BAS16/DG215
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NXP USA Inc. BAS16/DG215

Manufacturer No:
BAS16/DG215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
RECTIFIER DIODE, 0.215A, 100V
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16/DG215, produced by NXP USA Inc. (now known as Nexperia), is a high-speed switching diode designed for various electronic applications. This diode is encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package, making it suitable for compact and efficient designs. It is characterized by its high switching speed, low capacitance, and low leakage current, making it ideal for high-speed switching and general-purpose switching applications.

Key Specifications

ParameterValue
Diode ConfigurationSingle
Repetitive Peak Reverse Voltage (VRRM)100 V
Average Forward Current (IF)215 mA
Forward Voltage Max (VF)1.25 V
Reverse Recovery Time (trr)≤ 4 ns
Forward Surge Current (IFSM)4 A
Operating Temperature Max150°C
No. of Pins3 Pins
Diode Case StyleTO-236AB (SOT23)
Diode MountingSurface Mount
QualificationAEC-Q101

Key Features

  • High switching speed: trr ≤ 4 ns
  • Low capacitance and low leakage current
  • Reverse voltage: VR ≤ 100 V
  • Repetitive peak reverse voltage: VRRM ≤ 100 V
  • Low forward voltage drop (VF = 1.25 V)
  • High forward surge current capability (IFSM = 4 A)
  • Operating junction temperature range from -65°C to 150°C

Applications

The BAS16/DG215 is typically used in high-speed switching and general-purpose switching applications. It is suitable for various industries, including automotive, industrial, power, computing, consumer, mobile, and wearables. Its high-speed switching capabilities and low leakage current make it an ideal choice for applications requiring efficient and reliable switching performance.

Q & A

  1. What is the package type of the BAS16/DG215 diode?
    The BAS16/DG215 diode is encapsulated in a SOT23 Surface-Mounted Device (SMD) plastic package.
  2. What is the repetitive peak reverse voltage of the BAS16/DG215?
    The repetitive peak reverse voltage (VRRM) is 100 V.
  3. What is the average forward current of the BAS16/DG215?
    The average forward current (IF) is 215 mA.
  4. What is the reverse recovery time of the BAS16/DG215?
    The reverse recovery time (trr) is ≤ 4 ns.
  5. What is the forward voltage drop of the BAS16/DG215?
    The forward voltage drop (VF) is 1.25 V.
  6. Is the BAS16/DG215 qualified for automotive applications?
    Yes, the BAS16/DG215 is qualified to AEC-Q101 standards, making it suitable for automotive applications.
  7. What is the operating temperature range of the BAS16/DG215?
    The operating junction temperature range is from -65°C to 150°C.
  8. Is the BAS16/DG215 RoHS compliant?
    Yes, the BAS16/DG215 is RoHS compliant.
  9. What are the typical applications of the BAS16/DG215?
    The BAS16/DG215 is used in high-speed switching and general-purpose switching applications across various industries.
  10. What is the forward surge current capability of the BAS16/DG215?
    The forward surge current (IFSM) is 4 A.

Product Attributes

Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
Operating Temperature - Junction:- 
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