSingle
Repetitive Peak Reverse Voltage (VRRM)100 V
Average Forward Current (IF)215 mA
Forward Voltage Max (VF)1.25 V
Reverse Recovery Time (trr)≤ 4 ns
Forward Surge Current (IFSM)4 A
Operating Temperature Max150°C
No. of Pins3 Pins
Diode Case StyleTO-236AB (SOT23)
Diode MountingSurface Mount
QualificationAEC-Q101

Key Features

  • High switching speed: trr ≤ 4 ns
  • Low capacitance and low leakage current
  • Reverse voltage: VR ≤ 100 V
  • Repetitive peak reverse voltage: VRRM ≤ 100 V
  • Low forward voltage drop (VF = 1.25 V)
  • High forward surge current capability (IFSM = 4 A)
  • Operating junction temperature range from -65°C to 150°C

Applications

The BAS16/DG215 is typically used in high-speed switching and general-purpose switching applications. It is suitable for various industries, including automotive, industrial, power, computing, consumer, mobile, and wearables. Its high-speed switching capabilities and low leakage current make it an ideal choice for applications requiring efficient and reliable switching performance.

Q & A

  1. What is the package type of the BAS16/DG215 diode?
    The BAS16/DG215 diode is encapsulated in a SOT23 Surface-Mounted Device (SMD) plastic package.
  2. What is the repetitive peak reverse voltage of the BAS16/DG215?
    The repetitive peak reverse voltage (VRRM) is 100 V.
  3. What is the average forward current of the BAS16/DG215?
    The average forward current (IF) is 215 mA.
  4. What is the reverse recovery time of the BAS16/DG215?
    The reverse recovery time (trr) is ≤ 4 ns.
  5. What is the forward voltage drop of the BAS16/DG215?
    The forward voltage drop (VF) is 1.25 V.
  6. Is the BAS16/DG215 qualified for automotive applications?
    Yes, the BAS16/DG215 is qualified to AEC-Q101 standards, making it suitable for automotive applications.
  7. What is the operating temperature range of the BAS16/DG215?
    The operating junction temperature range is from -65°C to 150°C.
  8. Is the BAS16/DG215 RoHS compliant?
    Yes, the BAS16/DG215 is RoHS compliant.
  9. What are the typical applications of the BAS16/DG215?
    The BAS16/DG215 is used in high-speed switching and general-purpose switching applications across various industries.
  10. What is the forward surge current capability of the BAS16/DG215?
    The forward surge current (IFSM) is 4 A.

Product Attributes

Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
Operating Temperature - Junction:- 
0 Remaining View Similar

In Stock

$0.02
24,210

Please send RFQ , we will respond immediately.

Same Series
DD15S200V3S/AA
DD15S200V3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S100T2X
CBC46W4S100T2X
CONN D-SUB RCPT 46POS CRIMP
DD15S20LVLX
DD15S20LVLX
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE0/AA
CBC13W3S10HE0/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20JT2S/AA
DD15S20JT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HE2Z/AA
DD26M20HE2Z/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20JV5S
DD15S20JV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0V3X/AA
DD26S2S0V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T20/AA
DD26S2S50T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T2X
DD44S3200T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S50TX/AA
DD44S32S50TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR
CBC47W1S1S50V5S/AA
CBC47W1S1S50V5S/AA
CONN D-SUB RCPT 47POS CRIMP

Related Product By Categories

BAT54WS_R1_00001
BAT54WS_R1_00001
Panjit International Inc.
SOD-323, SKY
STTH5L06RL
STTH5L06RL
STMicroelectronics
DIODE GEN PURP 600V 5A DO201AD
MUR180EG
MUR180EG
onsemi
DIODE GEN PURP 800V 1A AXIAL
STTH5L06B-TR
STTH5L06B-TR
STMicroelectronics
DIODE GEN PURP 600V 5A DPAK
BAV199/ZL215
BAV199/ZL215
Nexperia USA Inc.
BAV199W - RECTIFIER DIODE
PMEG3002ESF315
PMEG3002ESF315
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY
1N4148WQ-13-F
1N4148WQ-13-F
Diodes Incorporated
SWITCHING DIODE SOD123 T&R 10K
NRVBA210LNT3G
NRVBA210LNT3G
onsemi
DIODE SCHOTTKY 2A 10V SMA2
BAS16XV2T1
BAS16XV2T1
onsemi
DIODE SWITCH 200MA 75V SOD523
1N4002G R0G
1N4002G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
BAS316-QF
BAS316-QF
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
BAT54T-HF
BAT54T-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23

Related Product By Brand

BAS216,115
BAS216,115
NXP USA Inc.
DIODE GEN PURP 75V 250MA SOD2
BZX84-C13/DG/B3215
BZX84-C13/DG/B3215
NXP USA Inc.
DIODE ZENER
BZX84J-C27/L115
BZX84J-C27/L115
NXP USA Inc.
DIODE ZENER
BFG520,235
BFG520,235
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143B
AFT05MS031NR1
AFT05MS031NR1
NXP USA Inc.
FET RF 40V 520MHZ TO-270-2
SPC5604BF2VLL4
SPC5604BF2VLL4
NXP USA Inc.
IC MCU 32BIT 512KB FLASH 100LQFP
MIMX8ML6CVNKZAB
MIMX8ML6CVNKZAB
NXP USA Inc.
IC I.MX 8M PLUS QUAD BGA
NX3L1G3157GM,115
NX3L1G3157GM,115
NXP USA Inc.
IC SWITCH SPDT 6XSON
UJA1169ATK/X/FZ
UJA1169ATK/X/FZ
NXP USA Inc.
IC MINI-CAN SYSTEM BASIS CHIP
UJA1075ATW/3V3WD,1
UJA1075ATW/3V3WD,1
NXP USA Inc.
IC INTFACE SPECIALIZED 32HTSSOP
MMPF0200F6AEP
MMPF0200F6AEP
NXP USA Inc.
IC REG CONV I.MX6 11OUT 56HVQFN
BGU7224X
BGU7224X
NXP USA Inc.
IC RF AMP ISM 2.4GHZ 6HXSON