BLF3G21-6,135
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Ampleon USA Inc. BLF3G21-6,135

Manufacturer No:
BLF3G21-6,135
Manufacturer:
Ampleon USA Inc.
Package:
Tape & Reel (TR)
Description:
RF FET LDMOS 65V 15.5DB SOT538A
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The BLF3G21-6,135 is a high-performance RF LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor manufactured by Ampleon USA Inc. This device is designed for use in various RF power amplifier applications, particularly in the frequency range from HF to 2200 MHz. It is known for its excellent back-off linearity, easy power control, and high power gain, making it suitable for a wide range of wireless communication systems.

Key Specifications

ParameterConditionsMinTyp/NomMaxUnit
Frequency Range-1800-2200MHz
Nominal Output Power at 1 dB Gain Compression (P L(1dB))--6-W
Power Gain (G p)V DS = 26 V1415.5-dB
Input Return Loss (RL in)V DS = 26 V; I Dq = 90 mA-7-3-dB
Drain Efficiency (η D)V DS = 26 V; f = 2000 MHz; I Dq = 90 mA3539-%
Peak Envelope Power (P L(PEP))--6-W
Third-Order Intermodulation Distortion (IMD3)P L(PEP) < 2 W; V DS = 26 V; I Dq = 90 mA-50-32-29dBc
Voltage - Rated--65-V
Current Rating--2.3-A
Package / Case--SOT-538A--

Key Features

  • Excellent back-off linearity and easy power control, making it ideal for high-efficiency RF power amplifiers.
  • High power gain of up to 15.5 dB, ensuring robust signal amplification.
  • Excellent ruggedness and thermal stability, enhancing reliability in demanding environments.
  • Designed for broadband operation from HF to 2200 MHz, with no internal matching required.
  • ESD protection to safeguard against electrostatic discharge.

Applications

  • RF power amplifiers for GSM, PHS, EDGE, CDMA, and W-CDMA base stations.
  • Multicarrier applications in the HF to 2200 MHz frequency range.
  • Broadcast drivers.

Q & A

  1. What is the BLF3G21-6,135 used for?
    The BLF3G21-6,135 is used in RF power amplifier applications, particularly in wireless communication systems such as base stations and broadcast drivers.
  2. What is the frequency range of the BLF3G21-6,135?
    The frequency range is from HF to 2200 MHz.
  3. What is the nominal output power at 1 dB gain compression?
    The nominal output power at 1 dB gain compression is 6 W.
  4. What is the power gain of the BLF3G21-6,135?
    The power gain is up to 15.5 dB.
  5. What is the rated voltage of the BLF3G21-6,135?
    The rated voltage is 65 V.
  6. What is the current rating of the BLF3G21-6,135?
    The current rating is 2.3 A.
  7. What package type does the BLF3G21-6,135 use?
    The package type is SOT-538A.
  8. Does the BLF3G21-6,135 have ESD protection?
    Yes, it has ESD protection.
  9. What are some common applications of the BLF3G21-6,135?
    Common applications include RF power amplifiers for base stations and broadcast drivers.
  10. Is the BLF3G21-6,135 still in production?
    No, the BLF3G21-6,135 has been discontinued.

Product Attributes

Transistor Type:LDMOS
Frequency:2GHz
Gain:15.5dB
Voltage - Test:26 V
Current Rating (Amps):2.3A
Noise Figure:- 
Current - Test:90 mA
Power - Output:6W
Voltage - Rated:65 V
Package / Case:SOT-538A
Supplier Device Package:2-CSMD
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BLF3G21-6,135
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RF FET LDMOS 65V 15.5DB SOT538A

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