Overview
The 2SK3557-6-TB-E is an N-Channel Junction Field-Effect Transistor (JFET) produced by onsemi. This device is designed for high-frequency applications and is known for its ultralow noise figure and high forward transfer admittance. The 2SK3557-6-TB-E is packaged in a compact CP (SC-59, TO-236, SOT-23, TO-236AB) package, making it ideal for space-constrained designs. It is classified into different ranks based on its drain current (IDSS), with the 2SK3557-6-TB-E specifically having an IDSS range of 10 to 20 mA.
Key Specifications
| Parameter | Symbol | Conditions | Min | Max | Unit | |
|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSX | - | - | - | 15 | V |
| Gate-to-Drain Voltage | VGDS | - | - | - | -15 | V |
| Gate Current | IG | - | - | - | 10 | mA |
| Drain Current | ID | - | - | - | 50 | mA |
| Allowable Power Dissipation | PD | - | - | - | 200 | mW |
| Junction Temperature | Tj | - | - | - | 150 | °C |
| Storage Temperature | Tstg | - | -55 | - | 150 | °C |
| Gate-to-Drain Breakdown Voltage | V(BR)GDS | IG = -10 μA, VDS = 0 V | - | - | -15 | V |
| Gate Cutoff Current | IGSS | VGS = -10 V, VDS = 0 V | - | - | -1.0 | nA |
| Cutoff Voltage | VGS(off) | VDS = 5 V, ID = 100 μA | -0.3 | -0.7 | -1.5 | V |
| Drain Current | IDSS | VDS = 5 V, VGS = 0 V | 10 | - | 20 | mA |
| Forward Transfer Admittance | |yfs| | VDS = 5 V, VGS = 0 V, f = 1 kHz | 24 | 35 | - | mS |
| Input Capacitance | Ciss | VDS = 5 V, VGS = 0 V, f = 1 MHz | - | - | 10.0 | pF |
| Reverse Transfer Capacitance | Crss | VDS = 5 V, VGS = 0 V, f = 1 MHz | - | - | 2.9 | pF |
| Noise Figure | NF | VDS = 5 V, Rg = 1 kΩ, ID = 1 mA, f = 1 kHz | - | - | 1.0 | dB |
Key Features
- Large Forward Transfer Admittance: The 2SK3557-6-TB-E has a high forward transfer admittance (|yfs|) of 24 to 35 mS, making it suitable for high-frequency applications.
- Small Input Capacitance: It features a small input capacitance (Ciss) of up to 10.0 pF, which is beneficial for reducing parasitic capacitance in circuits.
- Ultrasmall-sized Package: The device is packaged in a compact CP (SC-59, TO-236, SOT-23, TO-236AB) package, allowing for smaller and slimmer set designs.
- Ultralow Noise Figure: The 2SK3557-6-TB-E has an ultralow noise figure of 1.0 dB, making it ideal for low noise amplifier applications.
- Pb-Free: The device is lead-free, complying with environmental regulations and ensuring safety in use.
Applications
- AM Tuner RF Amplification: The 2SK3557-6-TB-E is suitable for use in AM tuner RF amplification due to its high frequency and low noise characteristics.
- Low Noise Amplifier: Its ultralow noise figure makes it an excellent choice for low noise amplifier applications in various electronic systems.
Q & A
- What is the maximum drain-to-source voltage for the 2SK3557-6-TB-E?
The maximum drain-to-source voltage (VDSX) is 15 V.
- What is the typical forward transfer admittance of the 2SK3557-6-TB-E?
The typical forward transfer admittance (|yfs|) is 35 mS.
- What is the noise figure of the 2SK3557-6-TB-E?
The noise figure (NF) is 1.0 dB.
- What are the package types available for the 2SK3557-6-TB-E?
The device is available in CP (SC-59, TO-236, SOT-23, TO-236AB) packages.
- What is the minimum packing quantity for the 2SK3557-6-TB-E?
The minimum packing quantity is 3,000 pieces per reel.
- What is the junction temperature limit for the 2SK3557-6-TB-E?
The junction temperature (Tj) limit is 150°C.
- Is the 2SK3557-6-TB-E lead-free?
Yes, the device is lead-free (Pb-Free).
- What are the typical applications of the 2SK3557-6-TB-E?
The device is typically used in AM tuner RF amplification and low noise amplifier applications.
- What is the input capacitance of the 2SK3557-6-TB-E?
The input capacitance (Ciss) is up to 10.0 pF.
- What is the reverse transfer capacitance of the 2SK3557-6-TB-E?
The reverse transfer capacitance (Crss) is up to 2.9 pF.
