Overview
The PD55025S-E is a high-performance RF power transistor designed by STMicroelectronics. This device is a common source N-channel, enhancement-mode lateral field-effect transistor (LDMOS) optimized for high gain and broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz, making it ideal for various RF applications, including car mobile radio systems. The transistor is housed in the PowerSO-10RF package, which is the first ST JEDEC-approved, high-power SMD package, offering excellent RF performance and ease of assembly.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (V(BR)DSS) | 40 | V |
| Gate-source voltage (VGS) | ± 20 | V |
| Drain current (ID) | 7 | A |
| Power dissipation (PDISS) @ TC = 70°C | 79 | W |
| Max. operating junction temperature (TJ) | 165 | °C |
| Storage temperature (TSTG) | -65 to +150 | °C |
| Junction-case thermal resistance (RthJC) | 1.2 | °C/W |
| Output power (POUT) @ VDD = 12.5 V, f = 500 MHz | 25 | W |
| Power gain (GP) @ VDD = 12.5 V, POUT = 25 W, f = 500 MHz | 14.5 | dB |
| Drain efficiency (hD) @ VDD = 12.5 V, POUT = 25 W, f = 500 MHz | 50 | % |
| Load mismatch (VSWR) @ VDD = 15.5 V, POUT = 25 W, f = 500 MHz | 20:1 |
Key Features
- Excellent thermal stability
- Common source configuration
- High gain and broad band performance
- Superior linearity performance, making it ideal for car mobile radio systems
- PowerSO-10RF package, the first ST JEDEC-approved, high-power SMD package, offering high reliability and ease of assembly
- Operates at frequencies up to 1 GHz
- High power dissipation capability
Applications
- Car mobile radio systems
- Commercial and industrial RF applications
- Broadband amplifiers
- RF power amplifiers in various communication systems
Q & A
- What is the maximum drain-source voltage for the PD55025S-E?
The maximum drain-source voltage (V(BR)DSS) is 40 V.
- What is the typical power gain of the PD55025S-E at 500 MHz?
The typical power gain (GP) at VDD = 12.5 V, POUT = 25 W, and f = 500 MHz is 14.5 dB.
- What is the maximum operating junction temperature for the PD55025S-E?
The maximum operating junction temperature (TJ) is 165°C.
- What package type is used for the PD55025S-E?
The device is housed in the PowerSO-10RF package.
- What are the storage temperature limits for the PD55025S-E?
The storage temperature (TSTG) range is -65 to +150°C.
- What is the typical output power of the PD55025S-E at 500 MHz?
The typical output power (POUT) at VDD = 12.5 V and f = 500 MHz is 25 W.
- What is the drain efficiency of the PD55025S-E at 500 MHz?
The drain efficiency (hD) at VDD = 12.5 V, POUT = 25 W, and f = 500 MHz is 50%.
- What is the load mismatch (VSWR) specification for the PD55025S-E?
The load mismatch (VSWR) at VDD = 15.5 V, POUT = 25 W, and f = 500 MHz is 20:1 for all phase angles.
- What are the key applications of the PD55025S-E?
The key applications include car mobile radio systems, commercial and industrial RF applications, and broadband amplifiers.
- What is the moisture sensitivity level (MSL) of the PD55025S-E?
The moisture sensitivity level (MSL) is rated as MSL 3 according to J-STD-020B.
