PD54008-E
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STMicroelectronics PD54008-E

Manufacturer No:
PD54008-E
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
FET RF 25V 500MHZ PWRSO10
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PD54008-E is a high-performance RF power transistor designed by STMicroelectronics. It is part of the LDMOS (Lateral Double-Diffused MOSFET) technology family, specifically the LdmoST Plastic series. This N-channel, enhancement-mode lateral field-effect RF power transistor is optimized for high gain and broadband commercial and industrial applications. It operates at a drain-source voltage of up to 25 V and can handle frequencies up to 1 GHz, making it suitable for a wide range of RF applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VBRDSS) 25 V
Gate-Source Voltage (VGS) -0.5 to +15 V
Drain Current (ID) 5 A
Power Dissipation (PDISS) at TCASE = 70°C 26.7 W
Maximum Operating Junction Temperature (TJ) 150 °C
Storage Temperature (TSTG) -65 to +150 °C
Junction to Case Thermal Resistance (RthJC) 3 °C/W
Output Power (P1dB) at 500 MHz 8 W
Power Gain (GP) at 500 MHz 15 dB
Drain Efficiency (ηD) at 500 MHz 50 %

Key Features

  • Excellent Thermal Stability: Ensures reliable operation under various thermal conditions.
  • Common Source Configuration: Suitable for a wide range of RF amplifier designs.
  • Broadband Performance: Operates effectively across a broad frequency range up to 1 GHz.
  • Leadless Plastic Package (PowerFLAT™): Compact and innovative packaging for improved thermal management and reduced size.
  • ESD Protection: Built-in protection against electrostatic discharge.
  • High Gain and Linearity: Ideal for applications requiring high signal integrity and low distortion.

Applications

  • Portable Radio Systems: Due to its high linearity and reliability, it is well-suited for portable radio applications.
  • Commercial and Industrial RF Amplifiers: Ideal for broadband commercial and industrial RF amplifier applications.
  • Wireless Communication Systems: Suitable for various wireless communication systems requiring high gain and broadband performance.

Q & A

  1. What is the maximum drain-source voltage for the PD54008-E?

    The maximum drain-source voltage (VBRDSS) is 25 V.

  2. What is the operating frequency range of the PD54008-E?

    The PD54008-E operates up to 1 GHz.

  3. What is the typical output power at 500 MHz?

    The typical output power (P1dB) at 500 MHz is 8 W.

  4. What is the power gain at 500 MHz?

    The power gain (GP) at 500 MHz is 15 dB.

  5. What is the drain efficiency at 500 MHz?

    The drain efficiency (ηD) at 500 MHz is 50%.

  6. What type of packaging does the PD54008-E use?

    The PD54008-E uses a leadless plastic package known as PowerFLAT™.

  7. Does the PD54008-E have built-in ESD protection?

    Yes, the PD54008-E has built-in ESD protection.

  8. What is the maximum operating junction temperature for the PD54008-E?

    The maximum operating junction temperature (TJ) is 150°C.

  9. What are some common applications for the PD54008-E?

    Common applications include portable radio systems, commercial and industrial RF amplifiers, and wireless communication systems.

  10. Is the PD54008-E available in tape and reel packaging?

    Yes, the PD54008-E is supplied in tape and reel of 3K units.

Product Attributes

Transistor Type:LDMOS
Frequency:500MHz
Gain:11.5dB
Voltage - Test:7.5 V
Current Rating (Amps):5A
Noise Figure:- 
Current - Test:150 mA
Power - Output:8W
Voltage - Rated:25 V
Package / Case:PowerSO-10 Exposed Bottom Pad
Supplier Device Package:10-PowerSO
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Same Series
PD54008TR-E
PD54008TR-E
TRANS RF PWR N-CH POWERSO-10RF
PD54008S-E
PD54008S-E
FET RF 25V 500MHZ PWRSO-10

Similar Products

Part Number PD54008-E PD55008-E PD54008L-E PD54008S-E PD84008-E PD54003-E
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete Obsolete Active
Transistor Type LDMOS LDMOS LDMOS LDMOS LDMOS LDMOS
Frequency 500MHz 500MHz 500MHz 500MHz 870MHz 500MHz
Gain 11.5dB 17dB 15dB 11.5dB 16.2dB 12dB
Voltage - Test 7.5 V 12.5 V 7.5 V 7.5 V 7.5 V 7.5 V
Current Rating (Amps) 5A 4A 5A 5A 7A 4A
Noise Figure - - - - - -
Current - Test 150 mA 150 mA 200 mA 150 mA 250 mA 50 mA
Power - Output 8W 8W 8W 8W 2W 3W
Voltage - Rated 25 V 40 V 25 V 25 V 25 V 25 V
Package / Case PowerSO-10 Exposed Bottom Pad PowerSO-10 Exposed Bottom Pad 8-PowerVDFN PowerSO-10 Exposed Bottom Pad PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) PowerSO-10 Exposed Bottom Pad
Supplier Device Package 10-PowerSO 10-PowerSO PowerFLAT™ (5x5) PowerSO-10RF (Straight Lead) PowerSO-10RF (Formed Lead) 10-PowerSO

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