BLF647P,112
  • Share:

Ampleon USA Inc. BLF647P,112

Manufacturer No:
BLF647P,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 65V 18DB SOT1121A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF647P,112 is a high-power RF LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor manufactured by Ampleon USA Inc. This device is designed for demanding applications in broadcast transmitters and industrial settings. It is renowned for its excellent ruggedness and broadband performance, making it ideal for digital applications across a wide frequency range.

Key Specifications

ParameterValue
Part NumberBLF647P,112
ManufacturerAmpleon USA Inc.
Frequency Range0 GHz to 1.4 GHz
Output Power200 W
Gain18 dB
Typical Efficiency70%
Supply Voltage32 V
PackageSOT-1121A
ProcessLDMOS
TypeRF Power Discrete Transistors

Key Features

  • High Output Power: The BLF647P,112 offers an output power of 200 W, making it suitable for high-power applications.
  • Broadband Performance: This transistor operates across a wide frequency range from HF to 1500 MHz, ensuring versatility in various applications.
  • High Gain and Efficiency: With a gain of 18 dB and a typical efficiency of 70%, this device is highly efficient and reliable.
  • Ruggedness: The transistor is known for its excellent ruggedness, which is crucial for demanding industrial and broadcast applications.

Applications

  • Broadcast Transmitters: Ideal for use in broadcast transmitters due to its high power handling and broadband performance.
  • Industrial Applications: Suitable for various industrial applications requiring high power and efficiency.
  • Digital Applications: The device's excellent ruggedness and broadband performance make it ideal for digital applications.

Q & A

  1. What is the output power of the BLF647P,112?
    The output power of the BLF647P,112 is 200 W.
  2. What is the frequency range of the BLF647P,112?
    The frequency range of the BLF647P,112 is from 0 GHz to 1.4 GHz.
  3. What is the typical efficiency of the BLF647P,112?
    The typical efficiency of the BLF647P,112 is 70%.
  4. What is the supply voltage for the BLF647P,112?
    The supply voltage for the BLF647P,112 is 32 V.
  5. In what package is the BLF647P,112 available?
    The BLF647P,112 is available in the SOT-1121A package.
  6. What process technology is used in the BLF647P,112?
    The BLF647P,112 uses LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology.
  7. What are the key applications of the BLF647P,112?
    The key applications include broadcast transmitters, industrial applications, and digital applications.
  8. Why is the BLF647P,112 considered rugged?
    The BLF647P,112 is considered rugged due to its excellent performance in demanding environments.
  9. What is the gain of the BLF647P,112?
    The gain of the BLF647P,112 is 18 dB.
  10. Where can I find detailed specifications and datasheets for the BLF647P,112?
    Detailed specifications and datasheets can be found on the official Ampleon website, as well as on distributor websites like RFMW and Octopart.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:1.3GHz
Gain:18dB
Voltage - Test:32 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:100 mA
Power - Output:200W
Voltage - Rated:65 V
Package / Case:SOT-1121A
Supplier Device Package:LDMOST
0 Remaining View Similar

In Stock

$214.26
3

Please send RFQ , we will respond immediately.

Similar Products

Part Number BLF647P,112 BLF647PS,112 BLF647,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Active Active Obsolete
Transistor Type LDMOS (Dual), Common Source LDMOS (Dual), Common Source LDMOS (Dual), Common Source
Frequency 1.3GHz 1.3GHz 600MHz
Gain 18dB 17.5dB 14.5dB
Voltage - Test 32 V 32 V 28 V
Current Rating (Amps) - - 18A
Noise Figure - - -
Current - Test 100 mA 100 mA -
Power - Output 200W 200W 120W
Voltage - Rated 65 V 65 V 65 V
Package / Case SOT-1121A SOT-1121B SOT-540A
Supplier Device Package LDMOST LDMOST LDMOST

Related Product By Categories

CLF1G0035-100P
CLF1G0035-100P
NXP USA Inc.
RF SMALL SIGNAL FIELD-EFFECT TRA
BLF245B
BLF245B
Rochester Electronics, LLC
BLF245B - VHF PUSH-PULL POWER VD
CLF1G0035-50
CLF1G0035-50
Ampleon USA Inc.
CLF1G0035-50 - 50W BROADBAND RF
BLF888DU
BLF888DU
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539A
BF998E6327HTSA1
BF998E6327HTSA1
Infineon Technologies
MOSFET N-CH 12V 200MA SOT-143
A3T18H400W23SR6
A3T18H400W23SR6
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
BF998R,235
BF998R,235
NXP USA Inc.
MOSFET N-CH 12V 30MA SOT143
BLF861A,112
BLF861A,112
Ampleon USA Inc.
RF FET LDMOS 65V 14.5DB SOT540A
NE5550234-AZ
NE5550234-AZ
CEL
FET RF 30V 900MHZ 3MINIMOLD
BLF6G27LS-40PHJ
BLF6G27LS-40PHJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB
A2T07H310-24SR6
A2T07H310-24SR6
NXP USA Inc.
FET RF 2CH 70V 880MHZ
A2T21H410-24SR6
A2T21H410-24SR6
NXP USA Inc.
IC TRANS RF LDMOS

Related Product By Brand

MX0912B351Y,114
MX0912B351Y,114
Ampleon USA Inc.
RF TRANS NPN 20V 1.215GHZ CDFM2
BLF888EU
BLF888EU
Ampleon USA Inc.
RF FET LDMOS 104V 17DB SOT539A
BLF888DU
BLF888DU
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539A
BLF8G22LS-140U
BLF8G22LS-140U
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
CLF1G0060-10U
CLF1G0060-10U
Ampleon USA Inc.
RF FET HEMT 150V 14.5DB SOT1227A
BLF574XRS,112
BLF574XRS,112
Ampleon USA Inc.
RF FET LDMOS 110V 23DB SOT1214B
BLF6G10-45,112
BLF6G10-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 22.5DB SOT608A
BLF6G27S-45,118
BLF6G27S-45,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608B
BLF647,112
BLF647,112
Ampleon USA Inc.
RF FET LDMOS 65V 14.5DB SOT540A
BLF278,112
BLF278,112
Ampleon USA Inc.
RF FET 2 NC 125V 22DB SOT262A1
BLF6G27LS-40PHJ
BLF6G27LS-40PHJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB
BLF7G24LS-140
BLF7G24LS-140
Ampleon USA Inc.
RF FET LDMOS 140W SOT502B