Overview
The PD57006TR-E is a high-performance RF power transistor designed by STMicroelectronics. This device is part of the LDMOS (Lateral Double-Diffused MOSFET) family and is specifically tailored for high-gain, broad-band commercial and industrial applications. It operates in a common source configuration and is known for its excellent thermal stability, linearity, and reliability.
The PD57006TR-E is packaged in the PowerSO-10RF, a JEDEC-approved high-power SMD package that offers high reliability and ease of assembly. This transistor is particularly suited for applications such as car mobile radio due to its superior linearity performance.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (V(BR)DSS) | 65 | V |
| Gate-source voltage (VGS) | ±20 | V |
| Drain current (ID) | 1 | A |
| Power dissipation (PDISS) @ TC = 70°C | 20 | W |
| Max. operating junction temperature (TJ) | 165 | °C |
| Storage temperature (TSTG) | -65 to +150 | °C |
| Junction-case thermal resistance (RthJC) | 5 | °C/W |
| Output power (POUT) @ 945 MHz / 28 V | 6 W with 15 dB gain |
Key Features
- Common source N-channel, enhancement-mode lateral field-effect RF power transistor.
- Designed for high gain and broad-band applications.
- Excellent thermal stability and linearity performance.
- Operates at 28 V in common source mode at frequencies up to 1 GHz.
- PowerSO-10RF plastic package, the first true SMD plastic RF power package, offering high reliability and ease of assembly.
- JEDEC-approved high-power SMD package.
- Optimized for RF needs with superior linearity, making it ideal for car mobile radio applications.
Applications
- High-gain, broad-band commercial and industrial RF applications.
- Car mobile radio systems.
- Other high-power RF amplification needs where linearity and reliability are critical.
Q & A
- What is the PD57006TR-E?
The PD57006TR-E is a high-performance RF power transistor from STMicroelectronics, designed for high-gain and broad-band applications.
- What package type does the PD57006TR-E use?
The PD57006TR-E is packaged in the PowerSO-10RF, a JEDEC-approved high-power SMD package.
- What are the maximum ratings for the PD57006TR-E?
The maximum ratings include a drain-source voltage of 65 V, gate-source voltage of ±20 V, and drain current of 1 A.
- What is the maximum operating junction temperature for the PD57006TR-E?
The maximum operating junction temperature is 165 °C.
- What are the typical applications for the PD57006TR-E?
Typical applications include high-gain, broad-band commercial and industrial RF applications, and car mobile radio systems.
- What is the output power of the PD57006TR-E at 945 MHz and 28 V?
The output power is 6 W with a gain of 15 dB at 945 MHz and 28 V.
- What is the thermal resistance of the PD57006TR-E?
The junction-case thermal resistance (RthJC) is 5 °C/W.
- Is the PD57006TR-E RoHS compliant?
- What is the storage temperature range for the PD57006TR-E?
The storage temperature range is -65 to +150 °C.
- Where can I find more detailed specifications and application notes for the PD57006TR-E?
More detailed specifications and application notes can be found on the STMicroelectronics website, specifically in the datasheet and application notes such as AN1294.
