BLF647P,112
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Ampleon USA Inc. BLF647P,112

Manufacturer No:
BLF647P,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 65V 18DB SOT1121A
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The BLF647P,112 is a high-power RF LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor manufactured by Ampleon USA Inc. This device is designed for demanding applications in broadcast transmitters and industrial settings. It is renowned for its excellent ruggedness and broadband performance, making it ideal for digital applications across a wide frequency range.

Key Specifications

ParameterValue
Part NumberBLF647P,112
ManufacturerAmpleon USA Inc.
Frequency Range0 GHz to 1.4 GHz
Output Power200 W
Gain18 dB
Typical Efficiency70%
Supply Voltage32 V
PackageSOT-1121A
ProcessLDMOS
TypeRF Power Discrete Transistors

Key Features

  • High Output Power: The BLF647P,112 offers an output power of 200 W, making it suitable for high-power applications.
  • Broadband Performance: This transistor operates across a wide frequency range from HF to 1500 MHz, ensuring versatility in various applications.
  • High Gain and Efficiency: With a gain of 18 dB and a typical efficiency of 70%, this device is highly efficient and reliable.
  • Ruggedness: The transistor is known for its excellent ruggedness, which is crucial for demanding industrial and broadcast applications.

Applications

  • Broadcast Transmitters: Ideal for use in broadcast transmitters due to its high power handling and broadband performance.
  • Industrial Applications: Suitable for various industrial applications requiring high power and efficiency.
  • Digital Applications: The device's excellent ruggedness and broadband performance make it ideal for digital applications.

Q & A

  1. What is the output power of the BLF647P,112?
    The output power of the BLF647P,112 is 200 W.
  2. What is the frequency range of the BLF647P,112?
    The frequency range of the BLF647P,112 is from 0 GHz to 1.4 GHz.
  3. What is the typical efficiency of the BLF647P,112?
    The typical efficiency of the BLF647P,112 is 70%.
  4. What is the supply voltage for the BLF647P,112?
    The supply voltage for the BLF647P,112 is 32 V.
  5. In what package is the BLF647P,112 available?
    The BLF647P,112 is available in the SOT-1121A package.
  6. What process technology is used in the BLF647P,112?
    The BLF647P,112 uses LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology.
  7. What are the key applications of the BLF647P,112?
    The key applications include broadcast transmitters, industrial applications, and digital applications.
  8. Why is the BLF647P,112 considered rugged?
    The BLF647P,112 is considered rugged due to its excellent performance in demanding environments.
  9. What is the gain of the BLF647P,112?
    The gain of the BLF647P,112 is 18 dB.
  10. Where can I find detailed specifications and datasheets for the BLF647P,112?
    Detailed specifications and datasheets can be found on the official Ampleon website, as well as on distributor websites like RFMW and Octopart.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:1.3GHz
Gain:18dB
Voltage - Test:32 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:100 mA
Power - Output:200W
Voltage - Rated:65 V
Package / Case:SOT-1121A
Supplier Device Package:LDMOST
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Similar Products

Part Number BLF647P,112 BLF647PS,112 BLF647,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Active Active Obsolete
Transistor Type LDMOS (Dual), Common Source LDMOS (Dual), Common Source LDMOS (Dual), Common Source
Frequency 1.3GHz 1.3GHz 600MHz
Gain 18dB 17.5dB 14.5dB
Voltage - Test 32 V 32 V 28 V
Current Rating (Amps) - - 18A
Noise Figure - - -
Current - Test 100 mA 100 mA -
Power - Output 200W 200W 120W
Voltage - Rated 65 V 65 V 65 V
Package / Case SOT-1121A SOT-1121B SOT-540A
Supplier Device Package LDMOST LDMOST LDMOST

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