BLF888B,112
  • Share:

Ampleon USA Inc. BLF888B,112

Manufacturer No:
BLF888B,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 104V 21DB SOT539A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF888B,112 is a high-performance RF power transistor manufactured by Ampleon USA Inc. This LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor is designed for UHF broadcast applications, particularly optimized for DVB-T (Digital Video Broadcasting - Terrestrial) broadcast systems. It is known for its high power and efficiency, making it an ideal choice for Doherty amplifier solutions.

Key Specifications

ParameterValue
Frequency Range0.47 to 0.86 GHz
Power Output650 W
Gain20 dB
Voltage50 V
TechnologyLDMOS
Package TypeSOT-539A

Key Features

  • High power output of 650 W, making it suitable for high-power broadcast applications.
  • Operates within the frequency range of 0.47 to 0.86 GHz, ideal for UHF broadcast.
  • High gain of 20 dB, enhancing signal strength and quality.
  • Operates at a voltage of 50 V, ensuring efficient power management.
  • LDMOS technology for high efficiency and reliability.
  • Compact SOT-539A package, facilitating easy integration into various systems.

Applications

The BLF888B,112 is primarily used in UHF broadcast applications, including DVB-T broadcast systems. It is optimized for use in Doherty amplifier solutions, which are known for their high efficiency and power handling capabilities. This transistor is also suitable for other high-power RF applications requiring high efficiency and reliability.

Q & A

  1. What is the frequency range of the BLF888B,112?
    The BLF888B,112 operates within the frequency range of 0.47 to 0.86 GHz.
  2. What is the power output of the BLF888B,112?
    The power output of the BLF888B,112 is 650 W.
  3. What is the gain of the BLF888B,112?
    The gain of the BLF888B,112 is 20 dB.
  4. What is the operating voltage of the BLF888B,112?
    The operating voltage of the BLF888B,112 is 50 V.
  5. What technology is used in the BLF888B,112?
    The BLF888B,112 uses LDMOS technology.
  6. What is the package type of the BLF888B,112?
    The package type of the BLF888B,112 is SOT-539A.
  7. What are the primary applications of the BLF888B,112?
    The primary applications of the BLF888B,112 include UHF broadcast and DVB-T broadcast systems.
  8. Is the BLF888B,112 suitable for Doherty amplifier solutions?
    Yes, the BLF888B,112 is optimized for use in Doherty amplifier solutions.
  9. Where can I find detailed specifications for the BLF888B,112?
    Detailed specifications can be found on the official Ampleon website, as well as on distributor websites such as Digi-Key and RFMW.
  10. What are the key benefits of using LDMOS technology in the BLF888B,112?
    LDMOS technology provides high efficiency, reliability, and power handling capabilities.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:860MHz
Gain:21dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:1.3 A
Power - Output:250W
Voltage - Rated:104 V
Package / Case:SOT-539A
Supplier Device Package:SOT539A
0 Remaining View Similar

In Stock

$245.86
3

Please send RFQ , we will respond immediately.

Same Series
BLF888B,112
BLF888B,112
RF FET LDMOS 104V 21DB SOT539A

Similar Products

Part Number BLF888B,112 BLF888BS,112 BLF888,112 BLF888A,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Not For New Designs Not For New Designs Obsolete Not For New Designs
Transistor Type LDMOS (Dual), Common Source LDMOS (Dual), Common Source LDMOS (Dual), Common Source LDMOS (Dual), Common Source
Frequency 860MHz 470MHz ~ 860MHz 860MHz 860MHz
Gain 21dB 21dB 19dB 21dB
Voltage - Test 50 V 50 V 50 V 50 V
Current Rating (Amps) - 2.8µA - -
Noise Figure - - - -
Current - Test 1.3 A - 1.3 A 1.3 A
Power - Output 250W 250W 250W 600W
Voltage - Rated 104 V 104 V 104 V 110 V
Package / Case SOT-539A SOT539B SOT-979A SOT-539A
Supplier Device Package SOT539A SOT539B CDFM2 SOT539A

Related Product By Categories

BLF6G10LS-200RN:11
BLF6G10LS-200RN:11
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT502B
CLF1G0035-50
CLF1G0035-50
Ampleon USA Inc.
CLF1G0035-50 - 50W BROADBAND RF
MRFE6VP5150NR1
MRFE6VP5150NR1
NXP USA Inc.
RF MOSFET LDMOS DL 50V TO270
BLF8G20LS-220J
BLF8G20LS-220J
Ampleon USA Inc.
RF FET LDMOS 65V 18.9DB SOT502B
SD3931-10
SD3931-10
STMicroelectronics
IC RF PWR TRANS HF/VHF/UHF M174
BLF178XRS,112
BLF178XRS,112
Ampleon USA Inc.
RF FET LDMOS 110V 28DB SOT539B
BF908,215
BF908,215
NXP USA Inc.
MOSFET N-CH 12V 40MA SOT143B
BF545A,215
BF545A,215
NXP USA Inc.
JFET N-CH 30V 6.5MA SOT23
BLF888,112
BLF888,112
Ampleon USA Inc.
RF FET LDMOS 104V 19DB SOT979A
PD84001
PD84001
STMicroelectronics
FET RF 18V 870MHZ
BF512,215
BF512,215
NXP USA Inc.
JFET N-CH 20V 30MA SOT23
NE5550234-T1-AZ
NE5550234-T1-AZ
CEL
FET RF 30V 900MHZ 3MINIMOLD

Related Product By Brand

MX0912B351Y
MX0912B351Y
Ampleon USA Inc.
RF POWER BIPOLAR TRANSISTOR, 1-E
BLF184XRU
BLF184XRU
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214A
BLL6H0514-25,112
BLL6H0514-25,112
Ampleon USA Inc.
RF FET LDMOS 100V 21DB SOT467C
BLF7G20LS-200,118
BLF7G20LS-200,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLF8G09LS-270GWJ
BLF8G09LS-270GWJ
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT1244C
BLF647PSJ
BLF647PSJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
BLF888AS,112
BLF888AS,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539B
BLF888ESU
BLF888ESU
Ampleon USA Inc.
RF FET LDMOS 104V 17DB SOT539B
BLF578XRS,112
BLF578XRS,112
Ampleon USA Inc.
RF FET LDMOS 110V 23.5DB SOT539B
BLF245B,112
BLF245B,112
Ampleon USA Inc.
RF FET 2 NC 65V 18DB SOT279A
BLF6G27-10GHJ
BLF6G27-10GHJ
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C
BLM6G22-30G,135
BLM6G22-30G,135
Ampleon USA Inc.
IC AMP W-CDMA 2.11-2.17GHZ 16HSO