Overview
The BLF6G27-45,112 is a high-performance LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed and manufactured by Ampleon USA Inc. This transistor is specifically tailored for RF power amplifier applications in the frequency range of 2500 MHz to 2700 MHz, making it suitable for base station and WiMAX applications. Despite being discontinued, it remains a significant component in the realm of RF power electronics due to its robust features and performance characteristics.
Key Specifications
| Symbol | Parameter | Conditions | Min | Max | Unit | |
|---|---|---|---|---|---|---|
| f range | frequency range | 2500 | 2700 | MHz | ||
| P L(3dB) | nominal output power at 3 dB gain compression | 45 | W | |||
| G p | power gain | P L(AV) = 7 W; V DS = 28 V | 16.5 | 18 | dB | |
| RL in | input return loss | P L(AV) = 7 W; V DS = 28 V; I Dq = 350 mA | -10 | -5 | dB | |
| η D | drain efficiency | P L(AV) = 7 W; V DS = 28 V; 2500 MHz < f < 2700 MHz; I Dq = 350 mA | 22 | 24 | % | |
| P L(AV) | average output power | 7 | W | |||
| ACPR 885k | adjacent channel power ratio (885 kHz) | P L(AV) = 7 W; V DS = 28 V; 2500 MHz < f < 2700 MHz; I Dq = 350 mA | -49 | -46 | dBc | |
| ACPR 1980k | adjacent channel power ratio (1980 kHz) | P L(AV) = 7 W; V DS = 28 V; 2500 MHz < f < 2700 MHz; I Dq = 350 mA | -64 | -61 | dBc | |
| V DS | maximum drain-source voltage | 32 | V | |||
| I Dq | maximum continuous drain current | 3.1 | A |
Key Features
- Excellent Ruggedness: The BLF6G27-45,112 is designed to withstand harsh operating conditions, ensuring reliability in demanding environments.
- Internally Matched: This feature simplifies the design and implementation process by eliminating the need for external matching components.
- Excellent Thermal Stability: The transistor maintains stable performance across a range of temperatures, which is crucial for consistent operation in base station applications.
- Integrated ESD Protection: Built-in ESD protection enhances the component's durability against electrostatic discharge.
- High Efficiency: The transistor offers high drain efficiency, which is essential for minimizing power consumption and heat generation in RF power amplifiers.
- Broadband Operation: Designed to operate efficiently across the 2500 MHz to 2700 MHz frequency range, making it versatile for various RF applications.
- Low Gold Plating Thickness on Leads: This feature reduces material costs and environmental impact while maintaining reliable connections.
- Compliance with RoHS Directive: The component is compliant with Directive 2002/95/EC, ensuring it meets environmental standards regarding the restriction of hazardous substances.
Applications
- RF Power Amplifiers for Base Stations: The BLF6G27-45,112 is optimized for use in base station applications, providing high power output and efficiency.
- Multi-Carrier Applications: It is suitable for multi-carrier operations within the 2500 MHz to 2700 MHz frequency range, making it a versatile choice for various wireless communication systems.
Q & A
- What is the frequency range of the BLF6G27-45,112 transistor?
The BLF6G27-45,112 operates in the frequency range of 2500 MHz to 2700 MHz.
- What is the nominal output power at 3 dB gain compression for this transistor?
The nominal output power at 3 dB gain compression is 45 W.
- What are the key features of the BLF6G27-45,112 transistor?
Key features include excellent ruggedness, internal matching, excellent thermal stability, integrated ESD protection, high efficiency, and compliance with RoHS Directive.
- What are the typical applications of the BLF6G27-45,112 transistor?
Typical applications include RF power amplifiers for base stations and multi-carrier operations within the specified frequency range.
- What is the maximum drain-source voltage for this transistor?
The maximum drain-source voltage is 32 V.
- What is the maximum continuous drain current for this transistor?
The maximum continuous drain current is 3.1 A.
- Is the BLF6G27-45,112 transistor still in production?
No, the BLF6G27-45,112 has been discontinued.
- What package type does the BLF6G27-45,112 come in?
The transistor comes in a CDFM2 (SOT608A) package.
- What is the typical power gain of the BLF6G27-45,112 transistor?
The typical power gain is 18 dB.
- What is the typical drain efficiency of the BLF6G27-45,112 transistor?
The typical drain efficiency is 24%.
