PD55008-E
  • Share:

STMicroelectronics PD55008-E

Manufacturer No:
PD55008-E
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
FET RF 40V 500MHZ PWRSO10
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PD55008-E is a high-performance RF power transistor designed by STMicroelectronics. It is a common source N-channel, enhancement-mode lateral field-effect transistor (LDMOS) optimized for high gain and broad band commercial and industrial applications. This device operates at 12 V in common source mode and can handle frequencies up to 1 GHz. It features ST’s latest LDMOS technology, mounted in the PowerSO-10RF plastic package, which is the first ST JEDEC approved, high power SMD package. This package is designed to offer high reliability and excellent RF performance, making it ideal for applications such as car mobile radio.

Key Specifications

ParameterValueUnit
Drain-source voltage (V(BR)DSS)40V
Gate-source voltage (VGS)± 20V
Drain current (ID)4A
Power dissipation (PDISS) @ TC = 70°C52.8W
Max. operating junction temperature (TJ)165°C
Storage temperature (TSTG)-65 to +150°C
Junction-case thermal resistance (RthJC)1.8°C/W
Output power (POUT) @ 500 MHz, 12.5 V8W
Power gain @ 500 MHz, 12.5 V17 dB

Key Features

  • Excellent thermal stability
  • Common source configuration
  • High gain and broad band performance
  • Superior linearity and reliability
  • PowerSO-10RF plastic package for high reliability and ease of assembly
  • Optimized for RF applications

Applications

The PD55008-E is particularly suited for high-performance RF applications, including:

  • Car mobile radio systems
  • Broad band commercial and industrial RF systems
  • High-power RF amplifiers

Q & A

  1. What is the PD55008-E?
    The PD55008-E is a high-performance RF power transistor designed by STMicroelectronics.
  2. What type of transistor is the PD55008-E?
    It is an N-channel, enhancement-mode lateral field-effect transistor (LDMOS).
  3. What is the operating voltage of the PD55008-E?
    The device operates at 12 V in common source mode.
  4. What is the maximum frequency the PD55008-E can handle?
    The device can handle frequencies up to 1 GHz.
  5. What is the output power of the PD55008-E at 500 MHz?
    The output power is 8 W at 500 MHz with a supply voltage of 12.5 V.
  6. What is the power gain of the PD55008-E at 500 MHz?
    The power gain is 17 dB at 500 MHz.
  7. What package type is used for the PD55008-E?
    The device is mounted in the PowerSO-10RF plastic package.
  8. What are the key applications of the PD55008-E?
    The key applications include car mobile radio systems and broad band commercial and industrial RF systems.
  9. What is the maximum operating junction temperature of the PD55008-E?
    The maximum operating junction temperature is 165 °C.
  10. What is the storage temperature range for the PD55008-E?
    The storage temperature range is -65 to +150 °C.

Product Attributes

Transistor Type:LDMOS
Frequency:500MHz
Gain:17dB
Voltage - Test:12.5 V
Current Rating (Amps):4A
Noise Figure:- 
Current - Test:150 mA
Power - Output:8W
Voltage - Rated:40 V
Package / Case:PowerSO-10 Exposed Bottom Pad
Supplier Device Package:10-PowerSO
0 Remaining View Similar

In Stock

$16.45
28

Please send RFQ , we will respond immediately.

Same Series
PD55008-E
PD55008-E
FET RF 40V 500MHZ PWRSO10
PD55008S-E
PD55008S-E
FET RF 40V 500MHZ PWRSO10
PD55008STR-E
PD55008STR-E
FET RF 40V 500MHZ PWRSO-10

Similar Products

Part Number PD55008-E PD55008S-E PD55008L-E PD54008-E PD55003-E
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Active Active
Transistor Type LDMOS LDMOS LDMOS LDMOS LDMOS
Frequency 500MHz 500MHz 500MHz 500MHz 500MHz
Gain 17dB 17dB 19dB 11.5dB 17dB
Voltage - Test 12.5 V 12.5 V 12.5 V 7.5 V 12.5 V
Current Rating (Amps) 4A 4A 5A 5A 2.5A
Noise Figure - - - - -
Current - Test 150 mA 150 mA 150 mA 150 mA 50 mA
Power - Output 8W 8W 8W 8W 3W
Voltage - Rated 40 V 40 V 40 V 25 V 40 V
Package / Case PowerSO-10 Exposed Bottom Pad PowerSO-10 Exposed Bottom Pad 8-PowerVDFN PowerSO-10 Exposed Bottom Pad PowerSO-10 Exposed Bottom Pad
Supplier Device Package 10-PowerSO PowerSO-10RF (Straight Lead) PowerFLAT™ (5x5) 10-PowerSO 10-PowerSO

Related Product By Categories

CGHV96100F2
CGHV96100F2
Wolfspeed, Inc.
RF MOSFET HEMT 40V 440210
BLF6G27LS-75,112
BLF6G27LS-75,112
NXP USA Inc.
RF TRANSISTOR
BLF184XRGJ
BLF184XRGJ
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214C
CLF1G0060-10
CLF1G0060-10
Ampleon USA Inc.
CLF1G0060-10 - 10W BROADBAND RF
BLF8G10LS-160,118
BLF8G10LS-160,118
Ampleon USA Inc.
RF FET LDMOS 65V 19.7DB SOT502B
PD55015TR-E
PD55015TR-E
STMicroelectronics
TRANS RF N-CH FET POWERSO-10RF
NE5550979A-T1-A
NE5550979A-T1-A
Renesas Electronics America Inc
RF N-CHANNEL POWER MOSFET
BLF3G21-6,112
BLF3G21-6,112
Ampleon USA Inc.
RF FET LDMOS 65V 15.5DB SOT538A
BF909,235
BF909,235
NXP USA Inc.
MOSFET N-CH 7V 40MA SOT143
BLF6G27S-45,112
BLF6G27S-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608B
PD57006-E
PD57006-E
STMicroelectronics
FET RF 65V 945MHZ PWRSO-10
NE5550279A-T1-A
NE5550279A-T1-A
CEL
FET RF 30V 900MHZ 79A

Related Product By Brand

SMA6T28CAY
SMA6T28CAY
STMicroelectronics
TVS DIODE 24VWM 44.3VC SMA
SMP100LC-200
SMP100LC-200
STMicroelectronics
THYRISTOR 200V 400A DO214AA
STP80NF03L-04
STP80NF03L-04
STMicroelectronics
MOSFET N-CH 30V 80A TO220AB
STM32F103T6U6A
STM32F103T6U6A
STMicroelectronics
IC MCU 32BIT 32KB FLASH 36VFQFPN
STM32F745VGH6
STM32F745VGH6
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100TFBGA
STM8AF6246TDSSSX
STM8AF6246TDSSSX
STMicroelectronics
IC MCU 8BIT 16KB FLASH 32LQFP
TSZ124IYPT
TSZ124IYPT
STMicroelectronics
IC OPAMP ZER-DRIFT 4CIRC 14TSSOP
M24512-DRDW3TP/K
M24512-DRDW3TP/K
STMicroelectronics
IC EEPROM 512KBIT I2C 8TSSOP
M27C1001-12B1
M27C1001-12B1
STMicroelectronics
IC EPROM 1MBIT PARALLEL 32DIP
LDL1117S33R
LDL1117S33R
STMicroelectronics
IC REG LINEAR 3.3V 1.2A SOT223
TDA7708LTR
TDA7708LTR
STMicroelectronics
ADD INFOTAINMENT
LIS302DL
LIS302DL
STMicroelectronics
ACCEL 2.3-9.2G I2C/SPI 14LGA